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US4681640A
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Laser-induced chemical vapor deposition of germanium and doped-germanium films
Assignee: United States Department of the Army
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Filing: 1986-08-06
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Granted: 1987-07-21
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Expires: 2006-08-06
Abstract
Abstract Germanium and doped-germanium polycrystalline films are formed using photolytic CO2 laser-induced chemical vapor deposition method. Germanium being transparent to IR light makes the production of high purity polycrystalline germanium and doped-germanium films from starting compounds of germane, ethylgermane diethylgermane, and triethylgermane ideally adapted to the laser induced infrared radiation provided by the tunable, continuous-wave CO2 laser which delivers infrared laser radiation in the range of 10.4 or 9.4 micrometers. Triethylgermane produces germanium in a quantity usable as a dopant. Scanning electron microscopy is used for analysis of the films. The products identified on irradiation of germane are germanium and hydrogen. Conversion rates on the order of 86% are readily obtained. On irradiation of diethylgermane and ethylgermane, ethylene, germane, germanium and hydrogen are produced. Germanium films doped with cadmium and aluminum are successfully produced by the irradiation of germane mixtures containing dimethylcadmium or trimethylaluminum, respectively. A starting material such as tetramethylgermane (TMG) which has a high vapor pressure, e.g. >70 torr and which does not have a frequency of vibration resonant with the output of the CO2 laser, is usable in the presence of a sensitizer, i.e., a substance is employed with tetramethylgermane which absorbs the energy and then subsequently reacts with a transfer energy to the TMG.
Inventors
- 👤 Ann E. Stanley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:22
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/44; C23C16/48; C23C16/483; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3444; Y; Y10; Y10S; Y10S148/00; Y10S148/093; Y10S148/094; Y10S438/00; Y10S438/903
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
209 words
A method for infrared laser-induced chemical vapor deposition of polycrystalline germanium and doped-germanium films wherein in said method as said deposition increases in amount the rate of said deposition does not decrease because of the transparency of said deposited polycrystalline germanium or doped-germanium films to the output frequencies of the infrared laser inducing said deposition, said method comprising: i. placing a prepared substrate into one or more laser reaction cells; ii. filling one or more laser reaction cells with one or more compounds selected from germane, ethylgermane, diethylgermane, triethylgermane, tetramethylgermane, dimethylcadmium, and trimethylaluminum to a predetermined pressure from about 3.5 to about 220 torr; iii. irradiating said compound with infrared laser radiation in the range of 10.4 or 9.4 micrometer as provided by a continuous-wave CO 2 laser whose single-line operation is varied in output powers between 10 and 150 watts/cm 2 ; iv. continuing said irradiating for a predetermined time period from about 15 seconds to about one minute to effect laser photochemical dissociation of said compound contained in said laser reaction cell; and, v. repeating said irradiating for an additional predetermined time period from about 15 seconds to about one minute as required to achieve said infrared laser-induced chemical vapor deposition of polycrystalline germanium or doped-germanium films.
Claim 2
Independent Claim
209 words
A method for infrared laser-induced chemical vapor deposition of polycrystalline germanium and doped-germanium films wherein in said method as said deposition increases in amount the rate of said deposition does not decrease because of the transparency of said deposited polycrystalline germanium or doped-germanium films to the output frequencies of the infrared laser inducing said deposition, said method comprising: i. placing a prepared substrate into one or more laser reaction cells; ii. filling one or more laser reaction cells with one or more compounds selected from germane, ethylgermane, diethylgermane, triethylgermane, tetramethylgermane, dimethylcadmium, and trimethylaluminum to a predetermined pressure from about 3.5 to about 220 torr; iii. irradiating said compound with infrared laser radiation in the range of 10.4 or 9.4 micrometer as provided by a continuous-wave CO 2 laser whose single-line operation is varied in output powers between 10 and 150 watts/cm 2 ; iv. continuing said irradiating for a predetermined time period from about 15 seconds to about one minute to effect laser photochemical dissociation of said compound contained in said laser reaction cell; and, v. repeating said irradiating for an additional predetermined time period from about 15 seconds to about one minute as required to achieve said infrared laser-induced chemical vapor deposition of polycrystalline germanium or doped-germanium films.
