Abstract 1. A METHOD FOR PRODUCING HIGH AND LOW THRESHOLD SCHOTTKY DIODES IN AN INTEGRATED CIRCUIT, COMPRISING DIFFUSING A PLURALITY OF N-CONDUCTING ZONES HIGHLY DOPED WITH ONE OF THE GROUP INCLUDING ARSENIC OR ANTIMONY INTO A P-CONDUCTIVE SEMICONDUCTOR SUBSTRATE, DIFFUSING A PHOSPHOROUS DOPED REGION INTO ONE OF THE ZONES, EPITAXIALLY PRECIPITATING A N-CONDUCTING SEMICONDUCTOR LAYER OVER THE SURFACE OF THE SUBSTRATE INTO WHICH THE N-CONDUCTING ZONES HAVE BEEN DIFFUSED, DIFFUSING THE PHOSPHOROUS DOPED REGION INTO THE LAYER UP TO THE SURFACE OF THE LAYER AND ARRANGING A METAL CONTACT ON THE SURFACE OF THE LAYER IN CONTACT WITH THE PHOSPHOROUS DOPANT IN THE LAYER DIFFUSING THROUGH THE LAYER A SECOND PHOSPHOROUS DOPED REGION DOWN TO SAID ONE ZONE AND A THIRD PHOSPHOROUS DOPED REGION DOWN TO A SECOND OF THE ZONES, DIFFUSING RESPECTIVE HIGHLY DOPED N-CONDUCTIVE REGIONS INTO EACH OF THE SECOND AND THIRD PHOSPHOROUS DOPED REGIONS, ARRANGING RESPECTIVE METAL CONTACTS ON THE LAYER IN CONTACT WITH EACH OF THE N-CONDUCTIVE REGIONS AND ARRANGING A METAL CONTACT ON THE LAYER ABOVE THE SECOND ZONE, THE LAYER AND THE METAL CONTACTS ARRANGED THEREABOVE FORMING HIGH AND LOW THRESHOLD SCHOTTKY DIODES AND THE METAL CONTACTS IN CONTACT WITH THE N-CONDUCTIVE REGIONS FORMING THE OTHER ELECTRICAL CONNECTIONS OF THE RESPECTIVE SCHOTTKY DIODES.
A METHOD FOR PRODUCING HIGH AND LOW THRESHOLD SCHOTTKY DIODES IN AN INTEGRATED CIRCUIT, COMPRISING DIFFUSING A PLURALITY OF N-CONDUCTING ZONES HIGHLY DOPED WITH ONE OF THE GROUP INCLUDING ARSENIC OR ANTIMONY INTO A P-CONDUCTIVE SEMICONDUCTOR SUBSTRATE, DIFFUSING A PHOSPHOROUS DOPED REGION INTO ONE OF THE ZONES, EPITAXIALLY PRECIPITATING A N-CONDUCTING SEMICONDUCTOR LAYER OVER THE SURFACE OF THE SUBSTRATE INTO WHICH THE N-CONDUCTING ZONES HAVE BEEN DIFFUSED, DIFFUSING THE PHOSPHOROUS DOPED REGION INTO THE LAYER UP TO THE SURFACE OF THE LAYER AND ARRANGING A METAL CONTACT ON THE SURFACE OF THE LAYER IN CONTACT WITH THE PHOSPHOROUS DOPANT IN THE LAYER DIFFUSING THROUGH THE LAYER A SECOND PHOSPHOROUS DOPED REGION DOWN TO SAID ONE ZONE AND A THIRD PHOSPHOROUS DOPED REGION DOWN TO A SECOND OF THE ZONES, DIFFUSING RESPECTIVE HIGHLY
Claim 2
Independent Claim
132 words
A METHOD FOR PRODUCING HIGH AND LOW THRESHOLD SCHOTTKY DIODES IN AN INTEGRATED CIRCUIT, COMPRISING DIFFUSING A PLURALITY OF N-CONDUCTING ZONES HIGHLY DOPED WITH ONE OF THE GROUP INCLUDING ARSENIC OR ANTIMONY INTO A P-CONDUCTIVE SEMICONDUCTOR SUBSTRATE, DIFFUSING A PHOSPHOROUS DOPED REGION INTO ONE OF THE ZONES, EPITAXIALLY PRECIPITATING A N-CONDUCTING SEMICONDUCTOR LAYER OVER THE SURFACE OF THE SUBSTRATE INTO WHICH THE N-CONDUCTING ZONES HAVE BEEN DIFFUSED, DIFFUSING THE PHOSPHOROUS DOPED REGION INTO THE LAYER UP TO THE SURFACE OF THE LAYER AND ARRANGING A METAL CONTACT ON THE SURFACE OF THE LAYER IN CONTACT WITH THE PHOSPHOROUS DOPANT IN THE LAYER DIFFUSING THROUGH THE LAYER A SECOND PHOSPHOROUS DOPED REGION DOWN TO SAID ONE ZONE AND A THIRD PHOSPHOROUS DOPED REGION DOWN TO A SECOND OF THE ZONES, DIFFUSING RESPECTIVE HIGHLY