US4758535A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing semiconductor laser
Assignee: Mitsubishi Electric Corp
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Filing: 1987-03-16
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Granted: 1988-07-19
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Expires: 2007-03-16
Abstract
Abstract A method for producing a semiconductor laser of InGaAsP/InP type having a structure, in which an active layer isolated from outside is embedded in a groove in a substrate wafer, which comprises steps of: forming the groove in the substrate having a crystallographic plane of (100), on the upper surface of which a current blocking layer has been formed, along the <011> direction of the substrate, in a manner to be terminated at both sides of substrate wafer in the vicinity of the end faces of a laser resonator; and, thereafter, sequentially forming on the groove and other regions of the substrate clad layers and the active layer.
Inventors
- 👤 Yasushi Sakakibara
- 👤 Yasuo Nakajima
- 👤 Hirofumi Namizaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 02:32
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/16; H01S5/20; H01S5/24; H01S5/22; H01S5/223; H01S5/2237
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
138 words
A method for producing a semiconductor laser of the InGaAsP/InP type having a structure in which an active layer, isolated form outside, is embedded in a groove in a substrate wafer, said method comprising the steps of: forming a current blocking layer on the upper surface of said substrate wafer wherein said substrate has a crystallographic plane of (100); forming said groove in said substrate along the {011} direction of the substrate, wherein said groove extends form substantially one side of said substrate to substantially another side of said substrate in such a manner that said groove terminates before both end faces of a laser resonator wherein each of said sides correspond to the end faces of a laser resonator; and sequentially forming, on said groove and the remainder of said substrate, clad layers and said active layer.
Claim 2
Independent Claim
138 words
A method for producing a semiconductor laser of the InGaAsP/InP type having a structure in which an active layer, isolated form outside, is embedded in a groove in a substrate wafer, said method comprising the steps of: forming a current blocking layer on the upper surface of said substrate wafer wherein said substrate has a crystallographic plane of (100); forming said groove in said substrate along the {011} direction of the substrate, wherein said groove extends form substantially one side of said substrate to substantially another side of said substrate in such a manner that said groove terminates before both end faces of a laser resonator wherein each of said sides correspond to the end faces of a laser resonator; and sequentially forming, on said groove and the remainder of said substrate, clad layers and said active layer.
Claim 3
Dependent Claim
29 words
A method for producing a semiconductor laser according to claim 1, wherein use is made of a p-type InP substrate as the substrate having the crystallographic plane of (100).
Claim 4
Dependent Claim
34 words
A method for producing a semiconductor laser according to claim 1, wherein, as the current blocking layer, use is made of an n-type InP current blocking layer and a p-type InP current blocking layer.
Claim 5
Dependent Claim
25 words
A method for producing a semiconductor laser according to claim 1, wherein, as the current blocking layer, use is made of an InP semi-insulating layer.
Claim 6
Dependent Claim
23 words
A method for producing a semiconductor laser according to claim 1, wherein said groove has a shape of an arrowhead in its cross-section.
Claim 7
Dependent Claim
24 words
A method for producing a semiconductor laser according to claim 1, wherein said groove has a shape of a letter "V" in its cross-section.
Claim 8
Dependent Claim
21 words
A method for producing a semiconductor laser according to claim 1, wherein said groove has a width of approximately 1-2 microns.
References Cited (Backward Citations)
US4002997A
Cited
US4282494A
Cited
JPS55123189A
Cited
US4285763A
Cited
US4675710A
Cited
US4354898A
Cited
US4496403A
Cited
JPS58128783A
Cited
JPS58178582A
Cited
JPS58207690A
Cited
US4546481A
Cited
JPS58220486A
Cited
JPS59112673A
Cited
JPS59175783A
Cited
US4644552A
Cited
US4439268A
Cited
US4661960A
Cited
JPS60128691A
Cited
US4573255A
Cited
JPS60235484A
Cited
US4595454A
Cited
US4660208A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-19 | 1992-01-18 | 1992-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-19 | 1996-01-18 | 1996-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-19 | 2000-01-18 | 2000-07-19 | $7700.00 | Window Closed / Lapsed |