Method of fabricating a diode bridge rectifier in monolithic integrated circuit structure utilizing isolation diffusions and metal semiconductor rectifying barrier diode formation

Claim 1

The method of fabricating monolithic integrated circuit structure incorporating a metal-semiconductor rectifying barrier diode bridge comprising: providing a substrate of semiconductor material of one conductivity type; growing an epitaxial layer of semiconductor material of the opposite conductivity type on a surface of the substrate to produce a body of semiconductor material; diffusing conductivity type imparting material of the one conductivity type into portions of said layer extending to said substrate to form isolating barriers delineating a first sector of the opposite conductivity type electrically isolated from the remainder of the body and having a first and a second zone of the opposite conductivity type separated from each other by an intervening barrier of semiconductor material of the one conductivity type and delineating a second sector of the opposite conductivity type electrically isolated from the remainder of the body and having a third and a fourth zone of the opposite conductivity type; placing metal-semiconductor rectifying barrier forming metal on portions of said first zone and said second zone of said one sector, on a portion of said third zone, and on a portion of said fourth zone of said second sector and forming metal-semiconductor rectifying barriers between the metal and the semiconductor material; and forming a first electrical connection in ohmic contact with the first zone of semiconductor material and connected to the metal on the third zone, a second electrical connection in ohmic contact with the second zone of semiconductor material and connected to the metal on the fourth zone, a third electrical connection connected to the metal on the first and second zones, and a fourth electrical connection in ohmic contact with the third and fourth zones of semiconductor material.

Claim 2

The method of fabricating monolithic integrated circuit structure incorporating a metal-semiconductor rectifying barrier diode bridge comprising: providing a substrate of semiconductor material of one conductivity type; growing an epitaxial layer of semiconductor material of the opposite conductivity type on a surface of the substrate to produce a body of semiconductor material; diffusing conductivity type imparting material of the one conductivity type into portions of said layer extending to said substrate to form isolating barriers delineating a first sector of the opposite conductivity type electrically isolated from the remainder of the body and having a first and a second zone of the opposite conductivity type separated from each other by an intervening barrier of semiconductor material of the one conductivity type and delineating a second sector of the opposite conductivity type electrically isolated from the remainder of the body and having a third and a fourth zone of the opposite conductivity type; placing metal-semiconductor rectifying barrier forming metal on portions of said first zone and said second zone of said one sector, on a portion of said third zone, and on a portion of said fourth zone of said second sector and forming metal-semiconductor rectifying barriers between the metal and the semiconductor material; and forming a first electrical connection in ohmic contact with the first zone of semiconductor material and connected to the metal on the third zone, a second electrical connection in ohmic contact with the second zone of semiconductor material and connected to the metal on the fourth zone, a third electrical connection connected to the metal on the first and second zones, and a fourth electrical connection in ohmic contact with the third and fourth zones of semiconductor material.

Claim 9

The method of fabricating monolithic integrated circuit structure incorporating a metal-semiconductor rectifying barrier diode bridge comprising providing a substrate of semiconductor material of one conductivity type having a flat planar surface; growing an epitaxial layer of semiconductor material of the opposite conductivity type on said surface of the substrate, said layer having a flat planar surface parallel to the interface of the layer and the substrate, said substrate and layer forming a body of semiconductor material; diffusing conductivity type imparting material of the one conductivity type into selected portions of said layer from the surface to said substrate to form isolating barriers of semiconductor material of the one conductivity type delineating a first sector of the opposite conductivity type electrically isolated from the remainder of the body and having a first and a second zone of the opposite conductivity type separated from each other by an intervening barrier of semiconductor material of the one conductivity type and delineating a second sector of the opposite conductivity type electrically isolated from the remainder of the body and having a third and a fourth zone of the opposite conductivity type; forming an adherent nonconductive coating on the surface of the layer; placing metal-semiconductor rectifying barrier forming metal on portions of the surface of said first zone and said second zone of said one sector, on a portion of the surface of said third zone, and on a portion of the surface of said fourth zone of said second sector at openings in said coating and forming metal-semiconductor rectifying barriers between the metal and the semiconductor material; and placing conductive material on predetermined areas of said coating to form conductive buses including a first conductive bus in ohmic contact with the first zone of semiconductor material at an opening in the coating and connected to the metal on the surface of the third zone, a second conductive bus in ohmic contact with the second zone of semiconductor material at an opening in the coating and connected to the metal on the surface of the fourth zone, a third conductive bus connected to the metal on the surfaces of the first and second zones, and a fourth conductive bus in ohmic contact with the third zone of semiconductor material at an opening in the coating and in ohmic contact with the fourth zone of semiconductor material at an opening in the coating.

Claim 10

The method of fabricating monolithic integrated circuit structure incorporating a metal-semiconductor rectifying barrier diode bridge comprising providing a substrate of semiconductor material of one conductivity type having a flat planar surface; growing an epitaxial layer of semiconductor material of the opposite conductivity type on said surface of the substrate, said layer having a flat planar surface parallel to the interface of the layer and the substrate, said substrate and layer forming a body of semiconductor material; diffusing conductivity type imparting material of the one conductivity type into selected portions of said layer from the surface to said substrate to form isolating barriers of semiconductor material of the one conductivity type delineating a first sector of the opposite conductivity type electrically isolated from the remainder of the body and having a first and a second zone of the opposite conductivity type separated from each other by an intervening barrier of semiconductor material of the one conductivity type and delineating a second sector of the opposite conductivity type electrically isolated from the remainder of the body and having a third and a fourth zone of the opposite conductivity type; forming an adherent nonconductive coating on the surface of the layer; placing metal-semiconductor rectifying barrier forming metal on portions of the surface of said first zone and said second zone of said one sector, on a portion of the surface of said third zone, and on a portion of the surface of said fourth zone of said second sector at openings in said coating and forming metal-semiconductor rectifying barriers between the metal and the semiconductor material; and placing conductive material on predetermined areas of said coating to form conductive buses including a first conductive bus in ohmic contact with the first zone of semiconductor material at an opening in the coating and connected to the metal on the surface of the third zone, a second conductive bus in ohmic contact with the second zone of semiconductor material at an opening in the coating and connected to the metal on the surface of the fourth zone, a third conductive bus connected to the metal on the surfaces of the first and second zones, and a fourth conductive bus in ohmic contact with the third zone of semiconductor material at an opening in the coating and in ohmic contact with the fourth zone of semiconductor material at an opening in the coating.