US4619840A — Process and apparatus for low pressure chemical v…

Claim 1

Independent Claim 143 words

A process for low pressure chemical vapor deposition of a refractory metal thin film on a semiconductor substrate comprising the steps of: placing a semiconductor substrate in a deposition chamber; evacuating said deposition chamber; heating said semiconductor substrate to a temperature exceeding that at which a refractory metal carbonyl compound dissociates; heating said refractory metal carbonyl compond sufficiently to convert a portion of it to a refractory metal carbonyl vapor; continuously flowing said refractory metal carbonyl vapor into contact with the heated semiconductor substrate at subatmospheric pressure for a time sufficiently long to deposit a layer of a refractory metal from said refractory metal carbonyl vapor by means of exhausting said deposition chamber with a vacuum pumping means to maintain a substantially constant amount of said refractory metal carbonyl vapor within said deposition chamber; and removing said semiconductor substrate from said deposition chamber.

Claim 2

Dependent Claim 143 words

A process for low pressure chemical vapor deposition of a refractory metal thin film on a semiconductor substrate comprising the steps of: placing a semiconductor substrate in a deposition chamber; evacuating said deposition chamber; heating said semiconductor substrate to a temperature exceeding that at which a refractory metal carbonyl compound dissociates; heating said refractory metal carbonyl compond sufficiently to convert a portion of it to a refractory metal carbonyl vapor; continuously flowing said refractory metal carbonyl vapor into contact with the heated semiconductor substrate at subatmospheric pressure for a time sufficiently long to deposit a layer of a refractory metal from said refractory metal carbonyl vapor by means of exhausting said deposition chamber with a vacuum pumping means to maintain a substantially constant amount of said refractory metal carbonyl vapor within said deposition chamber; and removing said semiconductor substrate from said deposition chamber.

Claim 3

Dependent Claim 43 words

A process for low pressure chemical vapor deposition of a refractory metal thin film on a semiconductor substrate as defined in claim 1 including the step of cooling in an inert atmosphere said semiconductor substrate on which said refractory metal has been deposited.

Claim 4

Dependent Claim 38 words

A process for low pressure chemical vapor deposition of a refractory metal thin film on a semiconductor substrate as defined in claim 1 wherein said deposition chamber is evacuated to a pressure of not more than 800 millitorr.

Claim 5

Dependent Claim 45 words

A process for low pressure chemical vapor deposition of a refractory metal thin film on a semiconductor substrate as defined in claim 1 wherein said refractory metal carbonyl compound is heated to a temperature of at least 25° C. and not greater than 150° C.

Claim 6

Dependent Claim 38 words

A process for low pressure chemical vapor deposition of a refractory metal thin film on a semiconductor substrate as defined in claim 1 wherein the semiconductor substrate is heated to a temperature between 350° C. and 450° C.

Claim 7

Dependent Claim 37 words

A process for low pressure chemical vapor deposition of a refractory metal thin film on a semiconductor substrate as defined in claim 1 wherein the deposition chamber is maintained at a temperature of less than 300° C.

Claim 8

Dependent Claim 147 words

A process for low pressure chemical vapor deposition of a tungsten thin film on a silicon wafer comprising the steps of: placing a silicon wafer in a deposition chamber; evacuating the deposition chamber to a pressure of not more than 800 millitorr; heating a quantity of tungsten carbonyl to a temperature of at least 25° C. and not greater than 150° C. to convert a portion of it to a tungsten carbonyl vapor; heating said silicon wafer to a temperature between 350° C. and 450° C.; maintaining said deposition chamber at a temperature of less than 300° C.; introducing said tungsten carbonyl vapor into said deposition chamber to contact said heated silicon wafer with said tungsten carbonyl vapor to deposit a tungsten metal film thereon; allowing said silicon wafer to cool before exposing it to an oxidizing atmosphere; and removing said silicon wafer from said deposition chamber.

Claim 9

Dependent Claim 147 words

A process for low pressure chemical vapor deposition of a tungsten thin film on a silicon wafer comprising the steps of: placing a silicon wafer in a deposition chamber; evacuating the deposition chamber to a pressure of not more than 800 millitorr; heating a quantity of tungsten carbonyl to a temperature of at least 25° C. and not greater than 150° C. to convert a portion of it to a tungsten carbonyl vapor; heating said silicon wafer to a temperature between 350° C. and 450° C.; maintaining said deposition chamber at a temperature of less than 300° C.; introducing said tungsten carbonyl vapor into said deposition chamber to contact said heated silicon wafer with said tungsten carbonyl vapor to deposit a tungsten metal film thereon; allowing said silicon wafer to cool before exposing it to an oxidizing atmosphere; and removing said silicon wafer from said deposition chamber.

Claim 10

Dependent Claim 48 words

A process for low pressure chemical vapor deposition of a tungsten thin film on a silicon wafer as defined in claim 7 wherein said silicon wafer is supported on a heated carrier, said heated carrier heating said silicon wafer to said temperature between 350° C. and 450° C.

Claim 11

Dependent Claim 107 words

A process for low pressure chemical vapor deposition of a tungsten thin film on a silicon wafer as defined in claim 7 including the steps of: evacuating the deposition chamber with a vacuum pumping means via an exhaust flow path; introducing an inert gas into said exhaust flow path between vacuum pumping means and said deposition chamber at a measurable and controllable flow rate; adjusting said flow rate so that a predetermined subatmospheric pressure is established in the deposition chamber; and introducing heated tungsten carbonyl vapor into said deposition chamber so that a constant partial pressure of said tungsten carbonyl vapor is present in said deposition chamber.

Claim 12

Dependent Claim 48 words

A process for low pressure chemical vapor deposition of a tungsten thin film on a silicon wafer as defined in claim 9 wherein the pressure of said inert gas in said deposition chamber prior to the introduction of said tungsten carbonyl vapor is not more than 550 millitorr.

Claim 13

Dependent Claim 35 words

A process for low pressure chemical vapor deposition of a tungsten thin film on a silicon wafer as defined in claim 7 wherein said tungsten carbonyl is heated to a temperature of about 90° C.

Claim 14

Dependent Claim 37 words

A process for low pressure chemical vapor deposition of a tungsten thin film on a silicon wafer as defined in claim 7 wherein said silicon wafer is heated to a temperature between 375° C. and 450° C.

Claim 15

Dependent Claim 35 words

A process for low pressure chemical vapor deposition of a tungsten thin film on a silicon wafer as defined in claim 7 wherein said silicon wafer is heated to a temperature of approximately 400° C.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1989-10-27	1990-04-28	1990-10-28	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1993-10-27	1994-04-28	1994-10-28	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1997-10-27	1998-04-28	1998-10-28	$7700.00	Window Closed / Lapsed

Process and apparatus for low pressure chemical vapor deposition of refractory metal

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