US4657699A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Resistor compositions
Assignee: EIDP Inc
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Filing: 1984-12-17
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Granted: 1987-04-14
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Expires: 2004-12-17
Abstract
Abstract The invention is directed to a thick film resistor composition for firing in a low oxygen-containing atmosphere comprising finely divided particles of (a) a semiconductive material consisting essentially of a refractory metal carbide, oxycarbide or mixtures thereof and (b) a nonreducing glass having a softening point below that of the semiconductive material dispersed in (c) organic medium and to resistor elements made therefrom.
Inventors
- 👤 Kumaran M. Nair
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 15:28
CPC Classifications
H; H01; H01C; H01C7/00; H01C17/00; H01C17/06; H01C17/065; H01C17/06506; H01C17/06513; H01C17/0652; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49099
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
72 words
A thick film resistor composition for firing in a low oxygen-containing atmosphere comprising finely divied particles of (a) a semiconductive material consisting essentially of a refractory metal carbide, oxycarbide or mixture thereof, the refractory metal being selected from Al, Zr, Hf, Ta, W, Mo and mixtures thereof; and (b) a nonreducing glass having a softening point below that of the semiconductive material, both (a) and (b) being dispersed in (c) organic medium.
Claim 2
Dependent Claim
72 words
A thick film resistor composition for firing in a low oxygen-containing atmosphere comprising finely divied particles of (a) a semiconductive material consisting essentially of a refractory metal carbide, oxycarbide or mixture thereof, the refractory metal being selected from Al, Zr, Hf, Ta, W, Mo and mixtures thereof; and (b) a nonreducing glass having a softening point below that of the semiconductive material, both (a) and (b) being dispersed in (c) organic medium.
Claim 3
Dependent Claim
28 words
The composition of claim 1 which contains particles of a conductive material selected from RuO 2 , Ru, Cu, Ni, Ni 3 B and mixtures and precursors thereof.
Claim 4
Dependent Claim
50 words
A method for making resistor elements comprising the sequential steps of (a) printing upon a ceramic substrate a pattern of the composition of claim 1; and (b) firing the composition in a low oxygen-containing atmosphere to effect volatilization of the organic medium therefrom and liquid phase sintering of the glass.
Claim 5
Dependent Claim
20 words
The composition of claim 1 in which the semiconductive material is selected from silicon carbide, silicon oxycarbide and mixtures thereof.
Claim 6
Dependent Claim
61 words
The composition of claim 1 in which the nonreducing glass is selected from alumino borosilicate glass containing Ca 2+ , Ti 4+ and Zr 4+ , alumino borosilicate glass containing Ba 2+ , Ca 2+ , Zr 4+ , Mg 2+ , and Ti 4+ , borosilicate glass containing Bi 3+ and Li + , lead germanate glass and mixtures thereof.
Claim 7
Dependent Claim
75 words
A resistor element comprising a thick film layer of finely divided particles of a semiconductive material consisting essentially of a refractory metal carbide, oxycarbide or mixture thereof, the refractory metal being selected from Al, Zr, Hf, Ta, W, Mo and mixtures thereof; and a sintered nonreducing glass having a softening point below that of the semiconductive material, the layer having been fired in a low oxygen-containing atmosphere to effect liquid phase sintering of the glass.
Claim 8
Dependent Claim
75 words
A resistor element comprising a thick film layer of finely divided particles of a semiconductive material consisting essentially of a refractory metal carbide, oxycarbide or mixture thereof, the refractory metal being selected from Al, Zr, Hf, Ta, W, Mo and mixtures thereof; and a sintered nonreducing glass having a softening point below that of the semiconductive material, the layer having been fired in a low oxygen-containing atmosphere to effect liquid phase sintering of the glass.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-04-13 | 1990-10-13 | 1991-04-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-04-13 | 1994-10-13 | 1995-04-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-04-13 | 1998-10-13 | 1999-04-14 | $7700.00 | Window Closed / Lapsed |