High-breakdown-voltage resistance element for integrated circuit with a plurality of multilayer, overlapping electrodes

Claim 2

A high-breakdown-voltage resistance element comprising a semiconductor body, an impurity layer disposed in a surface region of said semiconductor body to provide a resistor body, and n first layer electrodes (n: a positive integer) connected to said resistor body through corresponding contact holes in a first insulating film formed on the surface of said semiconductor body, said n first layer electrodes being arranged in such a relation that the 1st electrode of said n first layer electrodes is connected to one end of said resistor body, the 2nd to (n-1)th electrodes of said n first layer electrodes are connected to intermediate portions of said resistor body, and the n-th electrode of said n first layer electrodes is connected to the other end of said resistor body, said n electrodes of said n first layer electrodes being separated from one another by predetermined spaces along said first insulating film so that said n electrodes do not contact one another and so that a plurality of regions of said resistor body are left uncovered by said n first layer electrodes, said resistance element further comprising a second insulating film formed on said 1st to n-th electrodes of said n first layer electrodes, and m second layer electrodes (m: a positive integer smaller than n) comprising (n+1)th electrodes deposited on said second insulating film and connected to selected ones respectively of said 1st to (n-1)th electrodes among said n first layer electrodes, said m second layer electrodes covering said plurality of regions of said resistor body which are uncovered by said n electrodes of said first layer electrodes so that said 1st to (n+m)th electrodes cover a surface region including the entire surface of said resistor body and areas of said semiconductor body adjacent thereto.

Claim 3

A high-breakdown-voltage resistance element as claimed in claim 1, wherein said second layer electrodes comprise (n+1)th to (2n-1)th electrodes totaling (n-1), said (n+1)th to (2n-1)th electrodes being connected to said 1st to (n-1)th electrodes respectively through corresponding contact holes in said second insulating film, and said 1st to (2n-1)th electrodes cover the surface region including the entire surface of said resistor body and areas adjacent thereto.

Claim 4

A high-breakdown-voltage resistance element as claimed in claim 2, wherein said 1st electrode covers a portion of the surface region including one end portion of said resistor body and an area adjacent thereto and extends toward and terminates close to said 2nd electrode to cover also a portion of the surface region of said resistor body and an area adjacent thereto, said 2nd to (n-1)th electrodes extend toward and terminate close to said 3rd to nth electrodes respectively to cover portions of the surface region including 2nd to (n-1)th regions of said resistor body and areas adjacent thereto, said n-th electrode covers a portion of the surface region including the other end portion of said resistor body and an area adjacent thereto, and said (n+1)th to (2n-1)th electrodes cover portions of the surface region including (n+1)th to (2n-1)th regions of said resistor body which are not metalized and remain between said 1st and 2nd electrodes, . . . , and between said (n-1)th and n-th electrodes respectively.

Claim 5

A high-breakdown-voltage resistance element as claimed in claim 1 or 2, wherein said 1st electrode provides the high-potential terminal of said resistor body, and said n-th electrode provides the low-potential terminal of said resistor body.

Claim 6

A high-breakdown-voltage resistance element as claimed in claim 1, wherein said second insulating film extends through said predetermined spaces between said n first layer electrodes to contact said first insulating film, and wherein said m second layer electrodes extend along said second insulating film to cover said predetermined spaces.

Claim 7

A high-breakdown-voltage resistance element as claimed in claim 1, wherein said second layer electrodes comprise (n+1)th to (2n-1)th electrodes totaling (n-1) where m=n=1, said (n+1)th to (2n-1)th electrodes being connected to said 1st to (n-1)th electrodes respectively through corresponding contact holes in said second insulating film, and said 1st to (2n-1)th electrodes cover the surface region including the entire surface of said resistor body and areas adjacent thereto.

Claim 8

A high-breakdown-voltage resistance element as claimed in claim 2, wherein said 1st electrode covers a portion of the surface region including one end portion of said resistor body and an area adjacent thereto and extends toward and terminates close to said 2nd electrode to cover also a portion of the surface region of said resistor body and an area adjacent thereto, said 2nd to (n-1)th electrodes extend toward and terminate close to said 3rd to n-th electrodes respectively to cover portions of the surface region including 2nd to (n-1)th regions of said resistor body and areas adjacent thereto, said n-th electrode covers a portion of the surface region including the other end portion of said resistor body and an area adjacent thereto, and said (n+1)th to (2n-1)th electrodes cover portions of the surface region including (n+1)th to (2n-1)th regions of said resistor body which are not metalized and remain between said 1st and 2nd electrodes, . . . , and between said (n-1)th and n-th electrodes respectively.

