US3735210A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Zener diode for monolithic integrated circuits
Assignee: RCA Corp
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Filing: 1971-06-07
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Granted: 1973-05-22
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Expires: 1991-06-07
Abstract
Abstract An improved zener diode for monolithic integrated circuits includes a first diffused region of one type conductivity having two portions, one of which portions has a significantly higher maximum impurity concentration than the other portion. A second diffused region of opposite type high conductivity is disposed within both portions of the first region and is separated from each by a PN junction, the PN junction between the second region and the lower conductivity portion being at a significantly greater depth than the PN junction between the second region and the high impurity concentration portion. The electrical contact to the second region is made only over the lower impurity concentration portion where the PN junction is at a significantly greater depth.
Inventors
- 👤 I Kalish
- 👤 H Khajezadeh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 08:59
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/20; H10D8/25; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/038; Y10S148/049; Y10S148/085; Y10S148/145
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
189 words
A semiconductor device comprising: a body of semiconductor material having a surface, means defining a zener diode in said body comprising a first region of one conductivity type containing two diffused portions, one of said portions having a high maximum impurity concentration and having a boundary at a predetermined depth with respect to said surface and the other portion having a significantly lower maximum impurity concentration and a boundary at a significantly lesser depth than said one portion, sAid body containing a second region of opposite type conductivity connected to both portions of said first region and separated from each by a PN junction, at least a part of the PN junction between said second region and said one portion being within the zones of maximum impurity concentration of each, a part of the other portion of said first region being at a significantly greater depth than the PN junction between said second region and said one portion of said first region; and an electrical contact to said second region only over said other portion of said first region where the PN junction is at a significantly greater depth.
Claim 2
Dependent Claim
189 words
A semiconductor device comprising: a body of semiconductor material having a surface, means defining a zener diode in said body comprising a first region of one conductivity type containing two diffused portions, one of said portions having a high maximum impurity concentration and having a boundary at a predetermined depth with respect to said surface and the other portion having a significantly lower maximum impurity concentration and a boundary at a significantly lesser depth than said one portion, sAid body containing a second region of opposite type conductivity connected to both portions of said first region and separated from each by a PN junction, at least a part of the PN junction between said second region and said one portion being within the zones of maximum impurity concentration of each, a part of the other portion of said first region being at a significantly greater depth than the PN junction between said second region and said one portion of said first region; and an electrical contact to said second region only over said other portion of said first region where the PN junction is at a significantly greater depth.
Claim 3
Dependent Claim
60 words
A semiconductor device as defined in claim 1 wherein: the maximum impurity concentration in said one portion of said first region is about 8 X 1019 atoms/cm3, the maximum impurity concentration in said other portion of said first region is about 5 X 1018 atoms/cm3, and the maximum impurity concentration in said second region is about 1.2 X 1021 atoms/cm3.
Claim 4
Dependent Claim
37 words
A semiconductor device as defined in claim 2 wherein: the PN junction between said second region and said other portion of said first region is at a depth of about 1.4 micrometers with respect to said surface.
Claim 5
Dependent Claim
44 words
A semiconductor device as defined in claim 3 wherein said zener diode is an element of a microcircuit of the monolithic integrated type, said first region being disposed within an isolated region in said body of the same conductivity type as said second region.
References Cited (Backward Citations)
US3305913A
Cited
US3347720A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-05-21 | 1976-11-20 | 1977-05-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-05-21 | 1980-11-20 | 1981-05-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-05-21 | 1984-11-20 | 1985-05-22 | $7700.00 | Window Closed / Lapsed |