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US4514895A
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Method of forming field-effect transistors using selectively beam-crystallized polysilicon channel regions
Assignee: Mitsubishi Electric Corp
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Filing: 1984-03-06
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Granted: 1985-05-07
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Expires: 2004-03-06
Abstract
Abstract A method of manufacturing MOS field-effect transistors using a wafer (40) having a polycrystal or amorphous semiconductor layer formed on an insulator comprises a step in which an energy beam (44) is applied to the semiconductor layer by scanning the beam intermittently and correlatively to the wafer so as to heat locally the semiconductor layer whereby only a plurality of portions (41) contained in the semiconductor layer and assigned for forming channel regions of MOS field-effect transistors are monocrystallized or the crystalline grains in the above described positions are made large. According to the present invention, a strain occurring in a recrystallized semiconductor can be mitigated by the selective heating.
Inventors
- 👤 Tadashi Nishimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:38
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/32; H10P14/3202; H10P14/3238; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6744; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3818; H10P14/382; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
99 words
A method of manufacturing MOS field effect transistor using a wafer having a polycrystal or amorphous semiconductor layer formed on an insulator, comprising the steps of: depositing a polysilicon layer on a silicon substrate; depositing on said polysilicon layer at least two non-reflective stripes forming a channel therebetween; scanning said polysilicon layer and said non-reflective stripes with an energy beam having a diameter and intensity adequate to melt said polysilicon only in regions beneath and between non-reflective stripes and controlling said beam to be intermittent to impinge only preselected regions of said polysilicon layer assigned to be channel regions.
Claim 2
Independent Claim
99 words
A method of manufacturing MOS field effect transistor using a wafer having a polycrystal or amorphous semiconductor layer formed on an insulator, comprising the steps of: depositing a polysilicon layer on a silicon substrate; depositing on said polysilicon layer at least two non-reflective stripes forming a channel therebetween; scanning said polysilicon layer and said non-reflective stripes with an energy beam having a diameter and intensity adequate to melt said polysilicon only in regions beneath and between non-reflective stripes and controlling said beam to be intermittent to impinge only preselected regions of said polysilicon layer assigned to be channel regions.
Claim 3
Dependent Claim
54 words
A method in accordance with claim 1, wherein said scanning step includes scanning said preselected regions of polysilicon beneath and between non-reflective stripes to generate a temperature distribution thereat whose maximum value at all points exceeds the melting point of said polysilicon and in which the highest temperatures are attained beneath said non-reflective stripes.
Claim 4
Dependent Claim
29 words
A method in accordance with claim 2, wherein each of said channel regions comprises a channel and a junction region structured by said channel, a source and a drain.
Claim 5
Dependent Claim
33 words
A method in accordance with claim 2, wherein said scanning step includes storing position and scanning length data in the memory of a computer and applying signals therefrom to control a beam source.
Claim 6
Dependent Claim
20 words
A method in accordance with claim 2, wherein said scanning step includes forming a prepatterned film on said semiconductor layer.
Claim 7
Dependent Claim
15 words
A method in accordance with claim 2, wherein said energy beam is a laser beam.
Claim 8
Dependent Claim
15 words
A method in accordance with claim 2, wherein said energy beam is an electron beam.
Claim 9
Dependent Claim
16 words
A method in accordance with claim 2, wherein said energy beam is a converged light beam.
Claim 10
Dependent Claim
16 words
A method in accordance with claim 2, wherein said insulator is formed on a semiconductor substrate.
Claim 11
Dependent Claim
24 words
A method in accordance with claim 3, wherein said scanning step includes scanning in a direction substantially orthogonal with the direction of said channel.
Claim 12
Dependent Claim
15 words
A method in accordance with claim 5, wherein said film is a silicon nitride film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-05-06 | 1988-11-05 | 1989-05-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-05-06 | 1992-11-05 | 1993-05-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-05-06 | 1996-11-05 | 1997-05-07 | $7700.00 | Window Closed / Lapsed |