US4748103A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Mask-surrogate semiconductor process employing dopant protective region
Assignee: Microsemi Corp Power Products Group
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Filing: 1986-03-21
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Granted: 1988-05-31
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Expires: 2006-03-21
Abstract
Abstract A mask-defect-immune process for making MOS semiconductor devices. The process features the creation of a surrogate mask in semiconductor wafer material per se, thus to eliminate the requirement that plural masks be used, and that plural mask alignments be performed. In all ways of practicing the invention, a surrogate mask is created in a dopant protective region.
Inventors
- 👤 Theodore G. Hollinger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:32
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10P; H10P30/00; H10P30/20; H10P30/22; H10P76/00; H10P76/40; H10D64/01; H10D64/017; H10D64/23; H10D64/251; H10D64/252; H10D64/2527; H10D64/256; Y; Y10; Y10S; Y10S430/00; Y10S430/146; Y10S438/00; Y10S438/942
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
100 words
A method employing no more than one independent mask of producing a plural-functional-region MOS semiconductor device in a substrate structure including an outer, MOS oxide layer, and wherein at least one doping step is involved, said method comprising forming over the oxide layer a dopant protective layer, creating a first and only mask-surrogate pattern-definer having a defined outline characteristic in such protective layer, and thereafter, employing the unaltered perimetral outline characteristic per se of such only-created pattern-definer for control and self-alignment masking to effect the making of the desired, final functional regions in the device, including a conductive-material deposition step.
Claim 2
Independent Claim
100 words
A method employing no more than one independent mask of producing a plural-functional-region MOS semiconductor device in a substrate structure including an outer, MOS oxide layer, and wherein at least one doping step is involved, said method comprising forming over the oxide layer a dopant protective layer, creating a first and only mask-surrogate pattern-definer having a defined outline characteristic in such protective layer, and thereafter, employing the unaltered perimetral outline characteristic per se of such only-created pattern-definer for control and self-alignment masking to effect the making of the desired, final functional regions in the device, including a conductive-material deposition step.
Claim 3
Dependent Claim
20 words
The method of claim 1, wherein said creating is accomplished in the absence of the use of any independent mask.
Claim 4
Dependent Claim
14 words
The method of claim 2, wherein said creating is performed by a controlled laser.
Claim 5
Dependent Claim
13 words
The method of claim 2, wherein said creating takes place through ion-beam bombardment.
Claim 6
Independent Claim
23 words
The method of claims 1, 2, 3 or 4, wherein the making of the final functional regions includes at least one diffusion step.
Claim 7
Independent Claim
94 words
A method of producing a plural-functional-region MOS semiconductor device in a substrate structure including an outer, MOS oxide layer, said method comprising forming over the oxide layer a dopant protective layer, in the absence of the use of any independent mask, creating a first and only mask-surrogate pattern-definer having a defined outline characteristic in such protective layer, and thereafter, employing the unaltered perimetral outline characteristic per se of such only-created pattern-definer for control and self-alignment masking to effect the making of the desired, final functional regions in the device, including a conductive-material deposition step.
Claim 8
Independent Claim
94 words
A method of producing a plural-functional-region MOS semiconductor device in a substrate structure including an outer, MOS oxide layer, said method comprising forming over the oxide layer a dopant protective layer, in the absence of the use of any independent mask, creating a first and only mask-surrogate pattern-definer having a defined outline characteristic in such protective layer, and thereafter, employing the unaltered perimetral outline characteristic per se of such only-created pattern-definer for control and self-alignment masking to effect the making of the desired, final functional regions in the device, including a conductive-material deposition step.
Claim 9
Dependent Claim
14 words
The method of claim 6, wherein said creating is performed by a controlled laser.
Claim 10
Dependent Claim
13 words
The method of claim 6, wherein said creating takes place through ion-beam bombardment.
Claim 11
Independent Claim
22 words
The method of claims 6, 7 or 8, wherein the making of the final functional regions includes at least one doping step.
Claim 12
Independent Claim
101 words
A method of producing a plural-functional-region MOS semiconductor device in a substrate structure including an outer MOS oxide layer, and wherein at least one doping step is involved, said method comprising forming over the oxide layer a dopant protective layer, creating, with a single, pre-configured, independent mask, a first and only mask-surrogate pattern-definer having a defined outline characteristic in such protective layer, and thereafter, employing the unaltered perimetral outline characteristic per se of such only-created pattern-definer, in lieu of any other independent mask, for control and self-alignment masking to effect the making of the desired, final functional regions in the device.
Claim 13
Independent Claim
101 words
A method of producing a plural-functional-region MOS semiconductor device in a substrate structure including an outer MOS oxide layer, and wherein at least one doping step is involved, said method comprising forming over the oxide layer a dopant protective layer, creating, with a single, pre-configured, independent mask, a first and only mask-surrogate pattern-definer having a defined outline characteristic in such protective layer, and thereafter, employing the unaltered perimetral outline characteristic per se of such only-created pattern-definer, in lieu of any other independent mask, for control and self-alignment masking to effect the making of the desired, final functional regions in the device.
Claim 14
Dependent Claim
19 words
The method of claim 1, wherein the making of the final functional regions includes at least one diffusion step.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-31 | 1991-11-30 | 1992-05-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-31 | 1995-11-30 | 1996-05-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-31 | 1999-11-30 | 2000-05-31 | $7700.00 | Window Closed / Lapsed |