Method for forming fine multilayer resist patterns

Claim 1

A method for forming fine resist patterns comprising the sequential steps of: (1) forming a lower layer on a substrate by plasma-polymerizing at least one member selected from the group consisting of the following monomers (e) to (i): (e) ethylene, propylene, butene, butadiene and isoprene: (f) vinyl chloride, vinylidene chloride, chloroprene, vinylidene fluoride, tetrafluoroethylene, trichloroethylene and tetrachloroethylene; (g) styrene, chlorostyrene, α-methylstyrene, chloromethylstyrene, brominated styrene and iodinated styrene; (h) methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, phenyl methacrylate, methyl acrylate, vinyl acetate, methyl vinyl ketone, methyl isopropyl ketone, phenyl isopropyl ketone, phenols, ester compounds, ether compounds and epoxy compounds; and (i) amides, imides, acrylonitrile and methacrylonitrile; (2) forming an upper layer on the above lower layer by plasma-polymerizing the following mixture (k): (k) a mixture of at least one organosilicon compound with at least one monomer selected from said monomers (e) to (i), said upper layer and said lower layer forming a multilayer film, which multilayer film can be developed, to form a pattern, by a plasma after patternwise exposure of the multilayer film to light or radiation; (3) patternwise exposing the multilayer film to irradiation by a light or a radiation; (4) exposing the upper layer, after said patternwise exposing, to plasma development in an atmosphere of gas mixture of a fluorinated hydrocarbon and a gas selected from the group consisting of Ar, He, Ne, Xe, O 2 and N 2 in a partial pressure ratio of 1:(5 to 100); and then (5) exposing the lower layer, after development of the upper layer, to plasma development in an atmosphere of O 2 or a gas mixture of O 2 and a gas selected from the group consisting of Ar, He, Ne, Xe and N 2 in a partial pressure ratio of 1:(1 to 10).

Claim 2

A method for forming fine resist patterns comprising the sequential steps of: (1) forming a lower layer on a substrate by plasma-polymerizing at least one member selected from the group consisting of the following monomers (e) to (i): (e) ethylene, propylene, butene, butadiene and isoprene: (f) vinyl chloride, vinylidene chloride, chloroprene, vinylidene fluoride, tetrafluoroethylene, trichloroethylene and tetrachloroethylene; (g) styrene, chlorostyrene, α-methylstyrene, chloromethylstyrene, brominated styrene and iodinated styrene; (h) methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, phenyl methacrylate, methyl acrylate, vinyl acetate, methyl vinyl ketone, methyl isopropyl ketone, phenyl isopropyl ketone, phenols, ester compounds, ether compounds and epoxy compounds; and (i) amides, imides, acrylonitrile and methacrylonitrile; (2) forming an upper layer on the above lower layer by plasma-polymerizing the following mixture (k): (k) a mixture of at least one organosilicon compound with at least one monomer selected from said monomers (e) to (i), said upper layer and said lower layer forming a multilayer film, which multilayer film can be developed, to form a pattern, by a plasma after patternwise exposure of the multilayer film to light or radiation; (3) patternwise exposing the multilayer film to irradiation by a light or a radiation; (4) exposing the upper layer, after said patternwise exposing, to plasma development in an atmosphere of gas mixture of a fluorinated hydrocarbon and a gas selected from the group consisting of Ar, He, Ne, Xe, O 2 and N 2 in a partial pressure ratio of 1:(5 to 100); and then (5) exposing the lower layer, after development of the upper layer, to plasma development in an atmosphere of O 2 or a gas mixture of O 2 and a gas selected from the group consisting of Ar, He, Ne, Xe and N 2 in a partial pressure ratio of 1:(1 to 10).

Claim 14

A method for forming fine resist patterns comprising the sequential steps of: (1) forming a lower layer on a substrate by plasma polymirizing at least one member selected from the group consisting of the following monomers (e) to (i): (e) plasma-polymerizable hydrocarbons; (f) plasma-polymerizable halogenated hydrocarbons; (g) styrene and styrene derivatives; (h) plasma-polymerizable oxygen-containing compounds; and (i) plasma-polymerizable nitrogen-containing compounds; (2) forming an upper layer on the above lower layer by plasma-polymerizing the following mixture (k): (k) a mixture of at least one organosilicon compound with at least one monomer selected from the monomers (e) to (i), said upper and lower layers forming a multilayer film, which multilayer film can be developed, to form a pattern, by plasma after patternwise exposure of the multilayer film to light or radiation; (3) patternwise exposing the multilayer film to irradiation by a light or a radiation; (4) exposing the upper layer, after said patternwise exposing, to plasma development in an atmosphere of a gas mixture of a fluorinated hydrocarbon and a gas selected from the group consisting of Ar, He, Ne, Xe, O 2 and N 2 in a partial pressure ratio of 1: (5 to 100); and then (5) exposing the lower layer, after development of the upper layer, to plasma development in an atmosphere of O 2 or a gas mixture of O 2 and a gas selected from the group consisting of Ar, He, Ne, Xe, and N 2 in a partial pressure ratio of 1: (1 to 10).

Claim 15

A method for forming fine resist patterns comprising the sequential steps of: (1) forming a lower layer on a substrate by plasma polymirizing at least one member selected from the group consisting of the following monomers (e) to (i): (e) plasma-polymerizable hydrocarbons; (f) plasma-polymerizable halogenated hydrocarbons; (g) styrene and styrene derivatives; (h) plasma-polymerizable oxygen-containing compounds; and (i) plasma-polymerizable nitrogen-containing compounds; (2) forming an upper layer on the above lower layer by plasma-polymerizing the following mixture (k): (k) a mixture of at least one organosilicon compound with at least one monomer selected from the monomers (e) to (i), said upper and lower layers forming a multilayer film, which multilayer film can be developed, to form a pattern, by plasma after patternwise exposure of the multilayer film to light or radiation; (3) patternwise exposing the multilayer film to irradiation by a light or a radiation; (4) exposing the upper layer, after said patternwise exposing, to plasma development in an atmosphere of a gas mixture of a fluorinated hydrocarbon and a gas selected from the group consisting of Ar, He, Ne, Xe, O 2 and N 2 in a partial pressure ratio of 1: (5 to 100); and then (5) exposing the lower layer, after development of the upper layer, to plasma development in an atmosphere of O 2 or a gas mixture of O 2 and a gas selected from the group consisting of Ar, He, Ne, Xe, and N 2 in a partial pressure ratio of 1: (1 to 10).