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US4707197A
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Method of producing a silicide/Si heteroepitaxial structure, and articles produced by the method
Assignee: Nokia Bell Labs
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Filing: 1986-01-17
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Granted: 1987-11-17
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Expires: 2006-01-17
Abstract
Abstract Described is a method for producing metal silicide/silicon heterostructures. The method comprises depositing a very thin Si "template" layer on a relatively cold (<200° C.) silicide substrate, raising the substrate temperature into the approximate range 500°-800° C. and maintaining it there while depositing further Si onto the template. The resulting Si layer can be of high crystalline perfection. The silicide advantageously is CoSi 2 , Co x Ni 1-x Si 2 , CoSi y Ge 2-y , or NiSi 2 , with 0<x<1,1<y<2.
Inventors
- 👤 John C. Hensel
- 👤 Anthony F. J. Levi
- 👤 Raymond T. Tung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:15
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2923; H10P14/2902; H10P14/2905; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3466; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/072; Y10S148/147
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
129 words
Method of forming a metal silicide/silicon heterostructure comprising a layer of silicon grown on a single crystal metal silicide substrate, the Si layer having a thickness t, the method comprising: (a) depositing a first layer of silicon onto the silicide substrate, the first layer thickness t 1 being less than t, the substrate being at a template deposition temperature below about 300° C.; (b) raising the temperature of the substrate with the first layer of silicon thereon to a bulk deposition temperature between about 500 degrees C. and about 800 degrees C.; and (c) depositing silicon onto the first silicon layer, the substrate being maintained substantially at the bulk deposition temperature, the amount of silicon deposited being the amount required to result in a Si layer of thickness t.
Claim 2
Dependent Claim
129 words
Method of forming a metal silicide/silicon heterostructure comprising a layer of silicon grown on a single crystal metal silicide substrate, the Si layer having a thickness t, the method comprising: (a) depositing a first layer of silicon onto the silicide substrate, the first layer thickness t 1 being less than t, the substrate being at a template deposition temperature below about 300° C.; (b) raising the temperature of the substrate with the first layer of silicon thereon to a bulk deposition temperature between about 500 degrees C. and about 800 degrees C.; and (c) depositing silicon onto the first silicon layer, the substrate being maintained substantially at the bulk deposition temperature, the amount of silicon deposited being the amount required to result in a Si layer of thickness t.
Claim 3
Dependent Claim
65 words
Method of claim 1, wherein the metal silicide is selected from the group consisting of CoSi 2 , Co x Ni 1-x Si 2 , with 0<x<1, CoSi y Ge 2-y , with 1<y<2, and NiSi 2 , the template deposition temperature is less than about 200 degrees C., and the bulk deposition temperature is between about 500 degrees C. and about 700 degrees C.
Claim 4
Dependent Claim
9 words
Method of claim 1, wherein t 1 <100 Å.
Claim 5
Dependent Claim
35 words
Method of claim 3, wherein the metal silicide is selected from the group consisting of CoSi 2 , NiSi 2 Co x Ni 1-x Si 2 , x≧0.5, and CoSi y Ge 2-y , y≧1.5.
Claim 6
Dependent Claim
25 words
Method of claim 1, wherein step (b) comprises maintaining the substrate at an intermediate temperature between the template deposition temperature and the bulk deposition temperature.
Claim 7
Dependent Claim
17 words
Method of claim 1, wherein the metal silicide/silicon heterostructure is at least part of an electronic device.
Claim 8
Dependent Claim
26 words
Method of claim 1, wherein the metal silicide/silicon heterostructure is at least part of a composite heteroepitaxial structure of alternating layers of silicon and metal silicide.
Claim 9
Dependent Claim
22 words
Method of claim 7, wherein the composite heteroepitaxial structure is at least part of an electronic device or of an optical device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-16 | 1991-05-18 | 1991-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-16 | 1995-05-18 | 1995-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-16 | 1999-05-18 | 1999-11-17 | $7700.00 | Window Closed / Lapsed |