← Back to Patent Explorer
US4030948A Expired / Lapsed US ⏱️ 0.0 years remaining

Polyimide containing silicones as protective coating on semiconductor device

Assignee: Shin Etsu MicroSi Inc
•
Filing: 1975-07-21
•
Granted: 1977-06-21
•
Expires: 1995-07-21
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A copolymer which is the reaction product of a tetracarboxylic acid dianhydride, and organic diamine and a di(aminoalkyl) poly siloxane where the di(aminoalkyl) poly siloxane constitutes 18 - 45 mole percent of the total amine requirement of the polymer and is applicable as a conformal protective coating for electronic devices.

Inventors

  • 👤 Abe Berger

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 10:04
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10W; H10W72/00; H10W72/90; H10W74/00; H10W74/10; H10W74/131; H10W74/134; H10W74/137; H10W74/40; H10W74/47; H10W74/476; H10P14/69215; H10P14/6938; H10P14/6939; H10P14/69391; H10W72/50; H10W72/531; H10W72/536; H10W72/59; Y; Y10; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31652; Y10T428/31663; Y10T428/31721

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 229 words
A semiconductor element comprised of a body of semiconductor material having at least two regions of opposite-type semiconductivity and a P-N junction disposed between each pair of regions of opposite type semiconductivity: and end portion of at least one P-N junction exposed at a surface of the body; and at least one layer of conformal protective coating material disposed on the exposed end portion of the at least one P-N junction, the layer comprising a copolymer which is a reaction product of a tetracarboxylic acid dianhydride, a diamine and a di(aminoalkyl) siloxane, which is a copolymer having recurring structural units of a block copolymer of the formulas: ##STR8## wherein: R is a divalent hydrocarbon radical: R' is a monovalent hydrocarbon radical wherein each R' may be the same radical or a different radical from the others; R" is a tetravalent organic radical; Q is a divalent organic radical which is a residue of an organic diamine; x is an integer having a value of from 1 to 10: m is an integer greater than 1 and n is an integer greater than 1, p is an integer greater than or equal to 0, and the recurring units designated by m, n, and p are such that the mole percent of silicone diamine in the total polymer constitutes 18 to 45 mole percent of the total diamines in the copolymer.
Claim 2
Dependent Claim 229 words
A semiconductor element comprised of a body of semiconductor material having at least two regions of opposite-type semiconductivity and a P-N junction disposed between each pair of regions of opposite type semiconductivity: and end portion of at least one P-N junction exposed at a surface of the body; and at least one layer of conformal protective coating material disposed on the exposed end portion of the at least one P-N junction, the layer comprising a copolymer which is a reaction product of a tetracarboxylic acid dianhydride, a diamine and a di(aminoalkyl) siloxane, which is a copolymer having recurring structural units of a block copolymer of the formulas: ##STR8## wherein: R is a divalent hydrocarbon radical: R' is a monovalent hydrocarbon radical wherein each R' may be the same radical or a different radical from the others; R" is a tetravalent organic radical; Q is a divalent organic radical which is a residue of an organic diamine; x is an integer having a value of from 1 to 10: m is an integer greater than 1 and n is an integer greater than 1, p is an integer greater than or equal to 0, and the recurring units designated by m, n, and p are such that the mole percent of silicone diamine in the total polymer constitutes 18 to 45 mole percent of the total diamines in the copolymer.
Claim 3
Dependent Claim 24 words
The semiconductor element of claim 1 wherein the polysiloxane siamine constitutes from about 28 to about 32 mole percent of the total diamines present.
Claim 4
Dependent Claim 18 words
The semiconductor element of claim 1 wherein the polysiloxanediamine constitutes 30 mole percent of the total diamines present.
Claim 5
Dependent Claim 27 words
The semiconductor element of claim 1 wherein the material of the layer of the conformal protective coating material contains at least one electrically insulating material admixed therein.
Claim 6
Dependent Claim 36 words
The semiconductor element of claim 4 in which the electrically insulating material is a material selected from the group consisting of aluminum oxide, silicon oxide, glass fibers, boron nitride, quartz, mica, magnexium oxide and activated polytetrafluorethylene.
Claim 7
Dependent Claim 23 words
The semiconductor element of claim 1 including a finely divided electrically insulating material uniformly distributed throughout the layer of conformal protective coating material.
Claim 8
Dependent Claim 36 words
The semiconductor element of claim 6 in which the electrically insulating material is a material selected from the group consisting of aluminum oxide, silicon oxide, glass fibers, boron nitride, quartz, mica, magnesium oxide, and reactivated polytetrafluorethylene.
Claim 9
Dependent Claim 48 words
The semiconductor element of claim 1 including a layer of an electrically insulating material selected from the group consisting of aluminum nitride, silicon oxide and silicon nitride deposited on the exposed end portion of the at least one P-N junction beneath the layer of conformal protective coating material.
Claim 10
Dependent Claim 48 words
The semiconductor element of claim 1 including a layer of an electrically insulating material selected from the group consisting of aluminum nitride, silicon oxide and silicon nitride deposited on the exposed end portion of the at least one P-N junction and beneath the layer of protective coating material.

References Cited (Backward Citations)

US3615913A Cited
US3684592A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1980-06-20 1980-12-20 1981-06-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1984-06-20 1984-12-20 1985-06-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1988-06-20 1988-12-20 1989-06-21 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag