Patent US4344222A successfully refreshed from Google Patents.
US4344222A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bipolar compatible electrically alterable read-only memory
Assignee: International Business Machines Corp
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Filing: 1980-10-22
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Granted: 1982-08-17
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Expires: 2000-10-22
Abstract
Abstract A bipolar compatible electrically alterable read-only memory device and process are disclosed based upon the formation of an aluminum gate structure on the surface of a thin oxide layer in an FET precursor device, wherein the aluminum gate structure serves both as an ion-implantation blocking mask for forming self-aligned source and drain regions and, in addition, a source of aluminum for the solid state reaction between the silicon dioxide layer and aluminum, forming an aluminum oxide/silicon dioxide composite charge storage region. The process is wholly compatible with existing bipolar processing technologies so that high speed bipolar support circuitry can be utilized on the same semiconductor chip with the programmable device disclosed. The programmable device disclosed has the unique advantages of having a programming voltage which can be tailored to substantially match the signal voltages on the rest of the chip by controlling the solid state reaction for the aluminum oxide formation step. Lower programming voltages permit more closely spaced device structures and the reduction in the number of power supplies for the resulting chip. Additional process and structural embodiments are disclosed.
Inventors
- 👤 David L. Bergeron
- 👤 Paul H. Smith
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 20:06
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0413; H10D30/60; H10D30/69; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; H10P30/00; H10P30/20; H10P30/22
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
190 words
A process for forming an electrically alterable charge storage node on a semiconductor substrate of a first conductivity type, having a silicon dioxide insulating layer on the surface of the substrate, comprising the steps of: depositing a first layer of metal on the surface of said silicon dioxide layer, having a thickness which, in combination with the thickness of the silicon dioxide layer, will serve to mask a subsequent ion-implantation step; ion implanting a conductivity enhancing impurity of a second conductivity type through said silicon dioxide layer adjacent to said metal layer, to form an ion-implanted region having a terminal portion aligned with the edge of said metal; sintering said metal layer to initiate a solid state reaction between said metal and said silicon dioxide layer, forming a metal oxide charge storage region in said silicon dioxide layer which is substantially aligned with said terminal portion of said ion-implanted region and said metal layer; stripping said metal layer; and depositing a second metal layer over said metal oxide charge storage region, as a programming gate for said electrically alterable storage node; whereby an electrically alterable charge storage node is formed.
Claim 2
Dependent Claim
190 words
A process for forming an electrically alterable charge storage node on a semiconductor substrate of a first conductivity type, having a silicon dioxide insulating layer on the surface of the substrate, comprising the steps of: depositing a first layer of metal on the surface of said silicon dioxide layer, having a thickness which, in combination with the thickness of the silicon dioxide layer, will serve to mask a subsequent ion-implantation step; ion implanting a conductivity enhancing impurity of a second conductivity type through said silicon dioxide layer adjacent to said metal layer, to form an ion-implanted region having a terminal portion aligned with the edge of said metal; sintering said metal layer to initiate a solid state reaction between said metal and said silicon dioxide layer, forming a metal oxide charge storage region in said silicon dioxide layer which is substantially aligned with said terminal portion of said ion-implanted region and said metal layer; stripping said metal layer; and depositing a second metal layer over said metal oxide charge storage region, as a programming gate for said electrically alterable storage node; whereby an electrically alterable charge storage node is formed.
Claim 3
Dependent Claim
70 words
The process of claim 1, which further comprises: forming a second ion-implanted region simultaneously with the formation of said first ion-implanted region on the side of said metal layer opposite from said first ion-implanted region, having a terminal edge aligned with said opposite side of said metal layer; whereby said first and second ion-implanted regions serve as the source and drain regions of an electrically programmable field effect transistor device.
Claim 4
Dependent Claim
18 words
The process of claim 2, wherein said metal is selected from the group consisting of beryllium and titanium.
Claim 5
Dependent Claim
18 words
The process of claim 2, wherein said metal is selected from the group consisting of aluminum and magnesium.
Claim 6
Dependent Claim
45 words
The process of claim 2, which further comprises: after said sintering step, the step of stripping said metal layer; annealing said ion-implanted layer; and depositing a second metal layer over said metal oxide layer, as a programming gate for said electrically programmable field effect transistor.
