US4645563A
Expired / Lapsed
US
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Method of manufacturing GaAs field effect transistor
Assignee: Toshiba Corp
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Filing: 1985-07-17
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Granted: 1987-02-24
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Expires: 2005-07-17
Abstract
Abstract A method of manufacturing of a GaAs FET wherein a gate structure is first formed on a GaAs substrate. The gate structure consists of a conductive gate layer and an insulative layer, which are in lateral contact with each other on the substrate. Each layer is isotropically deposited by a CVD process and later anisotropically etched using a RIE process, whereby it has a specific width of the submicron order reduced to an extent substantially equal to an initially deposited thickness thereof. The high frequency property of the GaAs FET can be improved due to the decrease in width of the gate layer. Ion implantation is performed with the gate structure used as a mask to provide in the substrate source and drain regions which are self-aligned with the gate structure. The drain regions are removed from the gate layer at a distance equal to the width of the insulative layer.
Inventors
- 👤 Toshiyuki Terada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 02:36
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D30/0616; H10D30/80; H10D30/87; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10D64/0125; H10D64/0126; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01326; H10D64/0133; H10P; H10P76/00; H10P76/40; H10P76/408; H10P76/4085
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
139 words
A method for manufacturing a GaAs field effect transistor, comprising the steps of: forming, on a gallium arsenide substrate involving an operational layer, a gate structure comprising a first layer which is conductive to serve as a gate layer of said transistor and a second layer which is insulative, each of said first and second layers being isotropically deposited and anisotropically etched and made to have a width substantially equal to an initial thickness with which it was initially deposited; and performing ion implantation with said gate structure used as a mask to provide in said substrate source and drain regions which are self-aligned with said gate structure, said source region being set adjacent to said gate layer, and said drain region being removed from the gate layer at a distance equal to the width of the insulative layer.
Claim 2
Independent Claim
139 words
A method for manufacturing a GaAs field effect transistor, comprising the steps of: forming, on a gallium arsenide substrate involving an operational layer, a gate structure comprising a first layer which is conductive to serve as a gate layer of said transistor and a second layer which is insulative, each of said first and second layers being isotropically deposited and anisotropically etched and made to have a width substantially equal to an initial thickness with which it was initially deposited; and performing ion implantation with said gate structure used as a mask to provide in said substrate source and drain regions which are self-aligned with said gate structure, said source region being set adjacent to said gate layer, and said drain region being removed from the gate layer at a distance equal to the width of the insulative layer.
Claim 3
Dependent Claim
107 words
The method according to claim 1, wherein said step of forming said first layer comprises: forming an insulation layer on said substrate with the side wall substantially set upright; uniformly depositing a conductive layer on said substrate and said insulation layer by a process so selected as to cause the deposition to proceed isotropically; anisotropically etching said conductive layer, thereby providing a conductive layer component which is in lateral contact with the vertical side wall of said insulation layer; and removing said insulation layer having said vertical side wall, thereby causing a conductive layer component having a substantially vertical side wall to be retained on said substrate.
Claim 4
Dependent Claim
89 words
The method according to claim 2, wherein said step of forming said second layer comprises: uniformly depositing an insulative layer on said substrate and conductive layer component by processes selected so as to cause the deposition to proceed isotropically etching said insulative layer, thereby providing an insulative layer component set adjacent to the substantially vertical side wall of said conductive layer component; and anisotropically etching said insulative layer, thereby providing an insulative layer component which is in lateral contact with the vertical side wall of said conductive layer component.
Claim 5
Dependent Claim
46 words
The method according to claim 2, wherein said conductive layer is isotropically formed by a chemical vapor deposition technique, and is later subjected to reactive ion etching, thereby causing said conductive layer component to have a thickness substantially equal to that of the deposited conductive layer.
Claim 6
Dependent Claim
45 words
The method according to claim 4, wherein said insulative layer is isotropically formed by the chemical vapor deposition technique and later processed by reactive ion etching, thereby causing said insulative layer component to have a width substantially equal to that of the deposited insulative layer.
Claim 7
Dependent Claim
94 words
The method according to claim 1, wherein said step of forming said second layer comprises: forming a third layer having a substantially vertical side wall on said substrate; uniformly depositing an insulative layer on said substrate and said third layer by a process selected so as to cause the deposition to proceed isotropically; anisotropically etching said insulative layer, thereby providing an insulative layer component set adjacent to the side wall of said third layer; and removing said third layer, thereby retaining an insulative layer component having a substantially vertical side wall on said substrate.
Claim 8
Dependent Claim
66 words
The method according to claim 6, wherein said step of forming said first layer comprises: uniformly depositing a conductive layer on said substrate and insulative layer component by a process selected so as to cause the deposition to proceed isotropically; and anisotropically etching said conductive layer, thereby providing a conductive layer component which is in lateral contact with the side wall of said insulative layer component.
Claim 9
Dependent Claim
44 words
The method according to claim 7, wherein said insulative layer is isotropically formed by a chemical deposition technique and later subjected to reactive ion etching, thereby causing said insulative layer component to have a thickness substantially equal to that of the deposited insulative layer.
Claim 10
Dependent Claim
45 words
The method according to claim 8, wherein said conductive layer is isotropically formed by the chemical vapor deposition technique, and later subjected to reactive ion etching, thereby causing said conductive layer component to have a width substantially equal to that of said deposited conductive layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-02-23 | 1990-08-25 | 1991-02-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-23 | 1994-08-25 | 1995-02-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-02-23 | 1998-08-25 | 1999-02-24 | $7700.00 | Window Closed / Lapsed |