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Method of producing electronic components utilizing cured vinyl and/or acetylene terminated copolymers

Assignee: International Business Machines Corp
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Filing: 1986-03-11
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Granted: 1987-04-07
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Expires: 2006-03-11
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Abstract

Abstract A method of producing electronic components is disclosed wherein an insulator is in situ cured. The insulator is comprised of a polymerizable oligomer end capped with vinyl and/or acetylenic end groups which both imidize and cross-link upon cure to provide a three-dimensional dielectric network.

Inventors

  • 👤 Constance J. Araps
  • 👤 Steven M. Kandetzke
  • 👤 Mark A. Takacs

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 14:29
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P14/63; H10P14/6326; H10P14/6342; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/0313; H05K1/032; H05K1/0346; H05K3/00; H05K3/46; H05K3/4644; H05K3/4673; H05K3/4676; H10P14/65; H10P14/6516; H10P14/6536

Claims Analysis

Total Claims: 27
Claim 1
Independent Claim 88 words
A method for forming dielectrically isolated island regions in a semiconductor substrate comprising: (a) forming in said substrate a recess trench pattern defining a plurality of isolated island regions; (b) filling said trenches with a composition containing as a component a polymerizable oligomer selected from the group consisting of polyamic acids, the corresponding polyamic esters, the corresponding polyisoimides, and mixtures therein, wherein said polymerizable oligomer is vinyl and/or acetylenic end capped; (c) curing composition in situ in the trenches to form an imidized three dimensional dielectric polyimide therein.
Claim 2
Independent Claim 88 words
A method for forming dielectrically isolated island regions in a semiconductor substrate comprising: (a) forming in said substrate a recess trench pattern defining a plurality of isolated island regions; (b) filling said trenches with a composition containing as a component a polymerizable oligomer selected from the group consisting of polyamic acids, the corresponding polyamic esters, the corresponding polyisoimides, and mixtures therein, wherein said polymerizable oligomer is vinyl and/or acetylenic end capped; (c) curing composition in situ in the trenches to form an imidized three dimensional dielectric polyimide therein.
Claim 3
Dependent Claim 14 words
The method of claim 1 including forming an integrated circuit in the island regions.
Claim 4
Dependent Claim 22 words
The method of claim 1 wherein the number average molecular weight of said polymerizable oligomers ranges from about 1,500 to about 8,000.
Claim 5
Dependent Claim 16 words
The method of claim 3 wherein said molecular weight ranges from about 2,000 to about 4,000.
Claim 6
Dependent Claim 11 words
The method of claim 3 wherein said polymerizable oligomer comprises polyisoimide.
Claim 7
Dependent Claim 32 words
The method of claim 5 wherein said recessed trenches range in width from about 0.5 μm to about 2 μm and range in depth from about 5.5 μm to about 6 μm.
Claim 8
Dependent Claim 24 words
The method of claim 5 wherein said polyisoimide concentration in said composition used to fill said trenches is less than about 80 weight percent.
Claim 9
Dependent Claim 18 words
The method of claim 7 wherein said polyisoimide concentration ranges from about 30 to about 60 weight percent.
Claim 10
Dependent Claim 49 words
The method of claim 7 wherein said curing is accomplished using a combined dry/cure cycle wherein said cycle is initiated at about 85° C. and stepped to about 170° C. followed by about 200° C., followed by about 300° C., and a final curing step at about 400° C.
Claim 11
Dependent Claim 50 words
The method of claim 4 wherein a combined dry/cure cycle is utilized and wherein one step in said cure cycle occurs at a temperature ranging from about 160° C. to 190° C. during which softening and planarization of the dried polyisoimide is obtained prior to crosslinking at subsequent higher temperatures.
Claim 12
Dependent Claim 15 words
The method of claim 5 including an additional post curing step at about 500° C.
Claim 13
Dependent Claim 11 words
The method of claim 1 wherein said polymerizable oligomer comprises polyisoimide.
Claim 14
Dependent Claim 16 words
The method of claim 12 wherein said curing includes at least one 400° C. curing step.
Claim 15
Dependent Claim 17 words
The method of claim 13 wherein said cured, imidized, polyisoimide is subsequently covered with an inorganic dielectric.
Claim 16
Independent Claim 129 words
A method of forming multilevel metallurgy on a substrate comprising an integrated circuit device, comprising: (a) applying a coating to the surface of the substrate comprising the integrated circuit device thereby filling and substantially planarizing the substrate surface, using a composition containing a polymerizable oligomer selected from the group consisting of polyamic acids, the corresponding polyamic esters, the corresponding polyisoimides, and mixtures thereof, wherein the polymerizable oligomer is vinyl and/or acetylenic end-capped; (b) curing the composition to form a three-dimensional imidized layer thereof, (c) forming via openings in the imidized layer extending to conductive portions of the integrated circuit device; and (d) forming a conductive pattern on the imidized layer and in the via openings to at least one of the underlaying conductive portions of the integrated circuit device.
Claim 17
Independent Claim 129 words
A method of forming multilevel metallurgy on a substrate comprising an integrated circuit device, comprising: (a) applying a coating to the surface of the substrate comprising the integrated circuit device thereby filling and substantially planarizing the substrate surface, using a composition containing a polymerizable oligomer selected from the group consisting of polyamic acids, the corresponding polyamic esters, the corresponding polyisoimides, and mixtures thereof, wherein the polymerizable oligomer is vinyl and/or acetylenic end-capped; (b) curing the composition to form a three-dimensional imidized layer thereof, (c) forming via openings in the imidized layer extending to conductive portions of the integrated circuit device; and (d) forming a conductive pattern on the imidized layer and in the via openings to at least one of the underlaying conductive portions of the integrated circuit device.
Claim 18
Dependent Claim 36 words
The method of claim 15 wherein the polymerizable oligomer includes at least one component selected from the group consisting of polyamic acids and polyamic esters, and wherein the curing is accomplished using a stepped cure cycle.
Claim 19
Dependent Claim 24 words
The method of claim 11 wherein the polyamic acids have been fractionated to remove molecular weight components exceeding a molecular weight of about 4,000.
Claim 20
Dependent Claim 27 words
The method of claim 15 wherein the curing is accomplished using a stepped cure cycle within a temperature range from about 85° C. to about 400° C.
Claim 21
Dependent Claim 14 words
The method of claim 15 wherein the curing is accomplished using a catalytic cure.
Claim 22
Dependent Claim 16 words
The method of claim 19 wherein the curing is accomplished using radiation to initiate catalyst activity.
Claim 23
Dependent Claim 23 words
The method of claim 15 including the additional step of: (e) postcuring the composition in situ at temperatures up to about 500° C.
Claim 24
Dependent Claim 17 words
The method of claim 15, including repeating steps (a) through (d) to the desired multilevel of metallurgy.
Claim 25
Dependent Claim 14 words
The method of claim 15 wherein the polymerizable oligomer comprises at least one polyisoimide.
Claim 26
Dependent Claim 22 words
The method of claim 23 wherein the curing is accomplished within a temperature range of about 85° C. to about 400° C.
Claim 27
Dependent Claim 18 words
The method of claim 15 wherein the composition includes triethynyl benzene to be copolymerized with the polymerizable oligomer.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-04-06 1990-10-06 1991-04-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-04-06 1994-10-06 1995-04-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-04-06 1998-10-06 1999-04-07 $7700.00 Window Closed / Lapsed

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