Schottky barrier type solid-state element

Claim 1

A flexible Schottky barrier type solid-state element comprising: a flexible film substrate board; a first metallic film layer deposited on said flexible film substrate board by the ionized-cluster-beam deposition process wherein a material to be deposited is vaporized into a vapor, injected into a vacuum region of about 10 -2 Torr or less to form aggregates of said vapor called clusters, said clusters are bombarded with electrons to produce ionized clusters, and said ionized clusters are accelerated by an electric field such that they impinge on a surface, thereby forming a film layer of said material on said surface, said first metallic film layer forming an ohmic contact semiconductor-side terminal electrode; a semiconductor film layer deposited on said first metallic film layer by said ionized-cluster-beam deposition process, a second metallic film layer deposited on said semiconductor film layer by said ionized-cluster-beam deposition process, said second metallic film layer and said semiconductor film layer forming a Schottky barrier at the boundary therebetween; a current-collecting metallic-board-side terminal electrode provided on one portion of said second metallic film; and a reflection preventative film layer provided on another portion of said second metallic film; whereby said Schottky solid state element can be folded or rolled into a compact size.