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Patent US4728534A successfully refreshed from Google Patents.
US4728534A
Expired / Lapsed
US
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Thick film conductor structure
Assignee: Motorola Solutions Inc
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Filing: 1986-08-04
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Granted: 1988-03-01
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Expires: 2006-08-04
Abstract
Abstract In one embodiment of the present invention a thick film resistor structure comprising common materials is disclosed. The structure includes a supporting carrier as a base for the thick film resistor arrangement, which comprises a resistive material printed on the carrier, first and second noble metal terminating layers connected to either side of the resistive material, first and second barrier layers respectively connected to the first and second noble metal terminating layers, and first and second conducting layers respectively connected to said first and second barrier layers. The barrier layers are preferably composed of nickel or tungsten, whereas the noble metal terminating layers are preferably composed of silver. The resistive material, being formed between the terminating layers, is electrically connected to said copper conducting layers to form a precise thick film resistor structure whose resistance is measurable between said conducting layers.
Inventors
- 👤 Roland K. Ho
- 👤 Richard H. Jung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 17:17
CPC Classifications
H; H05; H05K; H05K1/00; H05K1/16; H05K1/167; H01; H01C; H01C17/00; H01C17/28; H05K3/00; H05K3/46; H05K3/4685; H05K1/02; H05K1/09; H05K1/092; H05K2201/00; H05K2201/03; H05K2201/0332; H05K2201/0335; H05K2201/035; H05K2203/00; H05K2203/14; H05K2203/1453
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
84 words
A method for coupling a resistive material to a conducting layer on a supporting carrier, comprising the steps of: forming a terminating layer on the carrier; positioning the conducting layer on the carrier such that it is separated from the terminating layer by a gap; forming a barrier layer in the gap such that it couples the conducting layer to the terminating layer; and, thereafter, coupling the resistive material to the terminating layer, such that the conducting layer is coupled to the resistive material.
Claim 2
Independent Claim
84 words
A method for coupling a resistive material to a conducting layer on a supporting carrier, comprising the steps of: forming a terminating layer on the carrier; positioning the conducting layer on the carrier such that it is separated from the terminating layer by a gap; forming a barrier layer in the gap such that it couples the conducting layer to the terminating layer; and, thereafter, coupling the resistive material to the terminating layer, such that the conducting layer is coupled to the resistive material.
Claim 3
Dependent Claim
36 words
The method for coupling a resistive material to a conducting layer, according to claim 1, wherein the step of forming the terminating layer includes the step of firing the terminating layer on the carrier in air.
Claim 4
Dependent Claim
38 words
The method for coupling a resistive material to a conducting layer, according to claim 1, wherein the step of postitioning the conducting layer includes the step of cofiring the conducting layer with the barrier layer on the carrier.
Claim 5
Dependent Claim
34 words
The method for coupling a resistive material to a conducting layer, according to claim 1, wherein the step of forming the barrier layer includes the step of firing the barrier layer on the carrier.
Claim 6
Dependent Claim
23 words
The method for coupling a resistive material to a conducting layer, according to claim 1, wherein the terminating layer contains a noble metal.
Claim 7
Dependent Claim
21 words
The method for coupling a resistive material to a conducting layer, according to claim 1, wherein the conducting layer contains copper.
Claim 8
Dependent Claim
21 words
The method for coupling a resistive material to a conducting layer, according to claim 1, wherein the barrier layer contains nickel.
Claim 9
Dependent Claim
21 words
The method for coupling a resistive material to a conducting layer, according to claim 1, wherein the barrier layer contains tungsten.
Claim 10
Dependent Claim
28 words
The method for coupling a resistive material to a conducting layer, according to claim 1, further including the step of firing a dielectric layer over said conducting layer.
Claim 11
Independent Claim
76 words
A method for forming a thick film resistor structure on a supporting carrier, comprising the sequential steps of: securing first and second substructures on the carrier with space therebetween, each said substructure comprising: a barrier layer connecting a terminating layer with a conducting layer; securing resistive material to said first and second substructures such that the resistive material connects said terminating layers to form a thick film resistor whose resistance is measurable between said conducting layers.
Claim 12
Independent Claim
76 words
A method for forming a thick film resistor structure on a supporting carrier, comprising the sequential steps of: securing first and second substructures on the carrier with space therebetween, each said substructure comprising: a barrier layer connecting a terminating layer with a conducting layer; securing resistive material to said first and second substructures such that the resistive material connects said terminating layers to form a thick film resistor whose resistance is measurable between said conducting layers.
Claim 13
Dependent Claim
25 words
The method for forming a thick film resistor structure on a supporting carrier, according to claim 10, wherein the terminating layer contains a noble metal.
Claim 14
Dependent Claim
23 words
The method for forming a thick film resistor structure on a supporting carrier, according to claim 10, wherein the conducting layer contains copper.
Claim 15
Dependent Claim
23 words
The method for forming a thick film resistor structure on a supporting carrier, according to claim 10, wherein the barrier layer contains nickel.
Claim 16
Dependent Claim
23 words
The method for forming a thick film resistor structure on a supporting carrier, according to claim 10, wherein the barrier layer contains tungsten.
Claim 17
Dependent Claim
30 words
The method for forming a thick film resistor structure on a supporting carrier, according to claim 10, further including the step of firing a dielectric layer over said conducting layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-03-01 | 1991-08-31 | 1992-03-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-03-01 | 1995-08-31 | 1996-03-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-03-01 | 1999-08-31 | 2000-03-01 | $7700.00 | Window Closed / Lapsed |