Method of vapor depositing a tungsten-tungsten oxide coating
Abstract
Abstract A TUNGSTEN-TUNGSTEN OXIDE ELECTRICAL RESISTANCE FILM IS DEPOSITED BY PASSING A GASEOUS MIXTURE CONTAINING OXYGEN AND TUNGSTEN HEXACARBONYL VAPOR IN CONTACT WITH A SUITABLE SUBSTRATE MAINTAINED AT A TEMPERATURE SUFFICIENTLY HIGH TO DECOMPOSE THE CARBONYL VAPOR. THE SHEET RESISTANCE OF THE DEPOSITED FILM CAN BE VARIED FROM 50 OHMS PER SQUARE TO 5,000 OHMS PER SQUARE BY CONTROLLING THE MOLAR RATIO OF OXYGEN TO TUNGSTEN HEXACARBONYL, THEREBY DETERMINING THE RATIO OF TUNGSTEN TO TENGSTEN OXIDE IN THE CERMET FILM. THE FILM IS PARTICULARLY SUITED FOR USE AS A RESISTOR IN THE FABRICATION OF INTEGRATED CIRCUITS, AND IS COMPATABLE WITH DIFFUSED ACTIVE COMPONENTS NOF SEMICONDUCTOR DEVICES.
Inventors
- 👤 L Warren
Bibliographic Details
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