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US4753900A
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Method of forming electrodes aligned with respect to a level of implantation in a substrate and a method of forming a charge transfer filter
Assignee: Thales SA
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Filing: 1986-12-17
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Granted: 1988-06-28
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Expires: 2006-12-17
Abstract
Abstract The invention provides a method of forming electrodes aligned with respect to an implantation level in a substrate, including the following main phases: formation of a dielectric layer on a substrate; formation of semiconducting or conducting elements which are to serve as mask for implantation; implantation; formation of a layer of conducting or semiconducting material; cutting out electrodes from said layer and from the semiconducting or conducting elements.
Inventors
- 👤 Pierre Blanchard
- 👤 Gerard Beal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:13
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/01; H10D44/041
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
153 words
A method of implementing electrodes substantially aligned with respect to an implantation level in a substrate, including the following successive steps: (a) a first phase of forming a first layer of a dielectric material on a substrate; (b) a second phase of forming a second layer of a semiconducting or conducting material; (c) a third phase of removing the semiconducting or conducting material from first zones where implantations are to be provided, on each side of at least a second zone where the semiconducting or conducting material is kept; (d) a fourth phase of implanting more particularly said first zones; (e) a fifth phase of forming a third layer of a semiconducting or conducting material; (f) a sixth phase of cuting out, from the third layer of semiconducting or conducting material and from the second layer of semiconducting or conducting material, electrodes separated by a space, said space situated in the second zone.
Claim 2
Independent Claim
153 words
A method of implementing electrodes substantially aligned with respect to an implantation level in a substrate, including the following successive steps: (a) a first phase of forming a first layer of a dielectric material on a substrate; (b) a second phase of forming a second layer of a semiconducting or conducting material; (c) a third phase of removing the semiconducting or conducting material from first zones where implantations are to be provided, on each side of at least a second zone where the semiconducting or conducting material is kept; (d) a fourth phase of implanting more particularly said first zones; (e) a fifth phase of forming a third layer of a semiconducting or conducting material; (f) a sixth phase of cuting out, from the third layer of semiconducting or conducting material and from the second layer of semiconducting or conducting material, electrodes separated by a space, said space situated in the second zone.
Claim 3
Dependent Claim
22 words
The method according to claim 1, wherein said third phase of removing the semiconducting or conducting material is performed by photolithographic etching.
Claim 4
Dependent Claim
18 words
The method according to claim 1, wherein said sixth phase of cutting out is performed by photolithographic etching.
Claim 5
Dependent Claim
31 words
The method according to claim 1, wherein said second layer of semiconducting or conducting material and said third layer of semiconducting or conducting material are of the same kind of material.
Claim 6
Dependent Claim
194 words
A method according to claim 1, for forming a charge transfer filter wherein: the second zone were the semiconducting or conducting material is kept following the third removal phase, is oriented along a first axis and has along this axis at least one narrowed portion and one widened portion; the sixth phase of cutting out electrodes comprises cutting out at least one first electrode oriented perpendicularly to the first axis and overlapping a part of the narrowed portion, and cutting out two half electrodes spaced from each other and oriented along a line perpendicular to the first axis and paralell to the first electrode, each half electrode overlapping the widened portion; and further comprising: a seventh phase of forming a fourth lay er of a dielectric material, an eighth phase of forming a fifth layer of a semiconducting or conducting material, and a nineth phase of cutting out from the fifth layer of semiconducting or conducting material electrodes parallel to the electrodes cut out in the sixth phase and each the nineth phase electrodes overlapping two of the electrodes of the sixth phase or one electrode and two half electrodes of the sixth phase.
Claim 7
Dependent Claim
30 words
The method according to claim 1, wherein said second layer of semiconducting or conducting material and said third layer of semiconducting or conducting material are of different kinds of material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-06-28 | 1991-12-28 | 1992-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-06-28 | 1995-12-28 | 1996-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-06-28 | 1999-12-28 | 2000-06-28 | $7700.00 | Window Closed / Lapsed |