Abstract A gate-source structure and fabrication method for a surface-gate static induction transistor. The method requires only one masking step during fabrication, thereby eliminating or minimizing mask registration problems during fabrication of the devices. The method and the device are characterized by a two-step etching process which forms T-shaped gate windows in layers of polycrystalline silicon with different doping levels. The source region is formed during an annealing step from the layer with high doping level. During the annealing step, the gate regions are also formed from gate impurities implanted previously in the gate windows. The source structure and the gate structure are separated by a silicon dioxide protective layer.
A vertical geometry static induction transistor comprised of: a substrate of highly doped n-type single crystal silicon; a metal drain electrode on one side of said substrate; an epitaxial layer of high resistivity n-type silicon on the opposite side of said substrate; a plurality of T-shaped structures of n-type polycrystalline silicon on said epitaxial layer, said T-shaped structures having wider portion on the top and a narrower portion on the bottom adjacent to said epitaxial layer; a plurality of T-shaped windows defined by adjacent T-shaped structures; said T-shaped windows wider on the bottom than at the top; a layer of silicon dioxide on the sides of said T-shaped windows; a gate region of p-type silicon in said epitaxial layer at the bottom of each of said T-shaped windows; a source region of highly doped n-type silicon in said epitaxial layer beneath each of said T-shaped structures; a metal gate electrode on top of each of said gate regions; and a metal source electrode on top of each of said T-shaped structures.
Claim 2
Dependent Claim
171 words
A vertical geometry static induction transistor comprised of: a substrate of highly doped n-type single crystal silicon; a metal drain electrode on one side of said substrate; an epitaxial layer of high resistivity n-type silicon on the opposite side of said substrate; a plurality of T-shaped structures of n-type polycrystalline silicon on said epitaxial layer, said T-shaped structures having wider portion on the top and a narrower portion on the bottom adjacent to said epitaxial layer; a plurality of T-shaped windows defined by adjacent T-shaped structures; said T-shaped windows wider on the bottom than at the top; a layer of silicon dioxide on the sides of said T-shaped windows; a gate region of p-type silicon in said epitaxial layer at the bottom of each of said T-shaped windows; a source region of highly doped n-type silicon in said epitaxial layer beneath each of said T-shaped structures; a metal gate electrode on top of each of said gate regions; and a metal source electrode on top of each of said T-shaped structures.