Inverted solid state diode
Abstract
Abstract THIS INVENTION RELATES TO A METHOD OF PRODUCING AN INVERTED THIN FILM SOLID STATE DEVICE, I.E., A SOLID STATE DEVICE IN WHICH A SEMICONDUCTIVE FILM IS DEPOSITED ON A HIGH WORK FUNCTIONAL METAL. THE INVERTED SOLID STATE DEVICE IS PRODUCED BY APPLYING A FILM OF HIGH WORK FUNCTION METAL TO A SURFACE AND THEN COOLING THE METAL BELOW ROOM TEMPERATURE WHILE A THIN FILM OF SULFUR IS DEPOSITED ON THE SURFACE OF THE METAL. A THIN LAYER OF CADMIUM SULFIDE IS DEPOSITED ON THE SULFUR TO PREVENT EVAPORATION, THE TEMPERATURE IS RAISED, AND THE DEPOSITION OF THE CADMIUM SULFIDE IS COMPLETED. DEPOSITION OF A THIN FILM OF LOW WORK FUNCTION METAL ON THE CADMIUM SULFIDE COMPLETES THE INVERTED SOLID STATE DEVICE.
Inventors
- 👤 John A Scott-Monck
- 👤 Arthur J Learn
Bibliographic Details
Claims Analysis
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1974-08-02 | 1975-02-01 | 1975-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-08-02 | 1979-02-01 | 1979-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-08-02 | 1983-02-01 | 1983-08-03 | $7700.00 | Window Closed / Lapsed |