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US4382837A
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Epitaxial crystal fabrication of SiC:AlN
Assignee: International Business Machines Corp
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Filing: 1981-06-30
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Granted: 1983-05-10
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Expires: 2001-06-30
Abstract
Abstract Crystals of silicon carbide and aluminum nitride, substrates containing same, and the fabrication thereof.
Inventors
- 👤 Richard F. Rutz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:37
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C04; C04B; C04B35/00; C04B35/515; C04B35/58; C04B35/581; C30B29/00; C30B29/10; C30B29/38; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
80 words
A process for growing a crystal of (SiC) x (AlN) 1-x wherein x is about 0.2 to about 0.5, which comprises: providing an Al 2 O 3 substrate; providing a first source for SiC and a second source for AlN in proximity to said substrate; heating said first and second sources to the range of about 1900° to about 2020° C. in the presence of N 2 +H 2 gas flowing over said sources in the direction towards said substrate.
Claim 2
Dependent Claim
80 words
A process for growing a crystal of (SiC) x (AlN) 1-x wherein x is about 0.2 to about 0.5, which comprises: providing an Al 2 O 3 substrate; providing a first source for SiC and a second source for AlN in proximity to said substrate; heating said first and second sources to the range of about 1900° to about 2020° C. in the presence of N 2 +H 2 gas flowing over said sources in the direction towards said substrate.
Claim 3
Dependent Claim
12 words
The process of claim 1 wherein said source for SiC is SiC.
Claim 4
Dependent Claim
12 words
The process of claim 1 wherein said source for AlN is AlN.
Claim 5
Dependent Claim
15 words
The process of claim 1 wherein said source for SiC is SiO 2 and C.
Claim 6
Dependent Claim
18 words
The process of claim 1 wherein said source for AlN is Al 2 O 3 +C+N 2 .
Claim 7
Dependent Claim
22 words
The process of claim 1 wherein the temperature of the substrate is about 10° to about 100° C. cooler than said sources.
Claim 8
Dependent Claim
25 words
The process of claim 1 wherein the N 2 and H 2 gas contains about 85% N 2 and about 15% H 2 by volume.
Claim 9
Dependent Claim
19 words
The process of claim 1 wherein said sources are spaced about 0.1 to about 5 millimeters from said substrate.
Claim 10
Dependent Claim
16 words
The process of claim 1 wherein the substrate is <0001> oriented Al 2 O 3 .
Claim 11
Dependent Claim
13 words
The process of claim 1 wherein X is about 0.3 to about 0.5.
Claim 12
Dependent Claim
10 words
The process of claim 1 wherein X is about 0.5.
Claim 13
Dependent Claim
16 words
The process of claim 1 wherein said crystal is about 1 to about 10 microns thick.
Claim 14
Dependent Claim
12 words
The process of claim 1 wherein said crystal is 2H crystalline form.
Claim 15
Dependent Claim
12 words
The process of claim 1 wherein said crystal is a C-axis crystal.
Claim 16
Dependent Claim
16 words
The process of claim 14 wherein the C-axis lattice is about 5.0152 to about 5.0038 A.
Claim 17
Dependent Claim
19 words
The process of claim 1 wherein the absorption edge of said crystals is about 4.3 to about 4.8 eV.
References Cited (Backward Citations)
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US3634149A
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US4013503A
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US4147572A
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US4172754A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-05-09 | 1986-11-08 | 1987-05-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-05-09 | 1990-11-08 | 1991-05-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-05-09 | 1994-11-08 | 1995-05-10 | $7700.00 | Window Closed / Lapsed |