Semiconductor lasers

Claim 2

In a semiconductor laser having a resonant cavity, the combination comprising; an n-type InP substrate; a p-type InP current blocking layer having a carrier concentration in the range 1.2×10 13 to about 10 15 cm -3 , said p-type InP layer having a stripe-shaped groove cut therein and penetrating into said substrate; an n-type InP clad layer disposed in the bottom of said groove in contact with said substrate; an InGaAsP active layer formed on said n-type InP clad layer and disposed within said groove; a p-type InP clad layer formed over said InGaAsP active layer to at least partially fill said groove; and first and second electrodes affixed to said n-type InP substrate and said p-type InP clad layer respectively, a voltage for operating said laser being applied across said first and second electrodes.

Claim 3

A semiconductor laser according to claim 1, wherein said current blocking layer is a cadmium-doped liquid-phase epitaxial growth layer.

Claim 4

A semiconductor laser according to claim 2, wherein the p-type conductivity of said InP current blocking layer is obtained by converting n-type InP to p-type InP by compensating said n-type InP with a cadmium dopant, said conversion from n-type to p-type occurring just after the amount of said cadmium dopant is increased above a predetermined amount.

Claim 5

A semiconductor laser according to claim 3, wherein the predetermined amount of cadmium dopant at which said InP current blocking layer is converted from n-type to p-type is about 1.6×10 -2 atm%.

Claim 6

A semiconductor laser according to claim 3, wherein the resistivity of said current blocking layer is sufficiently high to block leakage currents which would otherwise flow therethrough and bypass said InGaAsP active layer.

Claim 7

In a semiconductor laser having a resonant cavity, the combination comprising: an n-type InP substrate; a p-type InP current blocking layer having a stripe-shaped groove cut therein and penetrating into said substrate, said InP current blocking layer being a liquid-phase epitaxial growth layer doped with cadmium and having a carrier concentration in the range 1.2×10 13 to about 10 15 cm -3 , the p-type conductivity of said InP current blocking layer being obtained by converting n-type InP to p-type InP by compensating said n-type InP with said cadmium dopant, said conversion from n-type to p-type occurring just after the amount of cadmium dopant is increased above a predetermined amount; an n-type InP clad layer disposed in the bottom of said groove in contact with said substrate; an InGaAsP active layer formed on said n-type InP clad layer and disposed within the groove; a p-type InP clad layer formed over said InGaAsP active layer to at least partially fill said groove; and first and second electrodes affixed to said n-type InP substrate and said p-type InP clad layer respectively, a voltage for operating said laser being applied across said first and second electrodes.

Claim 8

In a semiconductor laser having a resonant cavity, the combination comprising: an n-type InP substrate; a p-type InP current blocking layer having a stripe-shaped groove cut therein and penetrating into said substrate, said InP current blocking layer being a liquid-phase epitaxial growth layer doped with cadmium and having a carrier concentration in the range 1.2×10 13 to about 10 15 cm -3 , the p-type conductivity of said InP current blocking layer being obtained by converting n-type InP to p-type InP by compensating said n-type InP with said cadmium dopant, said conversion from n-type to p-type occurring just after the amount of cadmium dopant is increased above a predetermined amount; an n-type InP clad layer disposed in the bottom of said groove in contact with said substrate; an InGaAsP active layer formed on said n-type InP clad layer and disposed within the groove; a p-type InP clad layer formed over said InGaAsP active layer to at least partially fill said groove; and first and second electrodes affixed to said n-type InP substrate and said p-type InP clad layer respectively, a voltage for operating said laser being applied across said first and second electrodes.

Claim 9

In a semiconductor laser having a resonant cavity, the combination comprising: an n-type InP substrate; a cadmium-doped p-type InP current blocking layer having a stripe-shaped groove cut therein and penetrating into said substrate, said current blocking layer being a cadmium-doped liquid-phase epitaxial growth layer having a carrier concentration in the range shown in FIG. 4 for causing p-type conductivity thereof; an n-type InP clad layer disposed in the bottom of said groove in contact with said substrate; an InGaAsP active layer formed on said n-type InP clad layer and disposed within said groove; a p-type InP clad layer formed over said InGaAsP active layer to at least partially fill said groove; and first and second electrodes affixed to said n-type InP substrate and said p-type InP clad layer respectively, a voltage for operating said laser being applied across said first and second electrodes.

Claim 10

In a semiconductor laser having a resonant cavity, the combination comprising: an n-type InP substrate; a cadmium-doped p-type InP current blocking layer having a stripe-shaped groove cut therein and penetrating into said substrate, said current blocking layer being a cadmium-doped liquid-phase epitaxial growth layer having a carrier concentration in the range shown in FIG. 4 for causing p-type conductivity thereof; an n-type InP clad layer disposed in the bottom of said groove in contact with said substrate; an InGaAsP active layer formed on said n-type InP clad layer and disposed within said groove; a p-type InP clad layer formed over said InGaAsP active layer to at least partially fill said groove; and first and second electrodes affixed to said n-type InP substrate and said p-type InP clad layer respectively, a voltage for operating said laser being applied across said first and second electrodes.

Claim 11

A semiconductor laser according to claim 7, wherein said InP current blocking layer is doped with 1.6×10 -2 atm% to 2.0×10 -2 atm% of cadmium.