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US4558233A Expired / Lapsed US ⏱️ 0.0 years remaining

CMOS power-on reset pulse generating circuit with extended reset pulse duration

Assignee: Fujitsu Ltd
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Filing: 1983-02-16
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Granted: 1985-12-10
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Expires: 2003-02-16
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Abstract

Abstract A source voltage buildup detecting circuit which detects, after the source is switched on, whether the source voltage is higher than a predetermined voltage and outputs a detecting signal. The source voltage buildup detecting circuit includes a complementary metal-oxide semiconductor (CMOS) inverter, a level shifting element connected between the power source and the CMOS inverter, and a voltage generating circuit connected to an input of the CMOS inverter. The level shifting element supplies a voltage lower than the source voltage to the CMOS inverter as a working voltage, and when the source voltage becomes greater than the predetermined voltage after the source voltage is switched on, the voltage generating circuit outputs a voltage higher than the threshold voltage of the CMOS inverter. When the source voltage becomes higher than the predetermined voltage, the voltage generating circuit outputs a voltage lower than the threshold voltage of the CMOS inverter.

Inventors

  • 👤 Tutomu Nakamori

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 14:06
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/22; H03K17/223; G; G01; G01R; G01R19/00; G01R19/165; G01R19/16504; G01R19/16519; G06; G06F; G06F1/00; G06F1/24

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 192 words
A source voltage buildup detecting circuit which detects, after a source voltage is switched on, whether the source voltage is higher than a predetermined voltage and outputs a detecting signal accordingly, said source voltage buildup detecting circuit comprising: a complementary metal-oxide semiconductor (CMOS) inverter having a threshold voltage and an input terminal and providing an output signal; a level shifting element comprising one of a MOS transistor and a diode, operatively connected between the source voltage and said CMOS inverter; and a voltage generating circuit, operatively connected to the input terminal of said CMOS inverter, said level shifting element supplying a voltage lower than the source voltage to said CMOS inverter as a working voltage, when the source voltage becomes lower than the predetermined voltage after the source voltage is switched on, said voltage generating circuit outputs a voltage higher than the threshold voltage of said CMOS inverter, when the source voltage becomes higher than the predetermined voltage, said voltage generating circuit outputs a voltage lower than the threshold voltage of said CMOS inverter, and when the source voltage reaches the predetermined value, the output signal of said CMOS inverter is inverted.
Claim 2
Dependent Claim 192 words
A source voltage buildup detecting circuit which detects, after a source voltage is switched on, whether the source voltage is higher than a predetermined voltage and outputs a detecting signal accordingly, said source voltage buildup detecting circuit comprising: a complementary metal-oxide semiconductor (CMOS) inverter having a threshold voltage and an input terminal and providing an output signal; a level shifting element comprising one of a MOS transistor and a diode, operatively connected between the source voltage and said CMOS inverter; and a voltage generating circuit, operatively connected to the input terminal of said CMOS inverter, said level shifting element supplying a voltage lower than the source voltage to said CMOS inverter as a working voltage, when the source voltage becomes lower than the predetermined voltage after the source voltage is switched on, said voltage generating circuit outputs a voltage higher than the threshold voltage of said CMOS inverter, when the source voltage becomes higher than the predetermined voltage, said voltage generating circuit outputs a voltage lower than the threshold voltage of said CMOS inverter, and when the source voltage reaches the predetermined value, the output signal of said CMOS inverter is inverted.
Claim 3
Dependent Claim 22 words
A source voltage buildup detecting circuit according to claim 1, wherein said diode of said level shifting element comprises a Schottky diode.
Claim 4
Dependent Claim 103 words
A source voltage buildup detecting circuit according to claim 1, wherein said voltage generating circuit comprises: a capacitor having a first end operatively connected to the source voltage and having a second end; a resistive element having a first end operatively connected to the second end of said capacitor and having a second end; and a first transistor having a gate and a drain both operatively connected to the second end of said resistive element and a source operatively connected to ground, the connection point between said capacitor and said resistive element being operatively connected to the input terminal of said CMOS inverter.
Claim 5
Dependent Claim 17 words
A source voltage buildup detecting circuit according to claim 3, wherein said resistive element comprises a resistor.
Claim 6
Dependent Claim 90 words
A source voltage buildup detecting circuit according to claim 3, wherein said resistive element comprises: a second transistor having a first terminal operatively connected to the drain of said first transistor, a second terminal operatively connected to the second end of said capacitor and a gate operatively connected to ground; and a third transistor having a first terminal operatively connected to the first terminal of said second transistor, a second terminal operatively connected to the second terminal of said second transistor, and a gate operatively connected to the source voltage.
Claim 7
Dependent Claim 28 words
A source voltage buildup detecting circuit according to claim 5, wherein said second transistor comprises an P-channel MOS transistor and said third transistor comprises a N-channel MOS transistor.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1988-12-09 1989-06-10 1989-12-10 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1992-12-09 1993-06-10 1993-12-10 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1996-12-09 1997-06-10 1997-12-10 $7700.00 Window Closed / Lapsed

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