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US4670763A
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Thin film field effect transistor
Assignee: Energy Conversion Devices Inc
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Filing: 1984-05-14
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Granted: 1987-06-02
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Expires: 2004-05-14
Abstract
Abstract There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprise rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 Stephen J. Hudgens
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 10:09
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/40; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/674; H10D30/6741; H10D30/6743; H10D62/00; H10D62/40; H10D62/80; H10D62/83; H10D62/832; H10D64/00; H10D64/60; H10D64/64; H10D64/647; H10D86/60; H10P; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
76 words
A thin film field effect transistor comprising: a body of semiconductor material, said body including at least silicon, said semiconductor material having a structure more ordered than amorphous semiconductor material and less ordered than single crystalline semiconductor material; a source and a drain of amorphous semiconductor alloy material formed on said body and forming rectifying contacts with said body of semiconductor material; and a gate electrode adjacent to and insulated from said body of semiconductor material.
Claim 2
Dependent Claim
76 words
A thin film field effect transistor comprising: a body of semiconductor material, said body including at least silicon, said semiconductor material having a structure more ordered than amorphous semiconductor material and less ordered than single crystalline semiconductor material; a source and a drain of amorphous semiconductor alloy material formed on said body and forming rectifying contacts with said body of semiconductor material; and a gate electrode adjacent to and insulated from said body of semiconductor material.
Claim 3
Dependent Claim
24 words
A thin film field effect transistor as defined in claim 1 wherein said source and drain are deposited on said body of semiconductor material.
Claim 4
Dependent Claim
27 words
A thin film field effect transistor as defined in claim 1 wherein said source and drain are formed as doped regions on said body of semiconductor material.
Claim 5
Dependent Claim
24 words
A thin film field effect transistor as defined in claim 3 wherein said body is p-type and wherein said doped regions are n-type regions.
Claim 6
Dependent Claim
24 words
A thin film field effect transistor as defined in claim 3 wherein said body is n-type and wherein said doped regions are p-type regions.
Claim 7
Dependent Claim
20 words
A thin film field effect transistor as defined in claim 1 wherein said body of semiconductor material also includes germanium.
Claim 8
Dependent Claim
28 words
A thin film field effect transistor as defined in claim 4 wherein said source and drain comprise deposits of a doped semiconductor on said body of semiconductor material.
Claim 9
Dependent Claim
17 words
A thin film field effect transistor as defined in claim 7 wherein said doped semiconductor includes phosphorus.
Claim 10
Dependent Claim
18 words
A thin film field effect transistor as defined in claim 7 wherein said amorphous semiconductor alloy includes silicon.
Claim 11
Dependent Claim
18 words
A thin film field effect transistor as defined in claim 9 wherein said amorphous silicon alloy includes hydrogen.
Claim 12
Dependent Claim
18 words
A thin film field effect transistor as defined in claim 9 wherein said amorphous silicon alloy includes fluorine.
Claim 13
Dependent Claim
20 words
A thin film field effect transistor as defined in claim 1 wherein said body of semiconductor material further includes hydrogen.
Claim 14
Dependent Claim
20 words
A thin film field effect transistor as defined in claim 1 wherein said body of semiconductor material further includes fluorine.
Claim 15
Dependent Claim
27 words
A thin film field effect transistor as defined in claim 1 further including an insulative layer disposed between said gate electrode and said body of semiconductor material.
Claim 16
Dependent Claim
23 words
A thin film field effect transistor as defined in claim 14 wherein said insulative layer is formed from silicon oxide or silicon nitride.
Claim 17
Dependent Claim
20 words
A thin film field effect transistor as defined in claim 1 wherein said gate electrode is formed from a metal.
Claim 18
Dependent Claim
18 words
A thin film field effect transistor as defined in claim 16 wherein said metal is chromium or aluminum.
Claim 19
Independent Claim
174 words
A system for selectively addressing each element of an array of elements, said system comprising: a first set of address lines; a second set of address lines spaced from and crossing at an angle to said first set of address lines to form a plurality of crossover points therewith; each said crossover point being associated with a given one of said elements to be addressed; and addressing circuitry coupled to said first and second sets of address lines for selectively applying addressing potentials to respective pairs of said first and second sets of address lines, said addressing circuitry including at least one thin film field effect transistor comprising a body of semiconductor material, said body including at least silicon with said semiconductor material having a structure more ordered than amorphous semiconductor material and less ordered than single crystalline semiconductor material, a source and a drain of amorphous semiconductor alloy material formed as rectifying contacts on said body of semiconductor material, and a gate electrode adjacent to and insulated from said body of semiconductor material.
Claim 20
Independent Claim
174 words
A system for selectively addressing each element of an array of elements, said system comprising: a first set of address lines; a second set of address lines spaced from and crossing at an angle to said first set of address lines to form a plurality of crossover points therewith; each said crossover point being associated with a given one of said elements to be addressed; and addressing circuitry coupled to said first and second sets of address lines for selectively applying addressing potentials to respective pairs of said first and second sets of address lines, said addressing circuitry including at least one thin film field effect transistor comprising a body of semiconductor material, said body including at least silicon with said semiconductor material having a structure more ordered than amorphous semiconductor material and less ordered than single crystalline semiconductor material, a source and a drain of amorphous semiconductor alloy material formed as rectifying contacts on said body of semiconductor material, and a gate electrode adjacent to and insulated from said body of semiconductor material.
Claim 21
Dependent Claim
23 words
A system as defined in claim 18 wherein said source and drain are formed as doped regions on said body of semiconductor material.
Claim 22
Dependent Claim
22 words
A system as defined in claim 19 wherein said body of semiconductor material is p-type and said doped regions are n-type regions.
Claim 23
Dependent Claim
22 words
A system as defined in claim 19 wherein said body of semiconductor material is n-type and said doped regions are p-type regions.
Claim 24
Dependent Claim
16 words
A system as defined in claim 18 wherein said body of semiconductor material also includes germanium.
Claim 25
Dependent Claim
14 words
A system as defined in claim 18 wherein said amorphous semiconductor alloy includes silicon.
Claim 26
Dependent Claim
14 words
A system as defined in claim 23 wherein said amorphous silicon alloy includes hydrogen.
Claim 27
Dependent Claim
23 words
A system as defined in claim 18 wherein said body of semiconductor material of said thin film field effect transistor further includes hydrogen.
Claim 28
Dependent Claim
23 words
A system as defined in claim 18 wherein said body of semiconductor material of said thin film field effect transistor further includes fluorine.
Claim 29
Dependent Claim
30 words
A system as defined in claim 18 wherein said thin film field effect transistor further includes an insulative layer disposed between said gate electrode and said body of semiconductor material.
Claim 30
Dependent Claim
19 words
A system as defined in claim 27 wherein said insulative layer is formed from silicon oxide or silicon nitride.
Claim 31
Dependent Claim
23 words
A system as defined in claim 18 wherein said gate electrode of said thin film field effect transistor is formed from a metal.
Claim 32
Dependent Claim
14 words
A system as defined in claim 29 wherein said metal is chromium or aluminum.
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