Product for making isolated semiconductor structure

Claim 1

The method of forming an isolated semiconductor structure comprising: forming active devices or selected components in to-be-formed islands of semiconductor material, each island being separated from adjacent islands by a band of semiconductor material in which are formed no active devices, said active devices being formed by placing selected dopants in said to-be-formed islands to form selectively doped regions in said islands; etching grooves in the surface of the semiconductor material so as to remove a portion of each band in which no active devices were formed, thereby to create a plurality of islands of semiconductor material, each island containing active devices; oxidizing the semiconductor material exposed by said grooves to form an oxide layer of selected thickness over the surface of said grooves; forming and smoothing a thin glass film on the resulting structure by (a) reacting a gaseous mixtures of germane and silane with oxygen at a reaction temperature of from 350°14 500° C. to form a mixed germanium oxide/silicon oxide glass vapor; (b) depositing said glass mixture vapor on said resulting structure as a film of less than about 3 microns in thickness, said germanium oxide being about 50 mole percent of the germanium oxide/silicon oxide glass mixture; and (c) reflowing the resulting glass film at a temperature range of approximately 650° C. to 1000° C. to smooth the surface topography of the film to an essentially flat surface.

Claim 2

The method of forming an isolated semiconductor structure comprising: forming active devices or selected components in to-be-formed islands of semiconductor material, each island being separated from adjacent islands by a band of semiconductor material in which are formed no active devices, said active devices being formed by placing selected dopants in said to-be-formed islands to form selectively doped regions in said islands; etching grooves in the surface of the semiconductor material so as to remove a portion of each band in which no active devices were formed, thereby to create a plurality of islands of semiconductor material, each island containing active devices; oxidizing the semiconductor material exposed by said grooves to form an oxide layer of selected thickness over the surface of said grooves; forming and smoothing a thin glass film on the resulting structure by (a) reacting a gaseous mixtures of germane and silane with oxygen at a reaction temperature of from 350°14 500° C. to form a mixed germanium oxide/silicon oxide glass vapor; (b) depositing said glass mixture vapor on said resulting structure as a film of less than about 3 microns in thickness, said germanium oxide being about 50 mole percent of the germanium oxide/silicon oxide glass mixture; and (c) reflowing the resulting glass film at a temperature range of approximately 650° C. to 1000° C. to smooth the surface topography of the film to an essentially flat surface.

Claim 11

The method of forming an isolated semiconductor structure comprising: forming active devices or selected components in to-be-formed islands of semiconductor material, each island being separated from adjacent islands by a band of semiconductor material in which are formed no active devices, said active devices being formed by placing selected dopants in said to-be-formed islands to form selectively doped regions in said islands; etching grooves in the surface of the semiconductor material so as to remove a portion of each band in which no active devices were formed, thereby to create a plurality of islands of semiconductor material, each island containing active devices; oxidizing the semiconductor material exposed by said grooves to form an oxide layer of selected thickness over the surface of said grooves; forming and smoothing a glass film on the resulting structure by (a) reacting a gaseous mixture of germane and silane with oxygen at a reaction temperature of from 350°-500° C. to form a mixed germanium oxide/silicon oxide glass vapor; (b) depositing said glass mixture vapor on said resulting structure as a film, said germanium oxide being about 50 mole percent of the germanium oxide/silicon oxide glass mixture; and (c) reflowing the resulting glass film at a temperature range of approximately 650° C. to 1000° C. to smooth the surface topography of the film to an essentially flat surface.

Claim 12

The method of forming an isolated semiconductor structure comprising: forming active devices or selected components in to-be-formed islands of semiconductor material, each island being separated from adjacent islands by a band of semiconductor material in which are formed no active devices, said active devices being formed by placing selected dopants in said to-be-formed islands to form selectively doped regions in said islands; etching grooves in the surface of the semiconductor material so as to remove a portion of each band in which no active devices were formed, thereby to create a plurality of islands of semiconductor material, each island containing active devices; oxidizing the semiconductor material exposed by said grooves to form an oxide layer of selected thickness over the surface of said grooves; forming and smoothing a glass film on the resulting structure by (a) reacting a gaseous mixture of germane and silane with oxygen at a reaction temperature of from 350°-500° C. to form a mixed germanium oxide/silicon oxide glass vapor; (b) depositing said glass mixture vapor on said resulting structure as a film, said germanium oxide being about 50 mole percent of the germanium oxide/silicon oxide glass mixture; and (c) reflowing the resulting glass film at a temperature range of approximately 650° C. to 1000° C. to smooth the surface topography of the film to an essentially flat surface.