Method of depositing III-V compounds on group IV element wafers by the cluster ion technique

Claim 1

A method of producing a compound semiconductor wafer which comprises cleaning the surface of a monocrystalline substrate of a group-IV element semiconductor by inert-gas ion beam etching, said substrate being held in a high vacuum atmosphere, separately evaporating vaporizing-materials consisting of or containing the component elements of a desired III-V compound semiconductor to produce vapors of said component elements, jetting said vapors into said high vacuum region to form clusters of said component elements, ionizing said clusters to form cluster ions, and giving kinetic energy to said cluster ions by an electricfield to make them impinge on the surface of said substrate so that an epitaxial layer of said desired compound semiconductor is formed on the surface of said substrate.

Claim 2

A method of producing a compound semiconductor wafer which comprises cleaning the surface of a monocrystalline substrate of a group-IV element semiconductor by inert-gas ion beam etching, said substrate being held in a high vacuum atmosphere, separately evaporating vaporizing-materials consisting of or containing the component elements of a desired III-V compound semiconductor to produce vapors of said component elements, jetting said vapors into said high vacuum region to form clusters of said component elements, ionizing said clusters to form cluster ions, and giving kinetic energy to said cluster ions by an electricfield to make them impinge on the surface of said substrate so that an epitaxial layer of said desired compound semiconductor is formed on the surface of said substrate.

Claim 3

A method of producing a compound semiconductor wafer which comprises cleaning the surface of a monocrystalline substrate of a group-IV element semiconductor by inert-gas ion beam etching, said substrate being held in a high vacuum atmosphere, separately evaporating vaporizing-materials consisting of or containing the component elements of a desired III-V compound semiconductor to produce vapors of said component elements, jetting said vapors into said high vacuum region to form clusters of said component elements, vaporizing an impurity material for determining the conduction type of said desired compound semiconductor, ionizing said clusters to form cluster ions, accelerating said cluster ions while giving kinetic energy thereto by an electric field to deposit them on the surface of said substrate together with the vapor of said impurity material so that an epitaxial layer of said desired compound semiconductor having a predetermined conduction type is grown on the surface of said substrate.

Claim 4

A method of producing a compound semiconductor wafer which comprises cleaning the surface of a monocrystalline substrate of a group-IV element semiconductor by inert-gas ion beam etching, said substrate being held in a high vacuum atmosphere, separately evaporating vaporizing-materials consisting of or containing the component elements of a desired III-V compound semiconductor to produce vapors of said component elements, jetting said vapors into said high vacuum region to form clusters of said component elements, vaporizing an impurity material for determining the conduction type of said desired compound semiconductor, ionizing said clusters to form cluster ions, accelerating said cluster ions while giving kinetic energy thereto by an electric field to deposit them on the surface of said substrate together with the vapor of said impurity material so that an epitaxial layer of said desired compound semiconductor having a predetermined conduction type is grown on the surface of said substrate.

Claim 5

A method of producing a compound semiconductor wafer which comprises cleaning the surface of a monocrystalline substrate of a group-IV element semiconductor by inert-gas ion beam etching, said substrate being held in a high vacuum atmosphere, separately evaporating vaporizing-materials consisting of or containing the component elements of a first desired III-V compound semiconductor to produce vapors of said component elements, jetting said vapors into said high vacuum region to form clusters of said component elements, vaporizing an impurity material for determining the conduction type of said desired compound semiconductor, ionizing said clusters to form cluster ions, accelerating said cluster ions while giving kinetic energy thereto by an electric field to deposit them on the surface of said substrate together with the vapor of said impurity material so that an epitaxial layer of said desired compound semiconductor having a predetermined conduction type is grown on the surface of said substrate, and forming an epitaxial layer of a second desired compound semiconductor on said epitaxial layer of said first desired compound semiconductor having said predetermined conduction type, said second desired compound semiconductor having a conduction type opposite to that of said first desired compound semiconductor so that a P-N junction is formed therebetween.

Claim 6

A method of producing a compound semiconductor wafer which comprises cleaning the surface of a monocrystalline substrate of a group-IV element semiconductor by inert-gas ion beam etching, said substrate being held in a high vacuum atmosphere, separately evaporating vaporizing-materials consisting of or containing the component elements of a first desired III-V compound semiconductor to produce vapors of said component elements, jetting said vapors into said high vacuum region to form clusters of said component elements, vaporizing an impurity material for determining the conduction type of said desired compound semiconductor, ionizing said clusters to form cluster ions, accelerating said cluster ions while giving kinetic energy thereto by an electric field to deposit them on the surface of said substrate together with the vapor of said impurity material so that an epitaxial layer of said desired compound semiconductor having a predetermined conduction type is grown on the surface of said substrate, and forming an epitaxial layer of a second desired compound semiconductor on said epitaxial layer of said first desired compound semiconductor having said predetermined conduction type, said second desired compound semiconductor having a conduction type opposite to that of said first desired compound semiconductor so that a P-N junction is formed therebetween.