Claim 9

A high-breakdown-voltage resistance element comprising a semiconductor body, an impurity layer disposed in a surface region of said semiconductor body and isolated by a PN-junction from an adjacent semiconductor region, said impurity layer having a higher impurity concentration than that of the adjacent semiconductor region and a substantially uniform thickness to provide a resistor body, and n first layer electrodes (n: a positive integer) connected to said resistor body through corresponding contact holes in a first insulating film formed on the surface of said semiconductor body, said n first layer electrodes being arranged in such a relation that the 1st electrode of said n first layer electrodes is connected to one end of said resistor body, the 2nd to (n-1)th electrodes of said n first layer electrodes are connected to intermediate portions of said resistor body along its length, and the n-th electrode of said n first layer electrodes is connected to the other end of said resistor body, said n first layer electrodes being on a common plane with one another above a surface of said resistor body with said n electrodes of said n first layer electrodes being separated from one another so that said n electrodes do not contact one another and so that a plurality of regions of said resistor body are left uncovered by said n first layer electrodes, said resistance element comprising a second insulating film formed on said 1st to n-th electrodes of said n first layer electrodes, and m second layer electrodes (m: a positive integer smaller than n) comprising (n+1)th to (n+m)th electrodes deposited on said second insulating film and connected to selected ones respectively of said 1st to (n-1)th electrodes among said n first layer electrodes, said m second layer electrodes covering said plurality of regions of said resistor body which are uncovered by said n electrodes of said first layer electrodes so that said 1st to (n+m)th electrodes covering a surface region including the entire surface of said resistor body and areas adjacent thereto.

Claim 10

A high-breakdown-voltage resistance element comprising a semiconductor body, an impurity layer disposed in a surface region of said semiconductor body and isolated by a PN-junction from an adjacent semiconductor region, said impurity layer having a higher impurity concentration than that of the adjacent semiconductor region and a substantially uniform thickness to provide a resistor body, and n first layer electrodes (n: a positive integer) connected to said resistor body through corresponding contact holes in a first insulating film formed on the surface of said semiconductor body, said n first layer electrodes being arranged in such a relation that the 1st electrode of said n first layer electrodes is connected to one end of said resistor body, the 2nd to (n-1)th electrodes of said n first layer electrodes are connected to intermediate portions of said resistor body along its length, and the n-th electrode of said n first layer electrodes is connected to the other end of said resistor body, said n first layer electrodes being on a common plane with one another above a surface of said resistor body with said n electrodes of said n first layer electrodes being separated from one another so that said n electrodes do not contact one another and so that a plurality of regions of said resistor body are left uncovered by said n first layer electrodes, said resistance element comprising a second insulating film formed on said 1st to n-th electrodes of said n first layer electrodes, and m second layer electrodes (m: a positive integer smaller than n) comprising (n+1)th to (n+m)th electrodes deposited on said second insulating film and connected to selected ones respectively of said 1st to (n-1)th electrodes among said n first layer electrodes, said m second layer electrodes covering said plurality of regions of said resistor body which are uncovered by said n electrodes of said first layer electrodes so that said 1st to (n+m)th electrodes covering a surface region including the entire surface of said resistor body and areas adjacent thereto.

Claim 11

A high-breakdown-voltage resistance element as claimed in claim 1 or 8, wherein the electrode among said second layer electrodes lying on the p-th electrode in the first layer electrodes (p: a positive integer, 1≦p≦n) is connected to a selected one of the 1st to (p-1)th electrodes among said first layer electrodes.

Claim 12

A high-breakdown-voltage resistance element as claimed in claim 8 or 6, wherein said 1st electrode provides a high-potential terminal of said resistor body, and said n-th electrode provides a low-potential terminal of said resistor body.

Claim 13

A high-breakdown-voltage resistance element as claimed in claim 8, wherein said second insulating film extends through said predetermined spaces between said n first layer electrodes to contact said first insulating film, and wherein said m second layer electrodes extend along said second insulating film to cover said predetermined spaces.