Claim 7
Dependent Claim
188 words
A process for forming an electrically alterable charge storage node on a semiconductor substrate of a first conductivity type, having a silicon dioxide insulating layer on the surface of the substrate, comprising the steps of: depositing a layer of aluminum on the surface of said silicon dioxide layer, having a thickness which, in combination with the thickness of the silicon dioxide layer, will serve to mask a subsequent ion-implantation step; ion implanting a conductivity enhancing impurity of a second conductivity type through said silicon dioxide layer adjacent to said aluminum layer, to form an ion-implanted region having a terminal portion aligned with the edge of said aluminum; sintering said aluminum layer to initiate a solid state reaction between said aluminum and said silicon dioxide layer, forming a metal oxide charge storage region in said silicon dioxide layer which is substantially aligned with said terminal portion of said ion-implanted region and said aluminum layer; stripping said aluminum layer; and depositing a second metal over said metal oxide charge storage region, as a programming gate for said electrically alterable storage node; whereby an electrically alterable charge storage node is formed.
Claim 8
Dependent Claim
188 words
A process for forming an electrically alterable charge storage node on a semiconductor substrate of a first conductivity type, having a silicon dioxide insulating layer on the surface of the substrate, comprising the steps of: depositing a layer of aluminum on the surface of said silicon dioxide layer, having a thickness which, in combination with the thickness of the silicon dioxide layer, will serve to mask a subsequent ion-implantation step; ion implanting a conductivity enhancing impurity of a second conductivity type through said silicon dioxide layer adjacent to said aluminum layer, to form an ion-implanted region having a terminal portion aligned with the edge of said aluminum; sintering said aluminum layer to initiate a solid state reaction between said aluminum and said silicon dioxide layer, forming a metal oxide charge storage region in said silicon dioxide layer which is substantially aligned with said terminal portion of said ion-implanted region and said aluminum layer; stripping said aluminum layer; and depositing a second metal over said metal oxide charge storage region, as a programming gate for said electrically alterable storage node; whereby an electrically alterable charge storage node is formed.
Claim 9
Dependent Claim
228 words
A process for forming an electrically programmable field effect transistor device on a semiconductor substrate of a first conductivity type, having a silicon dioxide insulating layer on the surface of the substrate, comprising the steps of: depositing a layer of aluminum on the surface of said silicon dioxide layer, having a thickness which, in combination with the thickness of the silicon dioxide layer, will serve to mask a subsequent ion-implantation step; ion implanting a conductivity enhancing impurity of a second conductivity type through said silicon dioxide layer adjacent to said aluminum layer, to form an ion-implanted source region having a terminal portion aligned with a first edge of said aluminum layer and an ion-implanted drain region having a terminal portion aligned with a second edge of said aluminum layer opposite from said first edge; sintering said aluminum layer to initiate a solid state reaction between said aluminum and said silicon dioxide layer, forming a metal oxide charge storage region in said silicon dioxide layer which is substantially aligned with said terminal portions of said ion-implanted source and drain regions and said first and second edges, respectively, of said aluminum layer; stripping said aluminum layer; and depositing a second metal layer over said metal oxide charge storage region, as a programming gate for said electrically programmable field effect transistor; whereby an electrically programmable field effect transistor device is formed.
Claim 10
Dependent Claim
228 words
A process for forming an electrically programmable field effect transistor device on a semiconductor substrate of a first conductivity type, having a silicon dioxide insulating layer on the surface of the substrate, comprising the steps of: depositing a layer of aluminum on the surface of said silicon dioxide layer, having a thickness which, in combination with the thickness of the silicon dioxide layer, will serve to mask a subsequent ion-implantation step; ion implanting a conductivity enhancing impurity of a second conductivity type through said silicon dioxide layer adjacent to said aluminum layer, to form an ion-implanted source region having a terminal portion aligned with a first edge of said aluminum layer and an ion-implanted drain region having a terminal portion aligned with a second edge of said aluminum layer opposite from said first edge; sintering said aluminum layer to initiate a solid state reaction between said aluminum and said silicon dioxide layer, forming a metal oxide charge storage region in said silicon dioxide layer which is substantially aligned with said terminal portions of said ion-implanted source and drain regions and said first and second edges, respectively, of said aluminum layer; stripping said aluminum layer; and depositing a second metal layer over said metal oxide charge storage region, as a programming gate for said electrically programmable field effect transistor; whereby an electrically programmable field effect transistor device is formed.
