US3615931A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Technique for growth of epitaxial compound semiconductor films
Assignee: AT&T Inc
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Filing: 1968-12-27
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Granted: 1971-10-26
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Expires: 1988-12-27
Abstract
Abstract Epitaxial growth of Group III(a)-V(a) semiconductor compound films is effected in an ultrahigh vacuum by directing collimated molecular beams at the surface of a suitable substrate member preheated to a temperature ranging from 450*-650* C. The described process is a nonequilibrium growth technique which permits the growth of epitaxial films less than 1 micron in thickness at temperatures appreciably below those commonly employed in epitaxy.
Inventors
- 👤 John R Arthur Jr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:04
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/40; H; H10; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; Y; Y10; Y10S; Y10S148/00; Y10S148/017; Y10S148/049; Y10S148/065; Y10S148/072; Y10S148/084; Y10S148/15; Y10S148/158; Y10S148/169
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
15 words
A method in accordance with claim 1 wherein said substrate possesses an atomically clean surface.
Claim 2
Dependent Claim
18 words
A method in accordance with claim 1 wherein said pressure is less than 5 X 10 8 torr.
Claim 3
Dependent Claim
48 words
A method in accordance with claim 1 wherein said molecular beam is formed by heating at least one gun member containing the constituent components of the desired epitaxial film to a temperature sufficient to vaporize said components and permitting the resultant vapor to impinge upon a collimating frame.
Claim 4
Dependent Claim
14 words
A method in accordance with claim 4 wherein said gun member contains gallium arsenide.
Claim 5
Dependent Claim
27 words
A method in accordance with claim 4 wherein a pair of gun members are employed and in which one contains gallium arsenide and the other contains gallium.
Claim 6
Dependent Claim
14 words
A method in accordance with claim 4 wherein said gun member contains gallium phosphide.
Claim 7
Dependent Claim
19 words
A method in accordance with claim 6 wherein one gun contains gallium phosphide and the other contains gallium arsenide.
Claim 8
Dependent Claim
24 words
A method in accordance with claim 8 wherein the phosphorus-to-arsenic ratio in the vapor is four times the phosphorus-to-arsenic ratio in the bulk material.
Claim 9
Dependent Claim
20 words
A method in accordance with claim 4 wherein three guns are employed and in which one gun contains a dopant.
Claim 10
Dependent Claim
14 words
A method in accordance with claim 10 wherein said dopant is an N-type material.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-10-25 | 1975-04-26 | 1975-10-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-10-25 | 1979-04-26 | 1979-10-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-10-25 | 1983-04-26 | 1983-10-26 | $7700.00 | Window Closed / Lapsed |