Semiconductor light emitting device

Abstract

Abstract PURPOSE:To improve the light emitting efficiency of a light emitting device of double hetero structure formed of semiconductor of InGaAsP/InP series by composing the conductive type of regions between which an active layer is interposed of an N type region which contains high density of Se, thereby enhancing the current limiting effect. CONSTITUTION:A P type lower clad layer 12 and an N type InP layer 13' formed of the lower layer of a current limiting layer are laminated and grown on a P type InP substrate 11, and opened with a V-shaped groove 32 for forming a light emitting unit which is intruded into the layer 12 while moving along the optical axis in (110) direction by etching. Then, a P type InP layer 14 to become a current limiting layer is accumulated on the overall surface including the groove, a lower clad layer 14' is produced in the groove 21, an undoped InGaAsP layer 15 is covered on the overall surface, and a delta-shaped active layer 15' having a thick center is formed on the layer 14'. In this structure, Se of approx. 1X10<20>/cm<2> is contained in advance in the layer 13', and the layer 15' is enclosed by an N type InP layer 13 which contains high density of Se.

Inventors

• 👤 Satoshi Furumiya
• 👤 古宮　聰

Bibliographic Details