Claim 11
Dependent Claim
223 words
A process for forming an electrically programmable field effect transistor device on a semiconductor substrate of a first conductivity type, having a silicon dioxide insulating layer on the surface of the substrate, comprising the steps of: depositing a layer of a refractory metal selected from the group consisting of titanium and beryllium, on the surface of said silicon dioxide layer, said metal layer being patterned to have first and second opposed edges, and having a thickness which, in combination with the thickness of the silicon dioxide layer, will serve to mask a subsequent ion-implantation step; sintering said refractory metal layer to initiate a solid state reaction between said refractory metal and said silicon dioxide layer, forming a metal oxide charge storage region in said silicon dioxide layer which is substantially aligned with said first and second edges of said refractory metal layer; and ion implanting a conductivity enhancing impurity of a second conductivity type through said silicon dioxide layer adjacent to said refractory metal layer, to form an ion-implanted source region having a terminal portion aligned with said first edge of said refractory metal layer and an ion-implanted drain region having a terminal portion aligned with said second edge of said refractory metal layer; said refractory metal layer serving as a programming gate for the electrically programmable field effect transistor device thereby formed.
Claim 12
Dependent Claim
223 words
A process for forming an electrically programmable field effect transistor device on a semiconductor substrate of a first conductivity type, having a silicon dioxide insulating layer on the surface of the substrate, comprising the steps of: depositing a layer of a refractory metal selected from the group consisting of titanium and beryllium, on the surface of said silicon dioxide layer, said metal layer being patterned to have first and second opposed edges, and having a thickness which, in combination with the thickness of the silicon dioxide layer, will serve to mask a subsequent ion-implantation step; sintering said refractory metal layer to initiate a solid state reaction between said refractory metal and said silicon dioxide layer, forming a metal oxide charge storage region in said silicon dioxide layer which is substantially aligned with said first and second edges of said refractory metal layer; and ion implanting a conductivity enhancing impurity of a second conductivity type through said silicon dioxide layer adjacent to said refractory metal layer, to form an ion-implanted source region having a terminal portion aligned with said first edge of said refractory metal layer and an ion-implanted drain region having a terminal portion aligned with said second edge of said refractory metal layer; said refractory metal layer serving as a programming gate for the electrically programmable field effect transistor device thereby formed.
Claim 13
Dependent Claim
154 words
A process for forming an electrically programmable field effect transistor device on a semiconductor substrate of a first conductivity type, having a silicon dioxide insulating layer on the surface of the substrate and a source and drain region of a second conductivity type separated by a channel region in said substrate, comprising the steps of: depositing a layer of metal selected from the group consisting of aluminum, magnesium, beryllium, and titanium, on the surface of said silicon dioxide layer, said metal layer being patterned to have first and second opposed edges; sintering said metal layer to initiate a solid state reaction between said metal and said silicon dioxide layer, and forming a metal oxide charge storage region in said silicon dioxide layer which is substantially aligned with said first and second edges of said metal layer; said metal layer serving as a programming gate for the electrically programmable field effect transistor device thereby formed.
Claim 14
Dependent Claim
154 words
A process for forming an electrically programmable field effect transistor device on a semiconductor substrate of a first conductivity type, having a silicon dioxide insulating layer on the surface of the substrate and a source and drain region of a second conductivity type separated by a channel region in said substrate, comprising the steps of: depositing a layer of metal selected from the group consisting of aluminum, magnesium, beryllium, and titanium, on the surface of said silicon dioxide layer, said metal layer being patterned to have first and second opposed edges; sintering said metal layer to initiate a solid state reaction between said metal and said silicon dioxide layer, and forming a metal oxide charge storage region in said silicon dioxide layer which is substantially aligned with said first and second edges of said metal layer; said metal layer serving as a programming gate for the electrically programmable field effect transistor device thereby formed.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-08-16 | 1986-02-15 | 1986-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-08-16 | 1990-02-15 | 1990-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-08-16 | 1994-02-15 | 1994-08-17 | $7700.00 | Window Closed / Lapsed |