US4411735A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Polymeric insulation layer etching process and composition
Assignee: SEMICONDUCTOR Corp A CORP OF
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Filing: 1982-05-06
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Granted: 1983-10-25
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Expires: 2002-05-06
Abstract
Abstract In a process for fabricating semiconductor devices having a patterned polyimide (PI) or polyimide-iso-indroquinazalinedione (PIQ) insulating layer on the device, a layer of uncured PI or PIQ resin is applied on a surface of the device. The resin layer is heated to produce a first level of partial curing in the resin layer. A photoresist is applied to the partially cured resin layer where it is to be removed. The partially cured resin layer is etched to produce the patterned layer. The patterned layer is then heated to produce a second level of partial cure, sufficient to prevent organic photoresist strippers from attacking the patterned layer. The developed photoresist is then stripped with an organic photoresist stripper, and the patterned layer heated a third time a sufficient extent to complete the curing of the PI and PIQ resin. The process desirably uses etching compositions comprising an amine etchant having the formula R--CH 2 --CH 2 --NH 2 , where R is an alkyl group having from 1 to 4 carbon atoms or an aryl group having from 6 to 12 carbon atoms, or an etchant comprising a mixture of quaternary ammonium hydroxide and an N-alkyl-pyrrolidinone. In both cases, water may be used as a solvent for the etching compositions.
Inventors
- 👤 Jagdish G. Belani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 10:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P14/63; H10P14/6326; H10P14/6342; H10P14/65; H10P14/6502; H10P14/6506; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; Y; Y10; Y10S; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
140 words
A process for fabricating a semiconductor device having a patterned polyimide or polyimide-iso-indroquinazolinedione insulating layer on said device, comprising applying a layer of uncured polyimide or polyimide-iso-indroquinazolinedione resin on a surface of said device, heating said resin layer to produce a first level of partial curing in said resin layer, applying a photoresist layer to said partially cured resin layer, developing said photoresist layer to uncover said partially cured resin layer where it is to be removed, etching said partially cured resin layer to produce said patterned layer, heating said patterned layer to produce a second level of partial curing which is sufficient to prevent organic photoresist strippers from attacking the patterned layer, stripping the developed photoresist with an organic photoresist stripper, and heating said patterned layer a sufficient extent to complete the curing of said polyimide or polyimide-iso-indroquinazolinedione resin.
Claim 2
Dependent Claim
140 words
A process for fabricating a semiconductor device having a patterned polyimide or polyimide-iso-indroquinazolinedione insulating layer on said device, comprising applying a layer of uncured polyimide or polyimide-iso-indroquinazolinedione resin on a surface of said device, heating said resin layer to produce a first level of partial curing in said resin layer, applying a photoresist layer to said partially cured resin layer, developing said photoresist layer to uncover said partially cured resin layer where it is to be removed, etching said partially cured resin layer to produce said patterned layer, heating said patterned layer to produce a second level of partial curing which is sufficient to prevent organic photoresist strippers from attacking the patterned layer, stripping the developed photoresist with an organic photoresist stripper, and heating said patterned layer a sufficient extent to complete the curing of said polyimide or polyimide-iso-indroquinazolinedione resin.
Claim 3
Dependent Claim
43 words
The process of claim 1 in which said heating to produce the first level of partial curing in said resin layer is at a temperature of from about 120° to about 150° C., for a time sufficient to remove solvent from said resin.
Claim 4
Dependent Claim
34 words
The process of claim 2 in which said heating to produce the second level of curing in said patterned layer is carried out at a temperature of about 180° C. to about 220° C.
Claim 5
Dependent Claim
24 words
The process of claim 3 in which the curing of said patterned layer is completed at a temperature of at least about 300° C.
Claim 6
Dependent Claim
14 words
The process of claim 1 in which said photoresist layer is a negative photoresist.
Claim 7
Dependent Claim
173 words
A process for fabricating a semi-conductor device having a patterned polyimide or polyimide-iso-indroquinazoline-dione insulating layer on a surface of said device, comprising applying a layer of uncured polyimide or polyimide-iso-indroquinazolindione insulating resin on a surface of said device, heating said resin layer to produce partial curing in said resin layer, applying a layer of photoresist to said partially cured resin layer, developing said photoresist layer to uncover said partially cured resin layer, etching said partially cured resin layer with an amine etchant having the formula R--CH2--CH2--NH2, wherein R is an alkyl group having from 1 to 4 carbon atoms or an aryl group having from 6 to 12 carbon atoms, the amine etchant being provided in substantially equimolar solution with water, or an etchant comprising a mixture of a quaternary ammonium hydroxide and an N-alkyl pyrrolidinone, the quaternary ammonium hydroxide and N-alkyl pyrrolidinone etchant being provided as substantially equal parts by volume of a solution containing from about 1 to about 10 weight percent quaternary ammonium hydroxide in water and the N-alkyl pyrrolidinone.
