US4615103A
Expired / Lapsed
US
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Method of forming isolation regions containing conductive patterns therein
Assignee: Toshiba Corp
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Filing: 1985-05-28
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Granted: 1986-10-07
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Expires: 2005-05-28
Abstract
Abstract A method of manufacturing a semiconductor device which comprises a step of forming a first groove in a semiconductor layer, a step of filling the first groove with a first insulating film, a step of selectively etching the first insulating film in the first groove to form at least one second groove having a small width, and a step of filling the second groove with a second insulating film to form an isolation layer having a large width and substantially flush with the semiconductor layer.
Inventors
- 👤 Shuichi Kameyama
- 👤 Satoshi Shinozaki
- 👤 Hiroshi Iwai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:45
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/041; H10W10/10; H10W10/17; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/05; Y10S148/085
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
83 words
A method of manufacturing a semiconductor device comprising the steps of: forming a first groove having a large width in a semiconductor layer; filling said first groove with a first insulating film; forming at least one second groove in said first insulating film in said first groove, said second groove being defined by an insulating material; and filling said second groove with a conductive film to form an isolating layer having a large width including said conductive film surrounded by said insulating material.
Claim 2
Independent Claim
83 words
A method of manufacturing a semiconductor device comprising the steps of: forming a first groove having a large width in a semiconductor layer; filling said first groove with a first insulating film; forming at least one second groove in said first insulating film in said first groove, said second groove being defined by an insulating material; and filling said second groove with a conductive film to form an isolating layer having a large width including said conductive film surrounded by said insulating material.
Claim 3
Dependent Claim
54 words
The method according to claim 1, wherein said step of filling said second groove with said conductive film includes depositing a conductive material on the entire surface and to a thickness no less than one half the width of said second grooves and subsequently etching said conductive material until said semiconductor layer is exposed.
Claim 4
Dependent Claim
39 words
The method according to claim 1, wherein said first insulating film and second insulating film are made of a material selected from a group consisting of SiO 2 , Si 3 N 4 and Al 2 O 3 .
Claim 5
Dependent Claim
36 words
The method according to claim 1, wherein said conductive film is made of a material selected from a group consisting of impurity-doped polycrystalline silicon impurity-doped amorphous silicon, tungsten silicide, molybdenum silicide, aluminum, molybdenum, titanium and tantalum.
Claim 6
Dependent Claim
36 words
The method according to claim 1, further comprising a step of selectively doping a portion of the semiconductor layer constituting the bottom of the first or second groove with impurities, thus forming a channel stopper region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-10-06 | 1990-04-07 | 1990-10-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-10-06 | 1994-04-07 | 1994-10-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-10-06 | 1998-04-07 | 1998-10-07 | $7700.00 | Window Closed / Lapsed |