US4524090A
Expired / Lapsed
US
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Deposition of compounds from multi-component organo-metals
Assignee: United States Department of the Navy
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Filing: 1984-04-30
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Granted: 1985-06-18
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Expires: 2004-04-30
Abstract
Abstract A method of preparing films having the formula A IIB B VIA wherein A IIB is a group IIB metal and B VIA is a chalcogenide by the photolysis or low temperature thermolysis of an organo-metallic compound containing the targeted A IIB B VIA elements is provided. Organo-metallic compounds utilized in the method are of the general formulas R-X-M-X-R', R-M-X-M-R', R-M-X-R', R-M-CH 2 -X-R', R-M-X-X-R' wherein R and R' are hydrogen, an alkyl, an aryl or an organic radical containing a heteroatom, M is a group IIB metal and X is a chalcogenide. Photolysis is carried out with an ultraviolet, visible or infrared light source. The films are useful in the manufacture of semiconductor elements and optical coatings.
Inventors
- 👤 Nicholas Bottka
- 👤 Robert W. Schwartz
- 👤 Wayne E. Thun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:25
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/305; C23C16/306
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
124 words
A method of depositing a film having the formula A IIB B VIA , wherein A IIB is a group IIB metal and B VIA is a chalcogenide selected from the group consisting of S, Se and Te, upon a target surface comprising the steps of: exposing said surface to an environment containing a photolytically decomposable organo-metallic compound, said compound selected from the group consisting of R-X-M-X-R', R-M-X-M-R', R-M-X-R', R-M-CH 2 -X-R' and R-M-X-X-R' wherein: R and R' are each selected from the group consisting of hydrogen, an alkyl, an aryl and an organic radical containing a heteroatom; M is a group IIB metal; and X is a chalcogenide; and photolytically decomposing said organo-metallic compound to effect deposition of said film upon said surface.
Claim 2
Independent Claim
124 words
A method of depositing a film having the formula A IIB B VIA , wherein A IIB is a group IIB metal and B VIA is a chalcogenide selected from the group consisting of S, Se and Te, upon a target surface comprising the steps of: exposing said surface to an environment containing a photolytically decomposable organo-metallic compound, said compound selected from the group consisting of R-X-M-X-R', R-M-X-M-R', R-M-X-R', R-M-CH 2 -X-R' and R-M-X-X-R' wherein: R and R' are each selected from the group consisting of hydrogen, an alkyl, an aryl and an organic radical containing a heteroatom; M is a group IIB metal; and X is a chalcogenide; and photolytically decomposing said organo-metallic compound to effect deposition of said film upon said surface.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein said organo-metallic compound is the compound Ph-Hg-Se-Ph and the deposited film has the formula HgSe.
Claim 4
Dependent Claim
21 words
The method of claim 1 wherein said organo-metallic compound is the compound Ph-Hg-Te-Ph and the deposited film has the formula HgTe.
Claim 5
Independent Claim
131 words
A method of depositing a film having the formula A IIB B VIA , wherein A IIB is a group IIB metal and B VIA is a chalcogenide selected from the group consisting of S, Se and Te, upon a target surface comprising the steps of: exposing said surface to an environment containing a decomposable organo-metallic compound, said compound selected from the group consisting of R-M-X-R', R-M-X-M-R', R-X-M-X-R', R-M-CH 2 -X-R' and R-M-X-X-R' wherein: R and R' are each selected from the group consisting of hydrogen, an alkyl, an aryl and an organic radical containing a heteroatom; M is a group IIB metal; and X is a chalcogenide; and decomposing said organo-metallic compound by low temperature thermolysis between 50° and 100° C. to effect deposition of said film upon said surface.
Claim 6
Independent Claim
131 words
A method of depositing a film having the formula A IIB B VIA , wherein A IIB is a group IIB metal and B VIA is a chalcogenide selected from the group consisting of S, Se and Te, upon a target surface comprising the steps of: exposing said surface to an environment containing a decomposable organo-metallic compound, said compound selected from the group consisting of R-M-X-R', R-M-X-M-R', R-X-M-X-R', R-M-CH 2 -X-R' and R-M-X-X-R' wherein: R and R' are each selected from the group consisting of hydrogen, an alkyl, an aryl and an organic radical containing a heteroatom; M is a group IIB metal; and X is a chalcogenide; and decomposing said organo-metallic compound by low temperature thermolysis between 50° and 100° C. to effect deposition of said film upon said surface.
Claim 7
Dependent Claim
19 words
The method of claim 4 wherein said organo-metallic compound is Ph-Hg-Te-Ph and the deposited film has the formula HgTe.
Claim 8
Dependent Claim
109 words
A film on a surface having the formula A IIB B VIA , wherein A IIB is a group IIB metal and B VIA is a chalcogenide selected from the group consisting of S, Se and Te, said film produced by the steps of photolytically decomposing an organo-metallic compound to effect deposition of said film upon said surface, said organo-metallic compound selected from the group consisting of R-X-M-X-R', R-M-X-M-R', R-M-X-R', R-M-CH 2 -X-R' and R-M-X-X-R' wherein R and R' are each selected from the group consisting of hydrogen, an alkyl, an aryl and an organic radical containing a heteroatom; M is a group IIB metal; X is a chalcogenide.
Claim 9
Dependent Claim
109 words
A film on a surface having the formula A IIB B VIA , wherein A IIB is a group IIB metal and B VIA is a chalcogenide selected from the group consisting of S, Se and Te, said film produced by the steps of photolytically decomposing an organo-metallic compound to effect deposition of said film upon said surface, said organo-metallic compound selected from the group consisting of R-X-M-X-R', R-M-X-M-R', R-M-X-R', R-M-CH 2 -X-R' and R-M-X-X-R' wherein R and R' are each selected from the group consisting of hydrogen, an alkyl, an aryl and an organic radical containing a heteroatom; M is a group IIB metal; X is a chalcogenide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-06-17 | 1988-12-17 | 1989-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-06-17 | 1992-12-17 | 1993-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-06-17 | 1996-12-17 | 1997-06-18 | $7700.00 | Window Closed / Lapsed |