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US3871930A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of etching films made of polyimide based polymers

Assignee: Texas Instruments Inc
•
Filing: 1973-12-19
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Granted: 1975-03-18
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Expires: 1993-12-19
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Abstract

Abstract Methods for etching films made of polyimide based polymers, including polyamide-imides, are provided, which include dissolving desired portions of the film in a solution of a basic compound in a non-aqueous solvent.

Inventors

  • 👤 John G Fish

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 07:50
CPC Classifications
C; C08; C08J; C08J7/00; C08J7/02; C08J7/12; H; H05; H05K; H05K3/00; H05K3/0011; H05K3/0017; H05K3/002; C08J2379/00; C08J2379/04; C08J2379/08; H05K1/00; H05K1/02; H05K1/03; H05K1/0313; H05K1/032; H05K1/0346; H05K2201/00; H05K2201/01; H05K2201/0137; H05K2201/0154; H05K2203/00; H05K2203/07; H05K2203/0779; H05K2203/0783

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 48 words
A PROCESS FOR ETCHING A FILM OF A POLYIMIDE BASED POLYMER WHICH COMPRISES CONTACTING SAID FILM WITH A SOLUTION OF A STRONG ORGANIC BASE IN A NON-AQUEOUS SOLVENT SELECTED FROM THE GROUP CONSISTING OF DIMETHYLSULFOXIDE, SULFOLANE, DIMETHYLFORMAMIDE, HEXAMETHYLPHOSPHORAMIDE, N-METHYL PYRROLIDONE, N, N-DIMENTHYACETAMIDE, N, N-DIMETHYLFORMAMIDE, N, N-DIMETHYLCETAMIDE, AND PYRIDINE.
Claim 2
Dependent Claim 48 words
A PROCESS FOR ETCHING A FILM OF A POLYIMIDE BASED POLYMER WHICH COMPRISES CONTACTING SAID FILM WITH A SOLUTION OF A STRONG ORGANIC BASE IN A NON-AQUEOUS SOLVENT SELECTED FROM THE GROUP CONSISTING OF DIMETHYLSULFOXIDE, SULFOLANE, DIMETHYLFORMAMIDE, HEXAMETHYLPHOSPHORAMIDE, N-METHYL PYRROLIDONE, N, N-DIMENTHYACETAMIDE, N, N-DIMETHYLFORMAMIDE, N, N-DIMETHYLCETAMIDE, AND PYRIDINE.
Claim 3
Dependent Claim 17 words
The process in accordance with claim 1, wherein said strong organic base is a quaternary ammonium hydroxide.
Claim 4
Dependent Claim 18 words
The process in accordance with claim 2, wherein said hydroxide is tetraethylammonium hydroxide and said solvent is dimethylsulfoxide.
Claim 5
Dependent Claim 18 words
The process in accordance with claim 2, wherein said hydroxide is tetraethylammonium hydroxide and said solvent is pyridine.
Claim 6
Dependent Claim 22 words
The process in accordance with claim 3, wherein said hydroxide comprises at least about 30 percent of volume of said etching solution.
Claim 7
Dependent Claim 82 words
A process useful in making a printed circuit comprising: providing a laminate having a first layer of film of polyimide based polymer and a second metal layer; coating said first layer with a photomask; exposing and developing said photomask to form a desired pattern; providing an etching solution comprising a quaternary ammonium hydroxide in a nonaqueous solvent; contacting said first layer with said etching solution to etch the desired portions of said film; and removing the etch reaction product from said laminate.
Claim 8
Dependent Claim 82 words
A process useful in making a printed circuit comprising: providing a laminate having a first layer of film of polyimide based polymer and a second metal layer; coating said first layer with a photomask; exposing and developing said photomask to form a desired pattern; providing an etching solution comprising a quaternary ammonium hydroxide in a nonaqueous solvent; contacting said first layer with said etching solution to etch the desired portions of said film; and removing the etch reaction product from said laminate.
Claim 9
Dependent Claim 31 words
The process in accordance with claim 6, wherein saId solvent is selected from the group consisting of dimethylsulfoxide, sulfolane, dimethylformamide, hexamethylphosphoramide, N-methyl pyrrolidone, N, N-dimethylacetamide, N, N-diethylformamide, N, N-diethylacetamide, and pyridine.
Claim 10
Dependent Claim 18 words
The process in accordance with claim 7, wherein said hydroxide is tetraethylammonium hydroxide and said solvent is dimethylsulfoxide.
Claim 11
Dependent Claim 18 words
The process in accordance with claim 7, wherein said hydroxide is tetraethylammonium hydroxide and said solvent is pyridine.
Claim 12
Dependent Claim 22 words
The process in accordance with claim 8, wherein said hydroxide comprises at least about 30 percent by volume of said etching solution.
Claim 13
Dependent Claim 21 words
The process in accordance with claim 6, wherein said etching solution is stirred while it is in contact with said film.

References Cited (Backward Citations)

US3736170A Cited
US3767490A Cited
US3770528A Cited
US3791848A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1978-03-17 1978-09-16 1979-03-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1982-03-17 1982-09-16 1983-03-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1986-03-17 1986-09-16 1987-03-18 $7700.00 Window Closed / Lapsed

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