Patent US4652895A successfully refreshed from Google Patents.
US4652895A
Expired / Lapsed
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Zener structures with connections to buried layer
Assignee: Intersil Corp
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Filing: 1985-09-30
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Granted: 1987-03-24
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Expires: 2005-09-30
Abstract
Abstract A buried zener diode of reduced noise, bulk resistance and dynamic resistance, formed in an N- layer having a H+ layer buried, including a P+ surface anode of greater lateral area than an N+ cathode which is connected to a surface contact through the buried N+ layer and an N+ channel extending from the surface to the buried N+ layer. It also may be formed with a buried anode by reversing the conductivity types.
Inventors
- 👤 Henry L. Roskos
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 04:58
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/617; H10D8/00; H10D8/20; H10D8/25
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
165 words
A buried zener diode formed in an N conductivity type layer of a low impurity concentration having a surface portion, and an N conductivity type buried layer of a higher impurity concentration than said low impurity concentration at the bottom of said low impurity N layer, the improvement comprising: a first deep N conductivity type channel of said higher impurity concentration extending from said surface of said low impurity N layer to said buried layer; a shallow P conductivity type anode region in said surface; a second deep N conductivity type cathode channel of said higher impurity concentration extending from the bottom of said shallow P conductivity type anode region into said buried layer to produce a buried breakdown zener junction; said shallow P conductivity type anode region being of greater lateral area than said second deep N conductivity type cathode channel; an anode contact at said shallow P conductivity type anode region; and a cathode contact at said first deep N conductivity type channel.
Claim 2
Dependent Claim
165 words
A buried zener diode formed in an N conductivity type layer of a low impurity concentration having a surface portion, and an N conductivity type buried layer of a higher impurity concentration than said low impurity concentration at the bottom of said low impurity N layer, the improvement comprising: a first deep N conductivity type channel of said higher impurity concentration extending from said surface of said low impurity N layer to said buried layer; a shallow P conductivity type anode region in said surface; a second deep N conductivity type cathode channel of said higher impurity concentration extending from the bottom of said shallow P conductivity type anode region into said buried layer to produce a buried breakdown zener junction; said shallow P conductivity type anode region being of greater lateral area than said second deep N conductivity type cathode channel; an anode contact at said shallow P conductivity type anode region; and a cathode contact at said first deep N conductivity type channel.
Claim 3
Dependent Claim
22 words
A buried zener diode according to claim 1, wherein said N type impurities are phosphorous and said P type impurities are boron.
Claim 4
Dependent Claim
34 words
A buried zener diode according to claim 1, wherein said first deep N conductivity type channel is in the form of a ring surrounding and spaced from said second deep N conductivity type channel.
Claim 5
Dependent Claim
54 words
A buried zener diode according to claim 1, wherein said first deep N conductivity type channel contains a greater impurity concentration region at the surface of said low impurity N layer than the rest of said first deep N conductivity type channel and said cathode contact is made to said greater impurity concentration region.
Claim 6
Dependent Claim
42 words
A buried zener diode according to claim 3, further including an annular PNP transistor wrapped around said zener diode so that the diameter of the collector, base and emitter rings are greater than the diameter of said first deep conductivity type ring.
Claim 7
Dependent Claim
24 words
A buried zener diode according to claim 1 wherein said low impurity N layer is an epitaxial layer on a P conductivity type substrate.
Claim 8
Dependent Claim
23 words
A buried zener diode according to claim 1, wherein said buried layer is substantially spaced from said shallow P conductivity type anode region.
Claim 9
Dependent Claim
30 words
A buried zener diode according to claim 1, including a substrate, and a layer of dielectric isolation separating said low impurity N layer and said buried layer from said substrate.
Claim 10
Dependent Claim
28 words
A buried zener diode according to claim 1, wherein the depth of said second deep cathode channel is substantially greater than the depth of said shallow anode region.
Claim 11
Dependent Claim
175 words
A buried zener diode formed in an N conductivity type layer of a low impurity concentration having a surface portion and a P conductivity type buried layer of a higher impurity concentration than said low impurity concentration at the bottom of said N layer, the improvement comprising: a first deep P conductivity type channel of said higher impurity concentration extending from said surface of said N layer to said buried P layer; a shallow N conductivity type cathode region of a higher impurity concentration than said low impurity concentration and spaced substantially from said buried layer in said surface; a second deep P conductivity type anode channel of said higher impurity concentration extending from the bottom of said shallow N conductivity type cathode into said buried layer to produce a buried breakdown zener junction; said shallow N conductivity type region being of greater lateral area than said second deep P conductivity type channel; an anode contact at said first deep P conductivity type channel; and a cathode contact at said shallow N type cathode region.
