Passivated surfaces and protective coatings for semiconductor devices and processes for producing the same
Abstract
Abstract SURFACE AREAS AND EXPOSED P-N JUNCTIONS OF BODIES OF SEMICONDUCTOR MATERIAL ARE INITIALLY ETCHED AND THEN CLEANED WITH (1) ETHYLENEDIAMINETTETRAAEDIC ACIDS OR (2) WITH A SOLUTION OF IODINE OR (3) A SOLUTION OF IODINE AND IODINE PENTOXIDE TO OBTAIN AN EXXENTIALLY ATOMICALLY CLEAN SURFACE PRIOR TO PASSIVATION; THE TREATED SURFACES ARE PASSIVATED AND PRIMED BY A SILANE COMPOSITION WHICH IS A PRIMER FOR A OVERLAY OF A PROTECTIVE COATING MATERIAL SUBSEQUENTLY APPLIED TO THE PASSIVATED SURFACE. THE PROTECTIVE COATING CONSISTS OF A MATERIAL SELECTED FROM THE GROUP CONSISTING OF ROOM TEMPERATURE VULCANIZING RUBBERS, SILICON VARNISHES, SOLID PERFLUOROHYDROCARBONS, PARYLENE RESINS, CURED RESINOUS AROMATIC POLYIMIDE, CURED RESINOUS AROMATIC POLYAMIDE-IMIDE, AND CURED RESINOUS BENZIMADOZLE-IMIDE COPOLYMER.
Inventors
- 👤 Hung Chi Chang
- 👤 John W Ostroski
Bibliographic Details
Claims Analysis
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