Claim 3
Dependent Claim
75 words
The method of claim 1 wherein said compound irradiated in said laser reaction cell is germane, said predetermined pressure is about 200 torr, said output power is about 100 watts/cm 2 , said irradiation time is for about 30 seconds, said irradiating is by the P(30) of (00°1)-(10°0), 935 cm -1 , and wherein said film deposited on said substrate as determined with anlysis by electron scanning microscope in the x-ray mode is 100% germanium.
Claim 4
Dependent Claim
71 words
The method of claim 1 wherein said compound irradiated in said laser reaction cell is about 80 torr, said output power is about 100 watts/cm 2 , said irradiation time is for about 30 seconds, said irradiating is by the R(26) of (00°1)-(10°0), 980 cm -1 , and wherein said film deposited on said substrate as determined with anlysis by electron scanning microscope in the x-ray mode is germanium and hydrogen.
Claim 5
Dependent Claim
75 words
The method of claim 1 wherein said compound irradiated in said laser reaction cell is diethylgermane, said predetermined pressure is about 40 torr, said output power is about 100 watts/cm 2 , said irradiation time is for about 15 seconds, said irradiating is by the R(14) of (00°1)-(10°0), 1075 cm -1 , and wherein said film deposited on said substrate as determined with anlysis by electron scanning microscope in the x-ray mode is 100% germanium.
Claim 6
Dependent Claim
63 words
The method of claim 1 wherein said compound irradiated in said laser reaction cell is triethygermane, said predetermined pressure is about 3.5 torr, said output power is about 100 watts/cm 2 , said irradiation time is for about 15 seconds, said irradiating is by the R(14) of (00°1)-(02°0), 1075 cm -1 , and wherein said laser-induced polycrystalline germanium is deposited on said substrate.
Claim 7
Dependent Claim
137 words
The method of claim 1 wherein said compound irradiated in said laser reaction cell is diethylgermane in mixture with diethyl ether, said predetermined pressure is about 130 torr, said output power is about 35 watts/cm 2 , and said irradiation time is for about 30 seconds, for a first irradiation, a repeat irradiation is at a power of about 65 watts/cm 2 and a repeat irradiation time is for about 30 seconds, a second repeat irradiation is at a power of about 50 watts/cm 2 and a second repeat irradiation time is about 30 seconds, said irradiating is by the P(34) of (00°1)-(10°0), 93 cm -1 , and wherein said diethyl ether functions as a sensitizer to effectively transfer absorbed energy to said diethylgermane to effect dissociation thereof to yield germanium as identified by its infrared frequencies.
Claim 8
Dependent Claim
137 words
The method of claim 1 wherein said compound irradiated in said laser reaction cell is triethylgermane in mixture with diethyl ether, said predetermined pressure is about 20 torr, said output power is about 100 watts/cm 2 , and said irradiation time is for about 15 seconds, for a first irradiation, a repeat irradiation is at a power of about 65 watts/cm 2 and a repeat irradiation time is for about 30 seconds, a second repeat irradiation is at a power of about 50 watts/cm 2 and a second repeat irradiation time is about 30 seconds, said irradiating is by the R(14) of (00°1)-(02°0), 1075 cm -1 , and wherein said diethyl ether functions as a sensitizer to effectively transfer absorbed energy to said triethylgermane to effect dissociation thereof to yield germanium as identified by its infrared frequencies.
Claim 9
Dependent Claim
88 words
The method of claim 1 wherein said compound irradiated in said laser reaction cell is tetraethylgermane in said mixture with NOCl, said predetermined pressure is about 70 torr each, said output power is about 75 watts/cm 2 , and said irradiation time is for about 30 seconds, said irradiating is by the P(34) of (00°1)-(10°0), 931 cm -1 , and wherein said NOCl functions as a sensitizer to effectively transfer absorbed energy to said tetraethylgermane to effect dissociation thereof to yield germanium as identified by its infrared frequency.
Claim 10
Dependent Claim
114 words
The method of claim 1 wherein two of said compounds are irradiated in said laser reaction cell, namely: dimethylcadmium and germane, to achieve a codeposit of cadmium and germanium on said substrate, said predetermined pressure of said dimethylcadmium being about 25 torr and said predetermined pressure of germane being about 75 torr, said output power is about 100 watts/cm 2 , said irradiation time is for about 30 seconds, said irradiating is by the P(26) of (00°1)-(10°0), 939 cm -1 , and wherein said film is a doped-ermanium film deposited on said substrate, and as determined with analysis by electron scanning microscope in the x-ray mode, is about 73% germanium and about 27% cadmium.
Claim 11
Dependent Claim
79 words
The method of claim 1 wherein two compunds are irradiated in said laser reaction cell namely: trimethylaluminum and germane, to achieve a codeposit of aluminum and germanium on said substrate, said predetermined pressure of said trimethylaluminum being about 12.5 torr and said predetermined pressure of germane being about 112 torr, said output power is about 100 watts/cm 2 , said irradiation time is for about 30 seconds, said irradiating is by the P(26) of (00°1)-(10°0), 939 cm -1 .
Claim 12
Independent Claim
265 words
A method for infrared laser-induced chemical vapor deposition of polycrystalline germanium and doped-germanium films wherein in said method as said deposition increases in amount the rate of said deposition does not decrease because of the transparency of said deposited polycrystalline germanium or doped-germanium films to the output frequencies of the infrared laser inducing said deposition, said method comprising: i. placing a prepared substrate into one or more laser reaction cells; ii. filling one or more laser reaction cells with a sensitizer of SF 6 to a predetermined pressure from about 5 to about 20 torr and with one or more compounds selected from germane, ethylgermane, diethylgermane, triethylgermane, tetramethylgermane, dimethylcadmium, and trimethylaluminum to a predetermined pressure from about 3.5 to about 220 torr; iii. irradiating said one or more compounds in mixture with said sensitizer with infrared laser radiation in the range of 10.4 or 9.4 micrometer as provided by a continuous-wave CO 2 laser whose single-line operation is varied in output powers between 10 and 150 watts/cm 2 ; iv. continuing said irradiating for a predetermined time period from about 5 seconds to about one minute to effect laser photochemical dissociation of said compound wherein said sensitizer of SF 6 effectively transfers absorbed energy to said one or more compounds contained in said laser reaction cell to effect dissociation of said one or more compounds to yield germanium or doped-germanium; and, v. repeating said irradiating for an additional predetermined time period from about 5 seconds to about one minute as required to achieve said infrared laser-induced chemical vapor deposition of polycrystalline germanium or doped-germanium films.
Claim 13
Independent Claim
265 words
A method for infrared laser-induced chemical vapor deposition of polycrystalline germanium and doped-germanium films wherein in said method as said deposition increases in amount the rate of said deposition does not decrease because of the transparency of said deposited polycrystalline germanium or doped-germanium films to the output frequencies of the infrared laser inducing said deposition, said method comprising: i. placing a prepared substrate into one or more laser reaction cells; ii. filling one or more laser reaction cells with a sensitizer of SF 6 to a predetermined pressure from about 5 to about 20 torr and with one or more compounds selected from germane, ethylgermane, diethylgermane, triethylgermane, tetramethylgermane, dimethylcadmium, and trimethylaluminum to a predetermined pressure from about 3.5 to about 220 torr; iii. irradiating said one or more compounds in mixture with said sensitizer with infrared laser radiation in the range of 10.4 or 9.4 micrometer as provided by a continuous-wave CO 2 laser whose single-line operation is varied in output powers between 10 and 150 watts/cm 2 ; iv. continuing said irradiating for a predetermined time period from about 5 seconds to about one minute to effect laser photochemical dissociation of said compound wherein said sensitizer of SF 6 effectively transfers absorbed energy to said one or more compounds contained in said laser reaction cell to effect dissociation of said one or more compounds to yield germanium or doped-germanium; and, v. repeating said irradiating for an additional predetermined time period from about 5 seconds to about one minute as required to achieve said infrared laser-induced chemical vapor deposition of polycrystalline germanium or doped-germanium films.
Claim 14
Dependent Claim
93 words
The method of claim 11 wherein said compound irradiated in said laser reaction cell is germane in mixture with SF 6 , said predetermined pressure is about 200 torr for said germane with a predetermined pressure of about 5 torr for said SF 6 , said output power is about 50 watts/cm 2 , and said irradiation time is for about 5 seconds, and wherein said SF 6 functions as a sensitizer to effectively transfer absorbed energy to said germane to effect dissociation thereof to yield germanium as identified by its infrared frequencies.
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