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US4729941A Expired / Lapsed US ⏱️ 0.0 years remaining

Photoresist processing solution with quaternary ammonium hydroxide

Assignee: Nisso Petrochemical Ind Co Ltd
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Filing: 1985-10-08
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Granted: 1988-03-08
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Expires: 2005-10-08
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Abstract

Abstract A photoresist processing solution includes a 2-hydroxyethyl-(mono-or polyoxyethyl) trialkyl ammonium hydroxide and is used in a process for development of photoresists having a solubility in aqueous alkaline solution which is a function of exposure to light.

Inventors

  • 👤 Kunio Itoh
  • 👤 Kimio Watabe
  • 👤 Masahiro Shiozaki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 21:42
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/30; G03F7/32; G03F7/322; G03F7/42; G03F7/422

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 98 words
A photoresist processing solution consisting essentially of: (a) a quaternary ammonium hydroxide of the formula I represented by the formula ##STR3## wherein R, R 1 and R 2 are the same and each is a methyl group; and n is a positive number of 1; and (b) a solvent in which compound (a) is dissolved in a concentration of from about 0.05 to 30 wt. %, such that said solution is suitable for developing or stripping a radiation-imaged photoresist coating, wherein said solvent is selected from the group consisting of water, a water-miscible organic solvent, and mixtures thereof.
Claim 2
Dependent Claim 98 words
A photoresist processing solution consisting essentially of: (a) a quaternary ammonium hydroxide of the formula I represented by the formula ##STR3## wherein R, R 1 and R 2 are the same and each is a methyl group; and n is a positive number of 1; and (b) a solvent in which compound (a) is dissolved in a concentration of from about 0.05 to 30 wt. %, such that said solution is suitable for developing or stripping a radiation-imaged photoresist coating, wherein said solvent is selected from the group consisting of water, a water-miscible organic solvent, and mixtures thereof.
Claim 3
Dependent Claim 36 words
The photoresist processing solution of claim 1 wherein said water-miscible organic solvent is selected from the group consisting of C 1 to C 4 -aliphatic alcohols, acetone, methyl ethyl ketone, N-methylpyrrolidone, dimethyl sulfoxide, N,N-dimethylformamide, and N,N-dimethylacetamide.
Claim 4
Dependent Claim 16 words
The photoresist processing solution of claim 2, wherein the water-miscible organic solvent is acetone or N-methylpyrrolidone.
Claim 5
Dependent Claim 12 words
The photoresist processing solution of claim 1, wherein the solvent is water.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-03-08 1991-09-07 1992-03-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-03-08 1995-09-07 1996-03-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-03-08 1999-09-07 2000-03-08 $7700.00 Window Closed / Lapsed

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