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US4447746A Expired / Lapsed US ⏱️ 0.0 years remaining

Digital photodetectors

Assignee: International Business Machines Corp
•
Filing: 1981-12-31
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Granted: 1984-05-08
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Expires: 2001-12-31
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Abstract

Abstract A digital photodetector circuit having a photosensing stage connected to a depletion mode field effect transistor forming an inverter stage, increased sensitivity is achieved by then coupling the output of the photo inverter to a second photo inverter whose photosensitive element serves as the active load of an enhancement mode field effect transistor in the inverter stage. The circuit is readily fabricated in integrated structures. The circuit performance may be adjusted for responsiveness to light sensitivity and to provide selectable electrical output signal level and impedance matching including bistable performance.

Inventors

  • 👤 Frank F. Fang
  • 👤 James C. McGroddy

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 03:23
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/103; H03; H03K; H03K17/00; H03K17/51; H03K17/78; H03K17/785

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 166 words
In a circuit of the type wherein a digital electrical signal is delivered in response to a change in light intensity, the improvement comprising a first and a second stage connected between a reference potential and a power source potential, said first stage including a photosensitive member connected in series with a load between said reference potential and said power source potential providing across said photosensitive member in the presence of light a difference in potential with respect to said reference potential, said second stage including an enhancement mode field effect transistor having the source electrode thereof connected to said reference potential and the drain thereof connected in series with a load to said power source potential, means applying said difference of potential across said photosensitive member to the gate electrode of said enhancement mode field effect transistor in said second stage, and output signal means delivering an output signal appearing at the drain electrode of said enhancement mode field effect transistor in said second stage.
Claim 2
Dependent Claim 166 words
In a circuit of the type wherein a digital electrical signal is delivered in response to a change in light intensity, the improvement comprising a first and a second stage connected between a reference potential and a power source potential, said first stage including a photosensitive member connected in series with a load between said reference potential and said power source potential providing across said photosensitive member in the presence of light a difference in potential with respect to said reference potential, said second stage including an enhancement mode field effect transistor having the source electrode thereof connected to said reference potential and the drain thereof connected in series with a load to said power source potential, means applying said difference of potential across said photosensitive member to the gate electrode of said enhancement mode field effect transistor in said second stage, and output signal means delivering an output signal appearing at the drain electrode of said enhancement mode field effect transistor in said second stage.
Claim 3
Dependent Claim 17 words
The circuit of claim 1 wherein the load in said second stage is a second photosensitive member.
Claim 4
Dependent Claim 19 words
The circuit of claim 1 wherein the load in said first stage is a depletion mode field effect transistor.
Claim 5
Dependent Claim 19 words
The circuit of claim 1 wherein the load in said second stage is a depletion mode field effect transistor.
Claim 6
Dependent Claim 23 words
The circuit of claim 1 wherein the load in each said first and said second stage is a depletion mode field effect transistor.
Claim 7
Dependent Claim 23 words
The circuit of claim 2 wherein the load in each said first and said second stage is a depletion mode field effect transistor.
Claim 8
Dependent Claim 12 words
The circuit of claim 1 wherein said photosensitive member is a photoconductor.
Claim 9
Dependent Claim 12 words
The circuit of claim 1 wherein said photosensitive member is a phototransistor.
Claim 10
Dependent Claim 13 words
The circuit of claim 1 wherein said photosensitive member is a PIN diode.
Claim 11
Dependent Claim 12 words
The circuit of claim 2 wherein said photosensitive member is a photoconductor.
Claim 12
Dependent Claim 12 words
The circuit of claim 2 wherein said photosensitive member is a phototransistor.
Claim 13
Dependent Claim 13 words
The circuit of claim 2 wherein said photosensitive member is a PIN diode.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-05-08 1987-11-07 1988-05-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-05-08 1991-11-07 1992-05-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-05-08 1995-11-07 1996-05-08 $7700.00 Window Closed / Lapsed

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