Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
192 words
A source voltage buildup detecting circuit which detects, after a source voltage is switched on, whether the source voltage is higher than a predetermined voltage and outputs a detecting signal accordingly, said source voltage buildup detecting circuit comprising: a complementary metal-oxide semiconductor (CMOS) inverter having a threshold voltage and an input terminal and providing an output signal; a level shifting element comprising one of a MOS transistor and a diode, operatively connected between the source voltage and said CMOS inverter; and a voltage generating circuit, operatively connected to the input terminal of said CMOS inverter, said level shifting element supplying a voltage lower than the source voltage to said CMOS inverter as a working voltage, when the source voltage becomes lower than the predetermined voltage after the source voltage is switched on, said voltage generating circuit outputs a voltage higher than the threshold voltage of said CMOS inverter, when the source voltage becomes higher than the predetermined voltage, said voltage generating circuit outputs a voltage lower than the threshold voltage of said CMOS inverter, and when the source voltage reaches the predetermined value, the output signal of said CMOS inverter is inverted.
Claim 2
Dependent Claim
192 words
A source voltage buildup detecting circuit which detects, after a source voltage is switched on, whether the source voltage is higher than a predetermined voltage and outputs a detecting signal accordingly, said source voltage buildup detecting circuit comprising: a complementary metal-oxide semiconductor (CMOS) inverter having a threshold voltage and an input terminal and providing an output signal; a level shifting element comprising one of a MOS transistor and a diode, operatively connected between the source voltage and said CMOS inverter; and a voltage generating circuit, operatively connected to the input terminal of said CMOS inverter, said level shifting element supplying a voltage lower than the source voltage to said CMOS inverter as a working voltage, when the source voltage becomes lower than the predetermined voltage after the source voltage is switched on, said voltage generating circuit outputs a voltage higher than the threshold voltage of said CMOS inverter, when the source voltage becomes higher than the predetermined voltage, said voltage generating circuit outputs a voltage lower than the threshold voltage of said CMOS inverter, and when the source voltage reaches the predetermined value, the output signal of said CMOS inverter is inverted.
Claim 3
Dependent Claim
22 words
A source voltage buildup detecting circuit according to claim 1, wherein said diode of said level shifting element comprises a Schottky diode.
Claim 4
Dependent Claim
103 words
A source voltage buildup detecting circuit according to claim 1, wherein said voltage generating circuit comprises: a capacitor having a first end operatively connected to the source voltage and having a second end; a resistive element having a first end operatively connected to the second end of said capacitor and having a second end; and a first transistor having a gate and a drain both operatively connected to the second end of said resistive element and a source operatively connected to ground, the connection point between said capacitor and said resistive element being operatively connected to the input terminal of said CMOS inverter.
Claim 5
Dependent Claim
17 words
A source voltage buildup detecting circuit according to claim 3, wherein said resistive element comprises a resistor.
Claim 6
Dependent Claim
90 words
A source voltage buildup detecting circuit according to claim 3, wherein said resistive element comprises: a second transistor having a first terminal operatively connected to the drain of said first transistor, a second terminal operatively connected to the second end of said capacitor and a gate operatively connected to ground; and a third transistor having a first terminal operatively connected to the first terminal of said second transistor, a second terminal operatively connected to the second terminal of said second transistor, and a gate operatively connected to the source voltage.
Claim 7
Dependent Claim
28 words
A source voltage buildup detecting circuit according to claim 5, wherein said second transistor comprises an P-channel MOS transistor and said third transistor comprises a N-channel MOS transistor.