US4013533A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Volatilization and deposition of a semi-conductor substance and a metallic doping impurity
Assignee: Bpifrance Financement SA
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Filing: 1975-03-25
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Granted: 1977-03-22
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Expires: 1995-03-25
Abstract
Abstract A method and apparatus for producing a thin semi-conductor coating on a substrate in a vacuum enclosure, by depositing on the substrate a semi-conductor substance volatilized by a plasma from a source in the enclosure and also depositing on the substrate a metallic doping impurity volatilized by the plasma from another source in the enclosure.
Inventors
- 👤 Gerard Cohen-Solal
- 👤 Alain Zozime
- 👤 Claude Sella
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 12:08
CPC Classifications
H; H10; H10P; H10P95/00; C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/35; C23C14/352; C23C14/354; C23C14/355; H10F; H10F99/00; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2913; H10P14/2917; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3432; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/3446; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/063; Y10S148/169; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
152 words
A process for making a semi-conductor device having a p-n or n-p junction by a method comprising the steps of forming a first doped layer by sputter depositing on a substrate in a vacuum enclosure containing a lowpressure ionic plasma, a semi-conductor substance of an alloy Cd x Hg 1-x Te where x is a number between 0 and 1, volatilized from a source or target first comprising Cd x Hg 1-x Te in the enclosure, and co-sputter depositing an n-type metallic doping impurity from the group consisting of aluminum, indium and gallium, volatilized from a second source or target in the enclosure; and forming a second doped layer on said first doped layer by co-sputter depositing Cd x Hg 1-x Te, volatilized from said first source, and a p-type metallic doping impurity from the group consisting of gold, copper and silver, volatilized from a third source or target in the enclosure.
Claim 2
Dependent Claim
152 words
A process for making a semi-conductor device having a p-n or n-p junction by a method comprising the steps of forming a first doped layer by sputter depositing on a substrate in a vacuum enclosure containing a lowpressure ionic plasma, a semi-conductor substance of an alloy Cd x Hg 1-x Te where x is a number between 0 and 1, volatilized from a source or target first comprising Cd x Hg 1-x Te in the enclosure, and co-sputter depositing an n-type metallic doping impurity from the group consisting of aluminum, indium and gallium, volatilized from a second source or target in the enclosure; and forming a second doped layer on said first doped layer by co-sputter depositing Cd x Hg 1-x Te, volatilized from said first source, and a p-type metallic doping impurity from the group consisting of gold, copper and silver, volatilized from a third source or target in the enclosure.
Claim 3
Dependent Claim
14 words
The process of claim 1, where x is 0, the semi-conductor being Hg Te.
Claim 4
Dependent Claim
14 words
The process of claim 1, where x is 1, the semi-conductor being Cd Te.
References Cited (Backward Citations)
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US3615931A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-03-21 | 1980-09-20 | 1981-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-03-21 | 1984-09-20 | 1985-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-03-21 | 1988-09-20 | 1989-03-22 | $7700.00 | Window Closed / Lapsed |