US4381202A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Selective epitaxy by beam energy and devices thereon
Assignee: Fujitsu Ltd
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Filing: 1981-03-25
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Granted: 1983-04-26
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Expires: 2001-03-25
Abstract
Abstract A semiconductor device in which an insulating layer having a window is formed on a semiconductor substrate, a semiconductor layer is formed on the insulating layer and a semiconductor element is formed on the semiconductor layer, has the advantages of high-speed operation and low power consumption. A conventional manufacturing method involves a high-temperature, time-consuming step by which the semiconductor layer for forming thereon the semiconductor element is formed so that it may have a proper impurity concentration. In the present invention, however, a portion of the semiconductor layer and a portion of the underlying substrate are rendered molten by annealing with an energy beam as of a laser, by which an impurity contained in the substrate is diffused into the semiconductor layer. Accordingly, no high-temperature, time-consuming step is involved in the present invention, permitting the production of a semiconductor device of excellent characteristics.
Inventors
- 👤 Haruhisa Mori
- 👤 Tsutomu Ogawa
- 👤 Takashi Matsumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 19:56
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10D; H10D62/00; H10D62/10; H10D62/113; H10D62/115; H10D62/116; H10D62/40; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; H10P95/00; H10P95/90; Y; Y10; Y10S; Y10S148/00; Y10S148/046; Y10S148/09; Y10S148/091
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
159 words
A method for the manufacture of a semiconductor device comprising the steps of: forming an insulating film on the surface of a semiconductor substrate having a predetermined conductivity type, the insulating film being selectively removed to form therein a window at a predetermined position; forming a semiconductor layer on the insulating film and the semiconductor substrate exposed through the window; melting the portion of the semiconductor layer corresponding to the window and the portion of the semiconductor substrate corresponding to the window by irradiation with an energy beam to a predetermined depth, by which an impurity in the semiconductor substrate is diffused into the semiconductor layer to impart thereto a predetermined conductivity type of relatively low impurity concentration and, at the same time, make monocrystalline at least that portion of the semiconductor layer corresponding to the window; and in the substrate is diffused into the semiconductor layer portion and the molten semiconductor layer portion is rendered to single crystalline.
Claim 2
Independent Claim
159 words
A method for the manufacture of a semiconductor device comprising the steps of: forming an insulating film on the surface of a semiconductor substrate having a predetermined conductivity type, the insulating film being selectively removed to form therein a window at a predetermined position; forming a semiconductor layer on the insulating film and the semiconductor substrate exposed through the window; melting the portion of the semiconductor layer corresponding to the window and the portion of the semiconductor substrate corresponding to the window by irradiation with an energy beam to a predetermined depth, by which an impurity in the semiconductor substrate is diffused into the semiconductor layer to impart thereto a predetermined conductivity type of relatively low impurity concentration and, at the same time, make monocrystalline at least that portion of the semiconductor layer corresponding to the window; and in the substrate is diffused into the semiconductor layer portion and the molten semiconductor layer portion is rendered to single crystalline.
Claim 3
Dependent Claim
18 words
A semiconductor device manufacturing method according to claim 1 wherein the semiconductor layer is a silicon semiconductor layer.
Claim 4
Dependent Claim
28 words
A semiconductor device manufacturing method according to claim 1 wherein the impurity concentration of the semiconductor layer portion is controlled by selecting the melt depth of the substrate.
Claim 5
Dependent Claim
29 words
A semiconductor device manufacturing method according to claim 1 wherein an impurity is introduced beforehand into the portion of the substrate corresponding to the window of the insulating layer.
Claim 6
Dependent Claim
27 words
A semiconductor device manufacturing method according to claim 1 wherein the energy beam is a selected from a photon beam, an electron beam and an ion beam.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-04-25 | 1986-10-25 | 1987-04-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-04-25 | 1990-10-25 | 1991-04-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-04-25 | 1994-10-25 | 1995-04-26 | $7700.00 | Window Closed / Lapsed |