Claim 12
Dependent Claim
175 words
A buried zener diode formed in an N conductivity type layer of a low impurity concentration having a surface portion and a P conductivity type buried layer of a higher impurity concentration than said low impurity concentration at the bottom of said N layer, the improvement comprising: a first deep P conductivity type channel of said higher impurity concentration extending from said surface of said N layer to said buried P layer; a shallow N conductivity type cathode region of a higher impurity concentration than said low impurity concentration and spaced substantially from said buried layer in said surface; a second deep P conductivity type anode channel of said higher impurity concentration extending from the bottom of said shallow N conductivity type cathode into said buried layer to produce a buried breakdown zener junction; said shallow N conductivity type region being of greater lateral area than said second deep P conductivity type channel; an anode contact at said first deep P conductivity type channel; and a cathode contact at said shallow N type cathode region.
Claim 13
Dependent Claim
32 words
A buried zener diode according to claim 10, wherein said first deep P conductivity channel is in the form of a ring surrounding and spaced from said second deep conductivity type channel.
Claim 14
Dependent Claim
22 words
A buried zener diode according to claim 10, wherein said N layer is an epitaxial layer on a P conductivity type substrate.
Claim 15
Dependent Claim
226 words
A buried zener diode formed in an N conductivity type layer of a low impurity concentration having a surface portion, and a P conductivity type buried layer of a higher impurity concentration than said low impurity concentration at the bottom of said N layer, the improvement comprising: a first deep P conductivity type channel of said higher impurity concentration extending from said surface of said N layer to said buried P layer; a shallow N conductivity type cathode region of a higher impurity concentration than said low impurity concentration and spaced substantially from said buried layer in said surface; a second deep P conductivity type anode channel of said higher impurity concentration extending from the bottom of said shallow N conductivity type cathode into said buried layer to produce a buried breakdown zener junction; a P conductivity region of a lower impurity concentration than said higher impurity concentration extending into said N layer a greater distance than said shallow N conductivity type anode region, but not as deep as said buried layer, and extending laterally between said first and second deep P conductivity type channels; said shallow N conductivity type region being of greater lateral area than said second deep P conductivity type channel; an anode contact at said first deep P conductivity type channel; and a cathode contact at said shallow N type cathode region.
Claim 16
Dependent Claim
226 words
A buried zener diode formed in an N conductivity type layer of a low impurity concentration having a surface portion, and a P conductivity type buried layer of a higher impurity concentration than said low impurity concentration at the bottom of said N layer, the improvement comprising: a first deep P conductivity type channel of said higher impurity concentration extending from said surface of said N layer to said buried P layer; a shallow N conductivity type cathode region of a higher impurity concentration than said low impurity concentration and spaced substantially from said buried layer in said surface; a second deep P conductivity type anode channel of said higher impurity concentration extending from the bottom of said shallow N conductivity type cathode into said buried layer to produce a buried breakdown zener junction; a P conductivity region of a lower impurity concentration than said higher impurity concentration extending into said N layer a greater distance than said shallow N conductivity type anode region, but not as deep as said buried layer, and extending laterally between said first and second deep P conductivity type channels; said shallow N conductivity type region being of greater lateral area than said second deep P conductivity type channel; an anode contact at said first deep P conductivity type channel; and a cathode contact at said shallow N type cathode region.
Claim 17
Dependent Claim
30 words
A buried zener diode according to claim 10, including a substrate, and a layer of dielectric isolation separating said low impurity N layer and said buried layer from said substrate.
Claim 18
Dependent Claim
28 words
A buried zener diode according to claim 10, wherein the depth of said second deep anode channel is substantially greater than the depth of said shallow cathode region.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-03-23 | 1990-09-22 | 1991-03-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-03-23 | 1994-09-22 | 1995-03-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-03-23 | 1998-09-22 | 1999-03-24 | $7700.00 | Window Closed / Lapsed |