Fabrication of insulated gate gallium arsenide FET with self-aligned source/drain and submicron channel length

Claim 2

Method for forming an insulated GaAs-gate FET having submicron channel length comprising: (a) providing a GaAs substrate having layers of AlGaAs and doped GaAs thereon; (b) forming a submicron dimensioned conductor contacting said doped GaAs layer; (c) forming, by anisotropic etching, using said conductor as a mask, a GaAs gate of submicron width from said doped GaAs layer, said conductor serving as self-aligned contact to said gate; (d) establishing submicron-wide insulator sidewalls to the GaAs gate and its associated contact structure; and (e) ion implanting to form source and drain in said substrate, said source and drain being self-aligned to said gate and the AlGaAs beneath the gate serving as the gate insulator.

Claim 3

The method as recited in claim 1 wherein said step (b) comprises: (p) forming a strip of an organic material having substantially vertical walls on said doped GaAs layer; (q) forming a conformal submicron thickness layer of a conductive material; (r) anisotropically etching said conductive material to form a controlled submicron thickness layer of said conductive material on said walls of said strip; (s) applying a thick layer of an organic material to the resulting structure to obtain a planarized structure; and (t) uniformly etching back the upper portions of said thick layer, said strip of organic material and said conductive material on said walls.

Claim 4

The method as recited in claim 2 wherein said step (t) is accomplished until said conductor is provided with substantially vertical walls.

Claim 5

The method as recited in claim 1 wherein said step (d) comprises: depositing a submicron thickness insulator layer on the structure resulting at the completion of step (c); and anisotropically etching said submicron thickness insulator layer to leave controlled submicron thickness insulator layer on the walls of said gate and said contact.

Claim 6

The method as recited in claim 4 further comprising following said ion implantation step, annealing to remove any damage caused to the GaAs substrate by said ion implantation and to activate the implanted ions.

Claim 7

The method as recited in claim 2 wherein the thickness of said conformal layer of conductive material is in the range of about 0.3-0.4 μm.

Claim 8

The method as recited in claim 4 wherein the thickness of said submicron thickness insulator layer is in the range of about 0.1-0.3 μm.

Claim 9

The method as recited in claim 6 wherein said conductor material is a refractory metal.

Claim 10

The method as recited in claim 7 wherein said insulator is SiO x .

Claim 11

A process for forming an insulated GaAs-gate field effect transistor (FET) having submicrometer channel length comprising: providing a GaAs substrate having a relatively thin layer of AlGaAs thereon and a relatively thick doped GaAs layer on said AlGaAs layer; forming a conductive strip having submicrometer width and thickness dimensions on said doped GaAs layer, the width of said strip corresponding to the channel length of said FET; etching said doped GaAs layer using said strip as a mask to form a GaAs gate having substantially vertical walls and width identically matching with the width of said strip, said strip serving as a self-aligned conductive contact to said gate; forming a controlled submicrometer thickness layer on the vertical walls of said gate and said contact; and forming source and drain regions in said substrate using the said gate and said layer on said walls of said gate and said contact as a mask in a self-aligned relationship with said gate.

Claim 12

A process for forming an insulated GaAs-gate field effect transistor (FET) having submicrometer channel length comprising: providing a GaAs substrate having a relatively thin layer of AlGaAs thereon and a relatively thick doped GaAs layer on said AlGaAs layer; forming a conductive strip having submicrometer width and thickness dimensions on said doped GaAs layer, the width of said strip corresponding to the channel length of said FET; etching said doped GaAs layer using said strip as a mask to form a GaAs gate having substantially vertical walls and width identically matching with the width of said strip, said strip serving as a self-aligned conductive contact to said gate; forming a controlled submicrometer thickness layer on the vertical walls of said gate and said contact; and forming source and drain regions in said substrate using the said gate and said layer on said walls of said gate and said contact as a mask in a self-aligned relationship with said gate.

Claim 13

The process as recited in claim 10 wherein said gate width is about 0.3-0.5 μm.

Claim 14

The process as recited in claim 11 wherein the thickness of said layer on the vertical walls of said gate and said contact is such as to minimize the source/drain resistance and gate-source overlap capacitance of the FET.

Claim 15

The process as recited in claim 12 wherein the thickness of said layer on the vertical walls of said gate and said contact is about 0.1-0.3 μm.

Claim 16

The process as recited in claim 10 wherein the step of forming a conductive strip comprises: forming a first removable layer having a substantially vertical surface on said doped GaAs layer; forming a controlled submicrometer thickness conductive layer on the vertical surface of said first removable layer; coating the resulting structure with a thick second removable layer thereby obtaining a planarized structure composed of said first and second removable layers and said conductive layer; uniformly etching back the planarized structure to remove the upper portions of said first and second removable layers and conductive layer, thereby transforming said conductive layer into said strip embedded in said first and second removable layers remaining at the completion of the present etchback step; removing said remaining first and second removable layers.

Claim 17

The process as recited in claim 14 wherein said first removable material is either photoresist or polyimide.

Claim 18

The process as recited in claim 14 wherein said second removable material is either photoresist or polyimide.

Claim 19

The process as recited in claim 14 wherein said conductive material is a refractory metal or a refractory metal alloy.

Claim 20

The process as recited in claim 10 wherein said submicrometer thickness layer is composed of an insulator material.

Claim 21

The process as recited in claim 18 wherein said step of forming said layer on the vertical walls of said gate and said contact comprises: depositing a conformal layer of said insulative material; and anisotropically etching said conformal layer to remove said conformal layer from everywhere except from said vertical walls of said gate and said contact.

Claim 22

Process for fabricating semiconductor integrated circuit having at least a field effect transistor device having a narrow gate comprising: providing a semi-insulating GaAs substrate having a gate insulating layer of AlGaAs thereon and a thicker highly doped GaAs layer on said AlGaAs layer; forming a layer of an organic material having substantially vertical surfaces and a substantially horizontal surface on said doped GaAs layer; forming a conformal submicron thickness conductive layer on said organic layer and said doped GaAs layer not masked by said organic layer; anisotropically etching said conformal conductive layer to remove said conductive layer from horizontal surfaces and leave said conductive layer on said substantially vertical surfaces; removing the undesired portions of said conductive layer on said vertical surfaces; applying a thick removable layer on the resulting structure thereby obtaining a planarized structure composed of said thick removable layer, said layer of organic material and conductive layer on selected portions of said vertical surfaces; uniformly etching back said planarized structure to transform said conductive layer on selected portions of said vertical surfaces into a conductive strip of submicron thickness and width while simultaneously removing the upper surface portions of said removable layer and said layer of organic material; using said conductive strip as a mask, etching to transform said doped GaAs layer into a GaAs gate having a width identical to that of said strip, said strip serving as self-aligned contact to said gate, said gate and said contact having substantially vertical sidewalls; forming a controlled submicron thick insulative layer on the said sidewalls of said gate and contact; and forming source and drain regions in said substrate by ion implantation through said AlGaAs layer using said gate in combination with said sidewalls as a mask, said source and drain being self-aligned to said gate.

Claim 23

Process for fabricating semiconductor integrated circuit having at least a field effect transistor device having a narrow gate comprising: providing a semi-insulating GaAs substrate having a gate insulating layer of AlGaAs thereon and a thicker highly doped GaAs layer on said AlGaAs layer; forming a layer of an organic material having substantially vertical surfaces and a substantially horizontal surface on said doped GaAs layer; forming a conformal submicron thickness conductive layer on said organic layer and said doped GaAs layer not masked by said organic layer; anisotropically etching said conformal conductive layer to remove said conductive layer from horizontal surfaces and leave said conductive layer on said substantially vertical surfaces; removing the undesired portions of said conductive layer on said vertical surfaces; applying a thick removable layer on the resulting structure thereby obtaining a planarized structure composed of said thick removable layer, said layer of organic material and conductive layer on selected portions of said vertical surfaces; uniformly etching back said planarized structure to transform said conductive layer on selected portions of said vertical surfaces into a conductive strip of submicron thickness and width while simultaneously removing the upper surface portions of said removable layer and said layer of organic material; using said conductive strip as a mask, etching to transform said doped GaAs layer into a GaAs gate having a width identical to that of said strip, said strip serving as self-aligned contact to said gate, said gate and said contact having substantially vertical sidewalls; forming a controlled submicron thick insulative layer on the said sidewalls of said gate and contact; and forming source and drain regions in said substrate by ion implantation through said AlGaAs layer using said gate in combination with said sidewalls as a mask, said source and drain being self-aligned to said gate.

Claim 24

The process as recited in claim 20 wherein said organic layer forming step comprises: applying a layer of photoresist to said doped GaAs layer; depositing a Si x N y layer on said photoresist; patterning, by photolithography and etching, said Si x N y layer into a desired pattern; and using the patterned Si x N y layer as a mask, etching said photoresist.

Claim 25

The process as recited in claim 21 wherein said removable layer is photoresist or polyimide.

Claim 26

The process as recited in claim 22 wherein said conductive layer is composed of a refractory metal or a refractory metal alloy.

Claim 27

The process as recited in claim 23 wherein said step of etching back of said planarized structure comprises: reactive ion etching in oxygen plasma utilizing said Si x N y layer as an etch stop; and reactive ion etching in CF 4 plasma for a predetermined period of time to obtain said strip of submicron thickness.

Claim 28

The process as recited in claim 24 wherein said source and drain regions are formed by implantation of silicon (Si + ) ions.

Claim 29

The process as recited in claim 25 further comprising after said ion implantation step annealing the resulting structure by subjecting to either a halogen lamp or an infrared lamp at a temperature of 700°-800° C. for a few seconds.

Claim 30

The process as recited in claim 25 further comprising establishing conductive contacts with said source and drain regions.

Claim 31

The process as recited in claim 27 wherein said conductive contact material is gold-germanium-nickel alloy.

Claim 32

The process as recited in claim 27 wherein said AlGaAs layer thickness is in the range of about 200-300 Å.

Claim 33

The process as in claim 28 wherein said contacts are formed by lift-off process.