Combined integrated circuit/ferroelectric memory device, and ion beam methods of constructing same

Claim 1

A method of depositing a ferroelectric material by ion beam techniques, comprising: (a) mounting a target bed of a ferroelectric material in an ion beam machine; (b) mounting a substrate a predetermined distance from said target bed within said ion beam machine; (c) evacuating said ion beam machine to a predetermined vacuum level; (d) directing a beam of high energy particles at said target bed whereby molecular sized amounts of said ferroelectric material are ejected from said target bed and subsequently deposited on said substrate; (e) said ferroelectric material being selected from the group consisting of metal nitrates, metal nitrites, metal phosphates, and sulfates; (f) said target bet comprising a support member having an amount of ferroelectric materials substantially tightly adhered to one surface thereof; and (g) said supporting member being substantially planar and having a recess formed in one surface thereof for containing said ferroelectric material.

Claim 2

A method of depositing a ferroelectric material by ion beam techniques, comprising: (a) mounting a target bed of a ferroelectric material in an ion beam machine; (b) mounting a substrate a predetermined distance from said target bed within said ion beam machine; (c) evacuating said ion beam machine to a predetermined vacuum level; (d) directing a beam of high energy particles at said target bed whereby molecular sized amounts of said ferroelectric material are ejected from said target bed and subsequently deposited on said substrate; (e) said ferroelectric material being selected from the group consisting of metal nitrates, metal nitrites, metal phosphates, and sulfates; (f) said target bet comprising a support member having an amount of ferroelectric materials substantially tightly adhered to one surface thereof; and (g) said supporting member being substantially planar and having a recess formed in one surface thereof for containing said ferroelectric material.

Claim 8

A method of forming target beds for use in an ion beam deposition process, comprising: (a) heating a support member having a predetermined amount of a material supported thereon at a predetermined temperature until said material is melted; (b) cooling said material so that it solidifies into a substantially fine grain film which is substantially tightly adhered to said support member; (c) said support member is substantially planar and has a recess formed in one surface thereof for containing said material; and (d) said cooling of said material proceeds from the approximate center thereof outwardly whereby nucleation of said material permeates from said approximate center thereof outwardly.

Claim 9

A method of forming target beds for use in an ion beam deposition process, comprising: (a) heating a support member having a predetermined amount of a material supported thereon at a predetermined temperature until said material is melted; (b) cooling said material so that it solidifies into a substantially fine grain film which is substantially tightly adhered to said support member; (c) said support member is substantially planar and has a recess formed in one surface thereof for containing said material; and (d) said cooling of said material proceeds from the approximate center thereof outwardly whereby nucleation of said material permeates from said approximate center thereof outwardly.

Claim 12

A method of fabricating a combined integrated circuit/ferroelectric device comprising the steps of: (a) removing predetermined portions from a protective dielectric surface which covers an integrated circuit for providing contacts with the input/output logic of said integrated circuit; (b) depositing and defining a first conductive layer over said protective dielectric surface; (c) depositing a ferroelectric layer using ion beam techniques over said first conductive layer; (d) depositing a second conductive layer over said ferroelectric layer; (e) defining said ferroelectric layer and said second conductive layer including ion milling or overetching portions of said second conductive layer, said ferroelectric layer, and said protective dielectric surface; (f) depositing and defining a passavation layer; (g) depositing a third conductive layer for electrically coupling the defined second conductive layer to said input/output logic, and defining said third conductive layer.

Claim 13

A method of fabricating a combined integrated circuit/ferroelectric device comprising the steps of: (a) removing predetermined portions from a protective dielectric surface which covers an integrated circuit for providing contacts with the input/output logic of said integrated circuit; (b) depositing and defining a first conductive layer over said protective dielectric surface; (c) depositing a ferroelectric layer using ion beam techniques over said first conductive layer; (d) depositing a second conductive layer over said ferroelectric layer; (e) defining said ferroelectric layer and said second conductive layer including ion milling or overetching portions of said second conductive layer, said ferroelectric layer, and said protective dielectric surface; (f) depositing and defining a passavation layer; (g) depositing a third conductive layer for electrically coupling the defined second conductive layer to said input/output logic, and defining said third conductive layer.