Patent US4758535A successfully refreshed from Google Patents.
US4758535A
Expired / Lapsed
US
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Method for producing semiconductor laser
Assignee: Mitsubishi Electric Corp
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Filing: 1987-03-16
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Granted: 1988-07-19
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Expires: 2007-03-16
Abstract
Abstract A method for producing a semiconductor laser of InGaAsP/InP type having a structure, in which an active layer isolated from outside is embedded in a groove in a substrate wafer, which comprises steps of: forming the groove in the substrate having a crystallographic plane of (100), on the upper surface of which a current blocking layer has been formed, along the <011> direction of the substrate, in a manner to be terminated at both sides of substrate wafer in the vicinity of the end faces of a laser resonator; and, thereafter, sequentially forming on the groove and other regions of the substrate clad layers and the active layer.
Inventors
- 👤 Yasushi Sakakibara
- 👤 Yasuo Nakajima
- 👤 Hirofumi Namizaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:57
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/16; H01S5/20; H01S5/24; H01S5/22; H01S5/223; H01S5/2237
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
138 words
A method for producing a semiconductor laser of the InGaAsP/InP type having a structure in which an active layer, isolated form outside, is embedded in a groove in a substrate wafer, said method comprising the steps of: forming a current blocking layer on the upper surface of said substrate wafer wherein said substrate has a crystallographic plane of (100); forming said groove in said substrate along the {011} direction of the substrate, wherein said groove extends form substantially one side of said substrate to substantially another side of said substrate in such a manner that said groove terminates before both end faces of a laser resonator wherein each of said sides correspond to the end faces of a laser resonator; and sequentially forming, on said groove and the remainder of said substrate, clad layers and said active layer.
Claim 2
Independent Claim
138 words
A method for producing a semiconductor laser of the InGaAsP/InP type having a structure in which an active layer, isolated form outside, is embedded in a groove in a substrate wafer, said method comprising the steps of: forming a current blocking layer on the upper surface of said substrate wafer wherein said substrate has a crystallographic plane of (100); forming said groove in said substrate along the {011} direction of the substrate, wherein said groove extends form substantially one side of said substrate to substantially another side of said substrate in such a manner that said groove terminates before both end faces of a laser resonator wherein each of said sides correspond to the end faces of a laser resonator; and sequentially forming, on said groove and the remainder of said substrate, clad layers and said active layer.
Claim 3
Dependent Claim
29 words
A method for producing a semiconductor laser according to claim 1, wherein use is made of a p-type InP substrate as the substrate having the crystallographic plane of (100).
Claim 4
Dependent Claim
34 words
A method for producing a semiconductor laser according to claim 1, wherein, as the current blocking layer, use is made of an n-type InP current blocking layer and a p-type InP current blocking layer.
Claim 5
Dependent Claim
25 words
A method for producing a semiconductor laser according to claim 1, wherein, as the current blocking layer, use is made of an InP semi-insulating layer.
Claim 6
Dependent Claim
23 words
A method for producing a semiconductor laser according to claim 1, wherein said groove has a shape of an arrowhead in its cross-section.
Claim 7
Dependent Claim
24 words
A method for producing a semiconductor laser according to claim 1, wherein said groove has a shape of a letter "V" in its cross-section.
Claim 8
Dependent Claim
21 words
A method for producing a semiconductor laser according to claim 1, wherein said groove has a width of approximately 1-2 microns.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-19 | 1992-01-18 | 1992-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-19 | 1996-01-18 | 1996-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-19 | 2000-01-18 | 2000-07-19 | $7700.00 | Window Closed / Lapsed |