US4045817A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor optical image sensing device
Assignee: Panasonic Holdings Corp
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Filing: 1976-02-12
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Granted: 1977-08-30
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Expires: 1996-02-12
Abstract
Abstract A semiconductor optical image sensing device having a signal line connected to the drain electrodes of MOS field effect transistors each corresponding to a picture element, wherein the source electrodes of the MOS field effect transistors are connected to photo-diodes, capacitors of MOS structures are connected between the gate electrodes of the MOS field effect transistors and a noise line, and the signal line and the noise line are connected to input terminals of a differential amplifier. The capacitors of MOS structures are formed in the same way as the gates and drains of the MOS field effect transistors. By applying a scanning pulse to the gate electrodes of the MOS field effect transistors to scan the MOS field effect transistors for switching the same, a signal output and a noise output are produced from the signal line while another noise output is produced from the noise line. The signal to noise ratio can be enhanced by producing only the signal output from the differential amplifier.
Inventors
- 👤 Hirokuni Nakatani
- 👤 Toru Takamura
- 👤 Susumu Hashimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 15:16
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H04; H04N; H04N25/00; H04N25/60; H04N25/62
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
209 words
A semiconductor optical image sensing device comprising: a power supply; first and second load means; a differential amplifier; first and second output lines connected to said differential amplifier and to one terminal of said power supply through said first and second load means, respectively; a plurality of MOS capacitors each having a current conducting electrode and a control electrode, each current conducting electrode of said MOS capacitors being connected to said second output line; a plurality of photo-sensing devices, the number of photo-sensing diodes being at least equal to the number of MOS capacitors; and a plurality of MOS field effect transistors each having first and second current conducting electrodes and a control electrode, the number of MOS field effect transistors being at least equal to the number of MOS capacitors, said first current conducting electrode of each of said MOS field effect transistors being connected to said first output line, said second current conducting electrode of each of said MOS field effect transistors being connected to the other terminal of said power supply through a corresponding one of said photo-sensing devices respectively and the control electrode of each of said MOS field effect transistors being connected to the control electrode of the corresponding one of said MOS capacitors.
Claim 2
Dependent Claim
209 words
A semiconductor optical image sensing device comprising: a power supply; first and second load means; a differential amplifier; first and second output lines connected to said differential amplifier and to one terminal of said power supply through said first and second load means, respectively; a plurality of MOS capacitors each having a current conducting electrode and a control electrode, each current conducting electrode of said MOS capacitors being connected to said second output line; a plurality of photo-sensing devices, the number of photo-sensing diodes being at least equal to the number of MOS capacitors; and a plurality of MOS field effect transistors each having first and second current conducting electrodes and a control electrode, the number of MOS field effect transistors being at least equal to the number of MOS capacitors, said first current conducting electrode of each of said MOS field effect transistors being connected to said first output line, said second current conducting electrode of each of said MOS field effect transistors being connected to the other terminal of said power supply through a corresponding one of said photo-sensing devices respectively and the control electrode of each of said MOS field effect transistors being connected to the control electrode of the corresponding one of said MOS capacitors.
Claim 3
Dependent Claim
30 words
A semiconductor optical image sensing device according to claim 1 wherein respective ones of said MOS field effect transistors, said photo-sensing devices and said MOS capacitors constitute a picture element.
Claim 4
Dependent Claim
21 words
A semiconductor optical image sensing device according to claim 1 wherein a scanning pulse generator is connected to said control electrodes.
Claim 5
Dependent Claim
16 words
A semiconductor optical image sensing device according to claim 1 wherein said photo-sensing devices are photo-diodes.
Claim 6
Dependent Claim
28 words
A semiconductor optical image sensing device according to claim 1 wherein said first current conducting electrodes are drain electrodes and said second current conducting electrodes are source electrodes.
Claim 7
Dependent Claim
32 words
A semiconductor optical image sensing device according to claim 1 wherein said MOS field effect transistors, said photo-sensing devices and said MOS capacitors are formed in one and the same semiconductor substrate.
Claim 8
Dependent Claim
26 words
A semiconductor optical image sensing device according to claim 1 wherein said photo-sensing devices are formed in the source regions of said MOS field effect transistors.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-08-29 | 1981-02-28 | 1981-08-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-08-29 | 1985-02-28 | 1985-08-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-08-29 | 1989-02-28 | 1989-08-30 | $7700.00 | Window Closed / Lapsed |