Patent US4489480A successfully refreshed from Google Patents.
US4489480A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing field effect transistors of GaAs by ion implantation
Assignee: US Philips Corp
•
Filing: 1983-03-30
•
Granted: 1984-12-25
•
Expires: 2003-03-30
Abstract
Abstract The invention relates to a method of manufacturing field effect transistors of gallium arsenide obtained by ion implantation of light donors, such as silicon or selenium, in a semi-insulating substrate of gallium arsenide. In order to reduce out-diffusion of the deep level (EL 2 ) responsible for parasitic phenomena in the operation of the transistors, the method is characterized in that in addition oxygen ions are implanted in at least the region of the substrate intended to form the channel region of the field effect transistor. After implantation, the substrate is sintered at a temperature between 600° and 900° C. in either an enveloping substance or uncovered, and/or in an atmosphere of arsine.
Inventors
- 👤 Gerard M. Martin
- 👤 Sherif Makram-Ebeid
- 👤 Camille Venger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:42
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/206; H10D; H10D30/00; H10D30/80; H10D30/87; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D62/80; H10D62/85; H10D62/854; H10P30/208; H10P30/218; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/919
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
59 words
A method of manufacturing a field effect transistor comprising the steps of providing a semi-insulating substrate of gallium arsenide, forming a layer of n-type gallium arsenide on said substrate by implanting donor ions into said substrate, and implanting oxygen ions at least in a region of said substrate where a channel region of said field effect transistor is formed.
Claim 2
Independent Claim
59 words
A method of manufacturing a field effect transistor comprising the steps of providing a semi-insulating substrate of gallium arsenide, forming a layer of n-type gallium arsenide on said substrate by implanting donor ions into said substrate, and implanting oxygen ions at least in a region of said substrate where a channel region of said field effect transistor is formed.
Claim 3
Dependent Claim
29 words
A method according to claim 1, wherein said donor ions are selenium ions, and wherein said oxygen ions are implanted to approximately the same depth as said selenium ions.
Claim 4
Dependent Claim
48 words
A method as claimed in claim 1, wherein said donor ions are silicon ions implanted at several energies, said silicon ions being distributed to a depth of 1000 nm, and wherein said oxygen ions are implanted at a high energy to a depth between 400 and 800 nm.
Claim 5
Dependent Claim
32 words
A method according to claim 1, wherein after said ion implantations said substrate is subjected to a thermal treatment at a temperature between approximately 600° C. and 900° C. for 15 minutes.
Claim 6
Dependent Claim
32 words
A method according to claim 2, wherein after said ion implantations said substrate is subjected to a thermal treatment at a temperature between approximately 600° C. and 900° C. for 15 minutes.
Claim 7
Dependent Claim
18 words
A method according to claim 5, wherein during said thermal treatment said substrate is enveloped in silicon nitride.
Claim 8
Dependent Claim
26 words
A method according to claim 5, wherein said thermal treatment is effected in an atmosphere of arsine (AsH 3 ), and wherein said substrate is uncovered.
Claim 9
Dependent Claim
32 words
A method according to claim 3, wherein after said ion implantations said substrate is subjected to a thermal treatment at a temperature between approximately 600° C. and 900° C. for 15 minutes.
Claim 10
Dependent Claim
18 words
A method according to claim 8, wherein during said thermal treatment said substrate is enveloped in silicon nitride.
Claim 11
Dependent Claim
26 words
A method according to claim 8, wherein said thermal treatment is effected in an atmosphere of arsine (AsH 3 ), and wherein said substrate is uncovered,
Claim 12
Dependent Claim
18 words
A method according to claim 4, wherein during said thermal treatment said substrate is enveloped in silicon nitride.
Claim 13
Dependent Claim
26 words
A method according to claim 4, wherein said thermal treatment is effected in an atmosphere of arsine (AsH 3 ), and wherein said substrate is uncovered.
References Cited (Backward Citations)
US4033788A
Cited
US4366493A
Cited
US4357180A
Cited
US4389768A
Cited
US4396437A
Cited
US4385938A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-12-25 | 1988-06-25 | 1988-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-12-25 | 1992-06-25 | 1992-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-12-25 | 1996-06-25 | 1996-12-25 | $7700.00 | Window Closed / Lapsed |