US3279962A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semi-conductor devices using cadmium sulphide semi-conductors
Assignee: US Philips Corp
•
Filing: 1963-03-22
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Granted: 1966-10-18
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Expires: 1983-03-22
Abstract
No abstract record available.
Inventors
- 👤 Grimmeiss Hermann George
- 👤 Memming Rudiger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:52
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F99/00; C; C30; C30B; C30B31/00; C30B31/06; H10D; H10D62/00; H10D62/80; H10D62/86; H10D62/864; H10F71/00; H10F71/128; H10P; H10P10/00; H10P95/00; H10P95/80
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
136 words
A METHOD OF MAKING A BARIER-LAYER SEMICONDUCTOR DEVICE COMPRISING PROVIDING A CADMIUM SULPHIDE SEMICONDUCTIVE BODY, PROVIDING ON A SURFACE PORTION OF SAID BODY OF N-TYPE CONDUCTIVITY A LAYER OF AN ACCEPTOR IMPURITY, PROVIDING A SOURCE OF OXYGEN-CONTAINING GAS AND HEATING MEANS AND COOLING MEANS FOR THE GAS, DIRECTING A STREAM OF OXYGEN-CONTAINING GAS FROM THE SOURCE THROUGH THE HEATING MEANS AND BLOWING THE REUSLTANT HEATED GAS ONTO THE SURFACE PORTION OF THE SEMICONDUCTIVE BODY CNTAINING THE ACCEPTOR IMPUIRTY TO DIFFUSE THE SAID IMPURITY INTO THE SAID SURFACE PORTION OF THE BODY IN THE PRESENCE OF THE OXYEN TO ALTER AN ELECTRICAL PROPERTY THEREOF, AND THEREAFTER DIRECTINGTHESTREAM OF OXYGEN-CONTAINING GASTHROUGH THE COOLINGMEANS AND BLOWING THE RESULTANT COOLED GAS ONTO THE SAME SAID SURFACD PORTION OF THE BODY TO RAPIDLY COOL SAME AND PRESERVE THE ALTERED ELECTRICAL PROPERTY.
Claim 2
Independent Claim
136 words
A METHOD OF MAKING A BARIER-LAYER SEMICONDUCTOR DEVICE COMPRISING PROVIDING A CADMIUM SULPHIDE SEMICONDUCTIVE BODY, PROVIDING ON A SURFACE PORTION OF SAID BODY OF N-TYPE CONDUCTIVITY A LAYER OF AN ACCEPTOR IMPURITY, PROVIDING A SOURCE OF OXYGEN-CONTAINING GAS AND HEATING MEANS AND COOLING MEANS FOR THE GAS, DIRECTING A STREAM OF OXYGEN-CONTAINING GAS FROM THE SOURCE THROUGH THE HEATING MEANS AND BLOWING THE REUSLTANT HEATED GAS ONTO THE SURFACE PORTION OF THE SEMICONDUCTIVE BODY CNTAINING THE ACCEPTOR IMPUIRTY TO DIFFUSE THE SAID IMPURITY INTO THE SAID SURFACE PORTION OF THE BODY IN THE PRESENCE OF THE OXYEN TO ALTER AN ELECTRICAL PROPERTY THEREOF, AND THEREAFTER DIRECTINGTHESTREAM OF OXYGEN-CONTAINING GASTHROUGH THE COOLINGMEANS AND BLOWING THE RESULTANT COOLED GAS ONTO THE SAME SAID SURFACD PORTION OF THE BODY TO RAPIDLY COOL SAME AND PRESERVE THE ALTERED ELECTRICAL PROPERTY.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-10-17 | 1970-04-18 | 1970-10-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-10-17 | 1974-04-18 | 1974-10-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-10-17 | 1978-04-18 | 1978-10-18 | $7700.00 | Window Closed / Lapsed |