US3767463A
Expired / Lapsed
US
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Method for controlling semiconductor surface potential
Assignee: International Business Machines Corp
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Filing: 1971-02-10
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Granted: 1973-10-23
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Expires: 1991-02-10
Abstract
Abstract A method for controlling semiconductor surface potential in which metal oxides such as silicon dioxide and aluminum oxide are deposited as a mixture or sequentially on the surface of a semiconductor such as silicon or germanium at temperatures below which diffusion of constituents of the oxides normally does not occur. The deposition of the metal oxides is carried out in an nonoxidizing atmosphere such as nitrogen or forming gas. Changing the mixture of metal oxides in the nonoxidizing gas environment changes the effective surface charge on a semiconductor. The sequential deposition of a silicon dioxide layer and an aluminum oxide layer in nitrogen with a subsequent heating step to form a mixture of metal oxides also produces changes in the effective surface charge depending on the amount of mixture formed.
Inventors
- 👤 J Aboaf
- 👤 T Sedgwick
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 03:42
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10D; H10D99/00; Y; Y10; Y10S; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
69 words
A method for controlling semiconductor surface potential comprising the steps of: forming a layer of silicon oxide in a non-oxidizing atmosphere on the surface of a semiconductor substrate said semiconductor being one selected from the group consisting of germanium and silicon, and depositing a layer of aluminum oxide in a non-oxidizing atmosphere on said silicon oxide layer at a temperature below which the constituents of said layers normally diffuse.
Claim 2
Independent Claim
53 words
A method for controlling semiconductor surface potential comprising the steps of: forming a layer of silicon oxide on a surface of a silicon semiconductor substrate, and depositing a layer of aluminum oxide in a non-oxidizing atmosphere on said silicon oxide layer at a temperature below which the constituents of said layers normally diffuse.
Claim 3
Independent Claim
65 words
A method for controlling semiconductor surface potential comprising the steps of: forming a layer of silicon oxide on the surface of a semiconductor substrate said semiconductor being one selected from the group consisting of germanium and silicon; and, depositing a layer of aluminum oxide on said silicon oxide layer in a nonoxidizing atmosphere at a temperature below which the constituents of said layers normally diffuse.
Claim 4
Dependent Claim
18 words
A method according to claim 1 wherein said layer of silicon oxide is a layer of silicon dioxide.
Claim 5
Dependent Claim
33 words
A method according to claim 1 further including the step of heating said layers and said semiconductor substrate for times and at temperatures sufficient to cause interdiffusion of a portion of said layers.
Claim 6
Independent Claim
78 words
A method for controlling semiconductor surface potential comprising the step of: depositing first and second layers of different metal oxides selected from the group consisting of Silicon oxide, aluminum oxide and boron oxide in sequence on a surface of a substrate of semiconductor material selected from the group consisting of germanium and silicon in a non-oxidizing atmosphere and at a temperature below which the constituents of said metal oxides normally diffuse said aluminum oxide being the second layer.
Claim 7
Dependent Claim
34 words
A method according to claim 4 further including the step of heating said layers at a temperature and for a time sufficient to cause interdiffusion of a portion of said first and second layers.
Claim 8
Dependent Claim
16 words
A method according to claim 7 wherein said non-oxidizing atmosphere includes reducing gases and inert gases.
Claim 9
Dependent Claim
18 words
A method according to claim 9 wherein said inert gases include nitrogen, helium, argon, xenon, neon and krypton.
Claim 10
Dependent Claim
15 words
A method according to claim 9 wherein said reducing gases include hydrogen and forming gas.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-10-22 | 1977-04-23 | 1977-10-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-22 | 1981-04-23 | 1981-10-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-22 | 1985-04-23 | 1985-10-23 | $7700.00 | Window Closed / Lapsed |