Claim 8
Dependent Claim
173 words
A process for fabricating a semi-conductor device having a patterned polyimide or polyimide-iso-indroquinazoline-dione insulating layer on a surface of said device, comprising applying a layer of uncured polyimide or polyimide-iso-indroquinazolindione insulating resin on a surface of said device, heating said resin layer to produce partial curing in said resin layer, applying a layer of photoresist to said partially cured resin layer, developing said photoresist layer to uncover said partially cured resin layer, etching said partially cured resin layer with an amine etchant having the formula R--CH2--CH2--NH2, wherein R is an alkyl group having from 1 to 4 carbon atoms or an aryl group having from 6 to 12 carbon atoms, the amine etchant being provided in substantially equimolar solution with water, or an etchant comprising a mixture of a quaternary ammonium hydroxide and an N-alkyl pyrrolidinone, the quaternary ammonium hydroxide and N-alkyl pyrrolidinone etchant being provided as substantially equal parts by volume of a solution containing from about 1 to about 10 weight percent quaternary ammonium hydroxide in water and the N-alkyl pyrrolidinone.
Claim 9
Dependent Claim
12 words
The process of claim 6 in which R is a methyl group.
Claim 10
Dependent Claim
12 words
The process of claim 6 in which R is a phenyl group.
Claim 11
Dependent Claim
20 words
The process of claim 8 in which said etching is followed by rinsing in a lower alkyl bisalkoxyalkane or alkanol.
Claim 12
Dependent Claim
14 words
The process of claim 6 in which the quaternary ammonium hydroxide is tetramethylammonium hydroxide.
Claim 13
Dependent Claim
13 words
The process of claim 10 in which the N-alkyl pyrrolidinone is N-methyl pyrrolidinone.
Claim 14
Dependent Claim
53 words
An etchant solution for etching patterns in a polyimide or polyimide-iso-indroquniazolinedione insulating layer on a semiconductor device, which comprises a solution of substantially equal parts by volume of about 1.0 to about 10 weight percent of a quaternary ammonium hydroxide in water and about 40 to 60 weight percent of an N-alkyl pyrrolidinone.
Claim 15
Dependent Claim
53 words
An etchant solution for etching patterns in a polyimide or polyimide-iso-indroquniazolinedione insulating layer on a semiconductor device, which comprises a solution of substantially equal parts by volume of about 1.0 to about 10 weight percent of a quaternary ammonium hydroxide in water and about 40 to 60 weight percent of an N-alkyl pyrrolidinone.
Claim 16
Dependent Claim
14 words
The etchant solution of claim 12 in which said N-alkyl pyrrolidinone is N-methyl pyrrolidinone.
Claim 17
Dependent Claim
15 words
The etchant solution of claim 13 in which said quaternary ammonium hydroxide is tetramethylammonium hydroxide.
Claim 18
Dependent Claim
61 words
An etchant solution for etching patterns in a polyimide or polyimide-iso-indroquinazolinedione insulating layer on a semiconductor device, which comprises substantially equimolar proportions of an amine having the formula R--CH 2 --CH 2 --NH 2 , wherein R is an alkyl group having from 1 to 4 carbon atoms or an aryl group having from 6 to 12 carbon atoms, and water.
Claim 19
Dependent Claim
61 words
An etchant solution for etching patterns in a polyimide or polyimide-iso-indroquinazolinedione insulating layer on a semiconductor device, which comprises substantially equimolar proportions of an amine having the formula R--CH 2 --CH 2 --NH 2 , wherein R is an alkyl group having from 1 to 4 carbon atoms or an aryl group having from 6 to 12 carbon atoms, and water.
Claim 20
Dependent Claim
16 words
The etchant solution of claim 15 in which R is a methyl or a phenyl group.
Claim 21
Dependent Claim
73 words
The process of claim 6 additionally comprising the steps of heating the partially cured resin layer after the etching step to produce a second level of partial curing in said resin layer which is sufficient to prevent organic photoresist strippers from attacking the patterned layer, stripping the developed photoresist layer with an organic photoresist stripper, and heating said patterned layer a sufficient extent to complete the curing of said polyimide or polyimide-iso-indroquinazolinedione resin.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-10-24 | 1987-04-25 | 1987-10-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-10-24 | 1991-04-25 | 1991-10-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-10-24 | 1995-04-25 | 1995-10-25 | $7700.00 | Window Closed / Lapsed |