EP0071471A2
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EP
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Method of forming a single-crystal semiconductor film on an amorphous insulator
Assignee: Fujitsu Ltd
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Filing: 1982-07-28
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Granted: —
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Expires: 2002-07-28
Abstract
Abstract A large single-crystalline film (13) is formed on an amorphous insulator by high energy beam annealing. The crystal growth of a molten polycrystalline or amorphous film (11) on the insulator is controlled to occur from the central region towards the outside of the molten zone (12) produced by scanning the beam. This control is accomplished by using, for example, a doughnut-shaped laser beam, which may be scanned a plurality of times (X,Y) to produce a wider film.
Inventors
- 👤 Seiichiro Kawamura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 14:43
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10T; Y10T117/00; Y10T117/10; Y10T117/1024; Y10T117/1076; Y10T117/108; Y10T117/1088
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
79 words
A method of forming a single-crystalline semiconductor film on an amorphous insulator by scanning a high energy beam over a polycrystalline or amorphous semiconductor film on the amorphous insulator, characterised in that the beam (1,10,15,16,X,Y) is so scanned that crystal growth of a single-crystalline semiconductor (13) occurs in the polycrystalline or amorphous film (11) from a central region towards the outside of an area exposed to the high energy beam, whereby a continuous single-crystalline semiconductor film (13) is formed.
Claim 2
Independent Claim
79 words
A method of forming a single-crystalline semiconductor film on an amorphous insulator by scanning a high energy beam over a polycrystalline or amorphous semiconductor film on the amorphous insulator, characterised in that the beam (1,10,15,16,X,Y) is so scanned that crystal growth of a single-crystalline semiconductor (13) occurs in the polycrystalline or amorphous film (11) from a central region towards the outside of an area exposed to the high energy beam, whereby a continuous single-crystalline semiconductor film (13) is formed.
Claim 3
Dependent Claim
20 words
A method as claimed in Claim 1, characterised in that the high energy beam is a doughnut-shaped laser beam (I,X,Y).
Claim 4
Dependent Claim
30 words
A method as claimed in Claim 2, characterised in that the front half of the doughnut-shaped laser beam (1) in the scanning direction is used as the high energy beam.
Claim 5
Dependent Claim
28 words
A method as claimed in Claim 1, characterised in that the high energy beam being scanned has an 8-shape (10) formed by moving an-electron or ion beam spot.
Claim 6
Dependent Claim
19 words
A method as claimed in Claim 1, characterised in that the high energy beam is a hook-shaped beam (15).
Claim 7
Dependent Claim
18 words
A method as claimed in Claim 1, characterised in that a plurality of high energy beams is used.
Claim 8
Dependent Claim
53 words
A method as claimed in Claim 6, characterised in that the high energy beam comprises three spot beams (16A,16B,16C) one of the spot beams (16A) being prepositioned in the beam-scanning zone, and two of the spot beams (16B,16C) being placed symmetrically at the rear and at respective sides of the prepositioned spot beam.
Claim 9
Independent Claim
94 words
A method as claimed in any preceding claim, characterised in that the high energy beam is scanned more than once (X,Y) while shifting the scan-line laterally, the distance of the shift being selected so as to fulfil the formula: where d denotes the shifting distance of the scan-line from the preceding line; W 1 denotes the width of the single-crystal region which is formed by a single beam; and W 2 denotes the width of the polycrystalline region which is formed on each side of the central single-crystal region (13) by a single scan.
Claim 10
Dependent Claim
31 words
A method as claimed in Claim 1, characterised in that the amorphous insulator (18) is thinner in the central region than in the outer region of the high energy beam-scanning zone.
Claim 11
Dependent Claim
35 words
A method as claimed in Claim 1, characterised in that the said polycrystalline or amorphous semiconductor film (19) is covered by a nonreflective film (20) in the peripheral region of the high energy beam-scanning zone.
References Cited (Backward Citations)
No citation records indexed.
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