Patent US4659392A successfully refreshed from Google Patents.
US4659392A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Selective area double epitaxial process for fabricating silicon-on-insulator structures for use with MOS devices and integrated circuits
Assignee: The AT&T MVPD Group LLC
•
Filing: 1986-07-30
•
Granted: 1987-04-21
•
Expires: 2006-07-30
Abstract
Abstract A process is disclosed for preparing selectively doped and recrystallized silicon-on-insulator semiconductor wafers, and wafers prepared thereby, wherein successive amorphizing and annealing sequences are utilized to optimize the defect structure and doping of multiple regions or islands of the silicon on an insulator substrate. Prior to fabrication of the active devices, the various silicon islands are given customized ion implantation treatments to amorphize a silicon near-interface layer under differing sets of implantation conditions. The entire wafer is then annealed to achieve downward epitaxial recrystallization of the amorphized near-interface layers in all of the amorphized islands, growing on the near-surface crystalline layer of the silicon remote from the interface. The near-surface layers of the islands are then amorphized and annealed to achieve upward epitaxial recrystallization of the layers on the underlying silicon layer. By this approach, the crystalline defect structure and the dopant distributions of the islands are individually optimized for specific applications.
Inventors
- 👤 Prahalad K. Vasudev
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 23:07
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D86/00; H10D86/01; H10D86/03; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2926; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3822; H10P30/208; H10P30/226; Y; Y10; Y10S; Y10S148/00; Y10S148/077
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
164 words
A process for fabricating a semiconductor device, comprising the steps of: furnishing a sapphire substrate with a monocrystalline silicon layer thereon; forming at least two islands in said silicon layer such that each of said islands and said substrate defines an interface therebetween; implanting oxygen ions into a first one of said islands under implantation conditions sufficient to amorphize and N + dope a thin layer in said first island adjacent its interface with said substrate ano so that said substrate is not amorphized; implanting silicon ions into a second one of said islands and an underlying portion of said sapphire substrate under implant conditions sufficient to amorphize and P + dope a thin layer in said second island adjacent its interface with said substrate; and annealing said first and second silicon islands to achieve downward epitaxial recrystallization of the amorphized layers of said first and second islands from the respective crystalline portions of the silicon remote from the respective interfaces with said substrate.
Claim 2
Dependent Claim
164 words
A process for fabricating a semiconductor device, comprising the steps of: furnishing a sapphire substrate with a monocrystalline silicon layer thereon; forming at least two islands in said silicon layer such that each of said islands and said substrate defines an interface therebetween; implanting oxygen ions into a first one of said islands under implantation conditions sufficient to amorphize and N + dope a thin layer in said first island adjacent its interface with said substrate ano so that said substrate is not amorphized; implanting silicon ions into a second one of said islands and an underlying portion of said sapphire substrate under implant conditions sufficient to amorphize and P + dope a thin layer in said second island adjacent its interface with said substrate; and annealing said first and second silicon islands to achieve downward epitaxial recrystallization of the amorphized layers of said first and second islands from the respective crystalline portions of the silicon remote from the respective interfaces with said substrate.
Claim 3
Dependent Claim
53 words
A process according to claim 1 wherein the implatation conditions for the silicon ions are sufficient to cause damage to said underlying portion of said sapphire substrate such that aluminum atoms are released from said substrate into said thin layer of said second silicon island and thereby P + dope said thin layer.
Claim 4
Dependent Claim
33 words
A process according to claim 1 wherein the implantation conditions for the step of implanting silicon ions into said second island include an implantation dose of about 2.5×10 15 ions per square centimeter.
Claim 5
Dependent Claim
46 words
A process according to claim 1 wherein the implantation conditions for the step of implanting oxygen ions into said first island include an implantation dose of about 3×10 15 ions per square centimeter and a dose current of less than about 2 microamps per square centimeter.
Claim 6
Dependent Claim
60 words
A process according to claim 1 further comprising the step of: surface amorphizing the top surface layer of said first and second silicon islands, leaving an underlying silicon crystalline layer; and annealing said first and second silicon islands to achieve upward epitaxial recrystallization of the amorphized surface layer from the crystalline portion of the silicon remote from the top surface.
Claim 7
Dependent Claim
24 words
A process according to claim 1 wherein the step of implanting oxygen ions into said first silicon island is conducted at liquid nitrogen temperatures.
Claim 8
Dependent Claim
17 words
A process according to claim 1 wherein the step of forming said islands is by mesa etching.
Claim 9
Dependent Claim
46 words
A process according to claim 1 wherein the step of implanting oxygen ions into said first island includes the substeps of: masking all areas except those into which oxygen ions are to be implanted; implanting the oxygen ions; and removing the mask from the masked areas.
Claim 10
Dependent Claim
46 words
A process according to claim 1 wherein the step of implanting silicon ions into said second island includes the substeps of: masking all areas except those into which silicon ions are to be implanted; implanting the silicon ions; and removing the mask from the masked areas.
Claim 11
Dependent Claim
31 words
A process according to claim 3 wherein the implantation conditions for the step of implanting silicon ions into said second silicon island further include an implantation energy of about 100 KeV.
Claim 12
Dependent Claim
167 words
A process for fabricating a semiconductor device comprising the steps of: furnishing a substrate of insulating material with a single crystal semiconductor layer thereon; forming at least two islands in said semiconductor layer such that each of said islands and said substrate defines an interface therebetween; implanting a first ion species into a first one of said islands under implant energy and dosage sufficient to amorphize and dope to a first conductivity type a thin layer in said first silicon island adjacent its interface with said substrate; implanting a second ion species into a second one of said islands under implant energy and dosage sufficient to amorphize and dope to a second conductivity type a thin layer in said second silicon island adjacent its interface with said substrate; and annealing said first and second silicon islands to achieve downward epitaxial recrystallization of the amorphized layers of said first and second islands from the respective crystalline portions of the silicon remote from the respective interfaces with said substrate.
Claim 13
Dependent Claim
167 words
A process for fabricating a semiconductor device comprising the steps of: furnishing a substrate of insulating material with a single crystal semiconductor layer thereon; forming at least two islands in said semiconductor layer such that each of said islands and said substrate defines an interface therebetween; implanting a first ion species into a first one of said islands under implant energy and dosage sufficient to amorphize and dope to a first conductivity type a thin layer in said first silicon island adjacent its interface with said substrate; implanting a second ion species into a second one of said islands under implant energy and dosage sufficient to amorphize and dope to a second conductivity type a thin layer in said second silicon island adjacent its interface with said substrate; and annealing said first and second silicon islands to achieve downward epitaxial recrystallization of the amorphized layers of said first and second islands from the respective crystalline portions of the silicon remote from the respective interfaces with said substrate.
References Cited (Backward Citations)
US4385937A
Cited
US4509990A
Cited
US4498224A
Cited
US4523963A
Cited
US4588447A
Cited
US4584026A
Cited
US4617066A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-04-20 | 1990-10-20 | 1991-04-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-04-20 | 1994-10-20 | 1995-04-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-04-20 | 1998-10-20 | 1999-04-21 | $7700.00 | Window Closed / Lapsed |